Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 12 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 26% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 60 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S19060NR1 MRF6S19060NBR1 1930- 1990 MHz, 12 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S19060NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S19060NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +68 Vdc Gate- Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +175 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 60 W CW Case Temperature 79°C, 12 W CW RθJC 0.84 1.0 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF6S19060NR1 MRF6S19060NBR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 1.5 2.2 2.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 610 mAdc) VGS(Q) 2 2.8 4 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.0 Adc) VDS(on) 0.2 0.3 0.4 Vdc Crss — 1.5 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 610 mA, Pout = 12 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 14.5 16 18.5 dB Drain Efficiency ηD 24.5 26 — % Intermodulation Distortion IM3 — - 37 - 35 dBc ACPR — - 51 - 48 dBc IRL — - 12 - 10 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S19060NR1 MRF6S19060NBR1 2 RF Device Data Freescale Semiconductor R1 VBIAS VSUPPLY R2 C6 C1 C2 C3 Z6 C4 C5 Z17 RF INPUT R3 Z1 Z2 Z3 Z4 Z5 Z8 Z9 Z10 Z11 Z12 Z13 Z7 Z14 Z15 RF OUTPUT C8 Z16 C7 DUT VSUPPLY C9 Z1 Z2 Z3 Z4 Z5 Z6 Z7, Z8 Z9 Z10 0.250″ x 0.083″ Microstrip 0.750″ x 0.083″ Microstrip 0.375″ x 0.425″ Microstrip 0.370″ x 0.083″ Microstrip 0.365″ x 1.000″ Microstrip 0.650″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip 0.240″ x 1.000″ Microstrip 0.310″ x 0.315″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB C10 C11 0.225″ x 0.083″ Microstrip 0.325″ x 0.500″ Microstrip 0.450″ x 0.083″ Microstrip 0.300″ x 0.245″ Microstrip 0.195″ x 0.083″ Microstrip 1.150″ x 0.070″ Microstrip 1.150″ x 0.083″ Microstrip Arlon AD250, 0.030″, εr = 2.5 Figure 1. MRF6S19060NR1(NBR1) Test Circuit Schematic Table 6. MRF6S19060NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 100 nF Chip Capacitor CDR33BX104AKWS Kemet C2, C3, C7, C8, C9 6.8 pF Chip Capacitors 600B6R8BT250XT ATC C4, C5, C6, C10, C11 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata R1 1 k Chip Resistor R2 10 k Chip Resistor R3 10 Chip Resistor MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 3 R1 C4 R2 C6 C1 C2 C5 C3 R3 C8 CUT OUT AREA C7 C9 C10 C11 MRF6S19060N/NB Rev. 2 Figure 2. MRF6S19060NR1(NBR1) Test Circuit Component Layout MRF6S19060NR1 MRF6S19060NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 27 16.5 26.5 ηD 26 16.3 16.2 16.1 IRL VDD = 28 Vdc, Pout = 12 W (Avg.) IDQ = 610 mA, 2−Carrier N−CDMA 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 16 15.9 25.5 25 −30 −36 IM3 −42 15.8 −48 15.7 −54 ACPR −10 IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) 16.4 −60 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 −14 −18 −22 −26 −30 IRL, INPUT RETURN LOSS (dB) Gps ηD, DRAIN EFFICIENCY (%) 16.6 f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 12 Watts Avg. 38.5 16.1 38 ηD 37.5 15.9 15.8 15.7 IRL 15.6 15.5 VDD = 28 Vdc, Pout = 24 W (Avg.) IDQ = 610 mA, 2−Carrier N−CDMA 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) IM3 36.5 −20 −25 −30 15.4 15.3 37 −35 ACPR −10 IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) 16 −40 −45 15.2 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 −14 −18 −22 −26 −30 IRL, INPUT RETURN LOSS (dB) Gps ηD, DRAIN EFFICIENCY (%) 16.2 f, FREQUENCY (MHz) Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 24 Watts Avg. 18 −10 Gps, POWER GAIN (dB) 17 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 915 mA 763 mA 610 mA 16 458 mA 15 305 mA 14 13 VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing 12 VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −20 IDQ = 305 mA 915 mA −30 −40 −50 458 mA 763 mA 610 mA −60 10 1 100 200 1 10 100 200 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 5 −10 VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 610 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz P3dB = 49.503 dBm (89.19 W) −30 3rd Order −40 5th Order −50 7th Order −60 0.1 Ideal 53 Pout, OUTPUT POWER (dBm) −20 51 P1dB = 48.792 dBm (75.72 W) 49 1 45 43 VDD = 28 Vdc, IDQ = 610 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz 39 23 100 10 Actual 47 41 25 27 29 31 35 33 37 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulse CW Output Power versus Input Power 60 VDD = 28 Vdc, IDQ = 610 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 50 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth 40 PAR = 9.8 dB @ 0.01% Probability (CCDF) 25_C −30_C 25_C 85_C −20 −30_C 85_C 25_C −30 ηD 30 −30_C −40 ACPR IM3 20 −50 TC = −30_C Gps 10 −10 IM3 (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS −60 85_C 25_C −70 0 10 1 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power TC = −30_C 50 17 25_C ηD 16 85_C 15 Gps 40 30 85_C 20 14 VDD = 28 Vdc IDQ = 610 mA f = 1960 MHz 13 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power 15 14 16 V 13 0 10 16 10 12 1 IDQ = 610 mA f = 1960 MHz 60 Gps, POWER GAIN (dB) 18 Gps, POWER GAIN (dB) 17 70 −30_C ηD, DRAIN EFFICIENCY (%) 19 100 20 V 24 V 28 V 32 V VDD = 12 V 12 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain versus Output Power MRF6S19060NR1 MRF6S19060NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS x AMPS2) 109 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature N - CDMA TEST SIGNAL 100 0 1.2288 MHz Channel BW −10 −20 1 −IM3 in 1.2288 MHz Integrated BW −30 +IM3 in 1.2288 MHz Integrated BW −40 0.1 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 (dB) PROBABILITY (%) 10 −50 −60 −70 −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW −80 0.0001 0 2 4 6 8 10 −90 PEAK−TO−AVERAGE (dB) Figure 13. 2 - Carrier CCDF N - CDMA −100 −7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 14. 2 - Carrier N - CDMA Spectrum MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 7 Zo = 10 Ω Zload f = 1990 MHz f = 1930 MHz f = 1990 MHz f = 1930 MHz Zsource VDD = 28 Vdc, IDQ = 610 mA, Pout = 12 W Avg. f MHz Zsource Ω Zload Ω 1930 4.54 - j7.95 4.15 - j5.58 1960 4.33 - j7.74 4.17 - j5.34 1990 4.20 - j7.43 4.22 - j5.10 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S19060NR1 MRF6S19060NBR1 8 RF Device Data Freescale Semiconductor NOTES MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 9 NOTES MRF6S19060NR1 MRF6S19060NBR1 10 RF Device Data Freescale Semiconductor NOTES MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS E1 B A 2X E3 GATE LEAD DRAIN LEAD D D1 4X e 4X aaa b1 C A M 2X 2X D2 c1 E H DATUM PLANE F ZONE J A A1 2X A2 E2 NOTE 7 E5 E4 4 D3 3 ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW C SEATING PLANE PIN 5 NOTE 8 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S19060NR1 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 DRAIN DRAIN GATE GATE SOURCE MRF6S19060NR1 MRF6S19060NBR1 12 RF Device Data Freescale Semiconductor MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 13 MRF6S19060NR1 MRF6S19060NBR1 14 RF Device Data Freescale Semiconductor MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S19060NR1 MRF6S19060NBR1 Document Number: MRF6S19060N Rev. 3, 5/2006 16 RF Device Data Freescale Semiconductor