AO4922 Asymmetric Dual N-Channel MOSFET SRFET General Description Product Summary The AO4922 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. FET1 VDS (V) = 30V ID = 9A RDS(ON) < 15.8mΩ RDS(ON) < 18.5mΩ TM FET2 VDS(V) = 30V ID=7.3A (VGS = 10V) <24mΩ (VGS = 10V) <29mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Bottom View Top View S1 G1 S2 G2 1 2 3 4 D1 D1 D2 D2 8 7 6 5 G2 G1 S2 S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max FET1 Max FET2 Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS ±12 9.0 ±12 7.3 IDSM 7.2 5.9 TA=25°C Continuous Drain Current A D2 D1 TA=70°C Pulsed Drain Current B Units V V A IDM 40 40 B IAR 22 12 A Repetitive avalanche energy L=0.3mH B TA=25°C EAR 73 22 mJ 2.0 2.0 1.3 1.3 Avalanche Current Power DissipationA TA=70°C Junction and Storage Temperature Range Thermal Characteristics FET1 Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Lead C Thermal Characteristics FET2 Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. PDSM TJ, TSTG -55 to 150 -55 to 150 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Symbol t ≤ 10s Steady-State Steady-State W RθJA RθJL °C Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W AO4922 FET1 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=4.5V, VDS=5V 40 TJ=125°C VGS=10V, ID=9A RDS(ON) Static Drain-Source On-Resistance Max 0.01 0.1 6 20 0.1 µA 1.8 2.4 V 13 15.8 20.2 25.2 15 18.5 mΩ 0.5 V 4 A 30 VDS=24V, VGS=0V IDSS ID(ON) Typ TJ=125°C VGS=4.5V, ID=7A V Forward Transconductance VDS=5V, ID=9A 78 VSD Diode Forward Voltage IS=1A,VGS=0V 0.38 IS Maximum Body-Diode + Schottky Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1980 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz mA A gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units mΩ S 2574 pF 317 pF 111 pF Ω 1.3 2.0 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 33.0 43 Qg(4.5V) Total Gate Charge 15.0 nC 5.3 nC 6.0 nC 5.5 ns 5.5 ns 27.0 ns 4.3 ns VGS=10V, VDS=15V, ID=9A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=9A, dI/dt=300A/µs 11 Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=300A/µs 7 VGS=10V, VDS=15V, RL=1.7Ω, RGEN=3Ω 13 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev1: May 2011 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4922 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 80 VDS=5V 25 6V 4.5V 20 ID(A) ID (A) 60 15 40 10 VGS=3.5V 20 5 0 125° 0 0 1 2 3 4 5 1 1.5 VDS (Volts) 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics DYNAMIC PARAMETERS Figure 1: On-Region Characteristics 18 Normalized On-Resistance 2 VGS=4.5V 16 RDS(ON) (mΩ ) 25°C 14 VGS=10V 12 10 VGS=10V ID=9A 1.8 1.6 VGS=4.5V 1.4 ID=7A 1.2 1 0.8 0 5 10 15 20 25 30 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 35 1.0E+02 1.0E+01 ID=9A 30 125°C 25 125°C IS (A) RDS(ON) (mΩ ) 1.0E+00 20 25°C 1.0E-01 1.0E-02 1.0E-03 25°C 15 1.0E-04 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4922 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 2500 VDS=15V ID=9A 6 Capacitance (pF) VGS (Volts) 8 4 Ciss 2000 1500 1000 Crss 2 Coss 500 0 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 40 0 DYNAMIC PARAMETERS 100.0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 90 100µs RDS(ON) limited 70 1ms 1.0 10s 1s DC 0.1 TJ(Max)=150°C TA=25°C 80 10ms Power (W) ID (Amps) 10 100 10µs 10.0 5 60 50 40 30 TJ(Max)=150°C TA=25°C 20 10 0.0 0.01 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 0.1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. 0.01 T 100 1000 AO4922 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 0.9 1.0E-02 20A 0.8 VDS=24V 0.7 VSD(V) IR (A) 1.0E-03 VDS=12V 1.0E-04 0.6 0.5 10A 5A 0.4 0.3 1.0E-05 0.2 IS=1A 0.1 1.0E-06 0 DYNAMIC 50 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. PARAMETERS Junction Temperature 25 8 20 2.5 trr (ns) 4 Irm (A) 125ºC di/dt=800A/us 12 25ºC Qrr 10 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 15 6 15 50 125ºC di/dt=800A/us Qrr (nC) 0 Irm 2 125ºC 9 1.5 trr S 0 25ºC 6 1 25ºC 25ºC 2 5 S 3 0.5 125ºC 0 0 0 5 10 15 20 25 10 125ºC 7 6 5 125º 10 25ºC 5 Qrr 4 3 0 0 200 400 600 800 0 1000 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 25 30 2.5 25ºC 2 9 trr 25ºC 6 1.5 1 2 1 Irm 20 Is=20A 125ºC 12 trr (ns) Qrr (nC) 25ºC 15 15 3 15 8 Is=20A 10 18 9 Irm (A) 20 5 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 0 0 30 3 S 125ºC 0 0 200 400 600 800 0.5 0 1000 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt S 0 AO4922 FET2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V Typ Max 0.002 1 30 VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 V TJ=55°C 5 100 VGS=10V, ID=7.3A 1 24 VGS=4.5V, ID=6A 23.5 29 mΩ 48 mΩ VGS=2.5V, ID=5A 34.7 VDS=5V, ID=7.3A 26 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Rg Gate resistance Qgs Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 0.71 900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=7.3A VGS=10V, VDS=15V, RL=2Ω, RGEN=6Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/µs IF=7.3A, dI/dt=100A/µs mΩ S 1 V 2.8 A 1100 pF 88 pF 65 SWITCHING PARAMETERS Qg Total Gate Charge Qgd V 35 Forward Transconductance Output Capacitance 1.5 20 gFS Reverse Transfer Capacitance nA 28 TJ=125°C Static Drain-Source On-Resistance Coss µA A RDS(ON) Crss Units pF 0.95 1.5 Ω 10 12 nC 1.8 nC 3.75 nC 3.2 ns 3.5 ns 21.5 ns 2.7 ns 16.8 21 8 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev1: May 2011 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4922 FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 20 10V 50 40 3V 12 ID(A) ID (A) VDS=5V 16 4.5V 30 2.5V 125°C 8 20 25°C 4 VGS=2V 10 0 0 0 1 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 5 30 0.5 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics Normalized On-Resistance 25 1.2 20 VGS=10V VGS=10V ID=7.3A 0.9 0.6 0 5 10 15 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 55 1.0E+00 50 ID=7.3A 125°C 40 125°C IS (A) 45 35 3 ID=6A VGS=4.5V 1.5 15 RDS(ON) (mΩ ) 1 1.8 VGS=4.5V RDS(ON) (mΩ ) 0 1.0E-01 1.0E-02 1.0E-03 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS 25°C OR USES AS CRITICAL 25 1.0E-04 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 20 25°COF ITS PRODUCTS. AOS RESERVES THE RIGHT OUT OF SUCH APPLICATIONS OR USES TO IMPROVE PRODUCT DESIGN, 1.0E-05 15 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD (Volts) VGS (Volts) Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AO4922 FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=15V ID=7.3A 1200 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 1000 800 600 400 Crss 1 Coss 200 0 0 0 2 4 6 8 10 12 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.00 1ms 1.00 1s 10s DC TJ(Max)=150°C TA=25°C 0.10 TJ(Max)=150°C TA=25°C 40 Power (W) ID (Amps) 100µs RDS(ON) limited 30 50 10µs 10.00 10 30 20 10 0 0.01 0.01 0.1 1 VDS (Volts) 10 0.0001 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR D=T /T THE CONSUMER MARKET.PDAPPLICATIONS OR USES AS CRITICAL on COMPONENTS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.01 IN LIFE SUPPORT DEVICES OR SYSTEMS TJ,PK=T A+PDM.ZθJA.RθJA Ton IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RθJA=62.5°C/W RESERVES THE RIGHT TO T Single Pulse NOTICE. FUNCTIONS AND RELIABILITY WITHOUT 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. 100 1000