BAV19W-G, BAV20W-G, BAV21W-G www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: SOD-123 Weight: approx. 9.4 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE TYPE DIFFERENTIATION ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS BAV19W-G VR = 100 V BAV19W-G3-08 or BAV19W-G3-18 AS Single diode Tape and reel BAV20W-G VR = 150 V BAV20W-G3-08 or BAV20W-G3-18 AT Single diode Tape and reel BAV21W-G VR = 200 V BAV21W-G3-08 or BAV21W-G3-18 AU Single diode Tape and reel PART ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAV19W-G VR 100 V BAV20W-G VR 150 V BAV21W-G VR 200 V BAV19W-G VRRM 120 V BAV20W-G VRRM 200 V BAV21W-G VRRM 250 V IF 250 mA IF(AV) 200 mA f 50 Hz IFRM 625 mA t<1s IFSM 1 A Ptot 410 mW Continuous reverse voltage Repetitive peak reverse voltage DC Forward current (1) Rectified current (average) half wave rectification with resist. load (1) Repetitive peak forward current (1) Surge forward current Power dissipation (1) THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT RthJA 375 K/W Tj 150 °C (1) Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 150 °C Thermal resistance junction to ambient air (1) Junction temperature (1) Storage temperature range Note (1) Valid provided that leads are kept at ambient temperature Rev. 1.3, 13-May-13 Document Number: 85188 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19W-G, BAV20W-G, BAV21W-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage Leakage current SYMBOL MIN. TYP. MAX. UNIT VF 1 V IF = 200 mA VF 1250 mV VR = 100 V BAV19W-G IR 100 nA VR = 100 V, Tj = 100 °C BAV19W-G IR 15 μA VR = 150 V BAV20W-G IR 100 nA μA VR = 150 V, Tj = 100 °C BAV20W-G IR 15 VR = 200 V BAV21W-G IR 100 nA VR = 200 V, Tj = 100 °C BAV21W-G IR 15 μA IF = 10 mA rf 5 VR = 0, f = 1 MHz CD 1.5 pF IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 trr Dynamic forward resistance Diode capacitance Reverse recovery time PART IF = 100 mA 50 ns Ptot - Admissible Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) I F - Forward Current (mA) 1000 Tj = 100 °C 100 10 25 °C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 0.2 DC current IF Current (rectif.) I O 0.1 0 18859 60 90 120 200 100 0 Tamb - Ambient Temperature (°C) 20 40 60 80 100 120 140 Tamb - Ambient Temperature (°C) Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 100 10 1 1 150 Fig. 2 - Admissible Forward Current vs. Ambient Temperature Rev. 1.3, 13-May-13 300 0 rf - Dynamic Forward Resistance (Ω) I O , I F - Admissible Forward Current (A) 0.3 30 400 21937 Fig. 1 - Forward Current vs. Forward Voltage 0 500 1 VF - Forward Voltage (V) 18858 600 18861 10 100 IF - Forward Current (mA) Fig. 4 - Dynamic Forward Resistance vs. Forward Current Document Number: 85188 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19W-G, BAV20W-G, BAV21W-G www.vishay.com Vishay Semiconductors 2.0 CD - Diode Capacitance (pF) IR(Tj)/IR (25 °C) - Leakage Current 1000 100 10 Reverse Voltage BAV19W-G VR = 100 V BAV20W-G VR = 150 V 1 80 120 160 1.2 1.0 0.8 0.6 0.4 0 200 Tj - Junction Temperature (°C) 18862-1 1.4 0 0.1 40 1.6 0.2 BAV21W-G VR = 200 V 0 1.8 21942 Fig. 5 - Leakage Current vs. Junction Temperature 5 10 15 20 25 30 35 VR - Reverse Voltage (V) Fig. 6 - Diodes Capacitance vs. Reverse Voltage 100 IFSM (A) 10 1 TJ = 25 °C - Prior to Surge 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 tp - Test Pulse (s) Fig. 7 - Non-Repetitive Peak Forward Current vs. Pulse Duration Maximum Admissible Values of Square Pulses Rev. 1.3, 13-May-13 Document Number: 85188 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19W-G, BAV20W-G, BAV21W-G www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.40 (0.055) 3.85 (0.152) 1.7 (0.067) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.3, 13-May-13 Document Number: 85188 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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