SSC MUR860 Glass passivated super fast rectifier Datasheet

MUR805 THRU MUR860
GLASS PASSIVATED SUPER
FAST RECTIFIERS
PRODUCT SUMMARY
Reverse Voltage 50 to 600 Volts
Foward Current 8.0 Amperes
FEATURES
TO-220AC
Glass passivated chip
Superfast switching time for hight efficiency
Low reverse leakage current
High surge capacity
MECHANICAL DATA
Case: TO-220AC full molded plastic package
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked
Standard packaging: Any
Weight: 0.08 ounces, 2.24 grams
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
(Ratings at 25 C ambient temperature unless otherwise specified.)
Parameter
Symbol
MUR805
MUR810
MUR820
MUR840
MUR860
Unit
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
Volts
Maximum RMS voltage
VRMS
35
70
140
280
420
Volts
Maximum DC blocking voltage
V DC
50
100
200
400
600
Volts
Maximum average forward rectified current at TC=100oC
IF(AV)
8.0
Amps
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
125.0
Amps
Maximum instantaneous forward voltage at 8.0A
VF
Maximum DC reverse current
at rated DC blocking voltage
@TJ=25oC
@TJ=125oC
Maximum reverse recovery time at
IF=0.5A, IR=1.0A, Irr=0.25A
Operating junction and storage temperature range
1.0
1.3
1.8
Volts
IR
10.0
500
uA
trr
50
nS
TJ, TSTG
-55 to +150
o
C
Notes: 1. Pulse test: Pulse width 300 usec, Duty ccle 2%
03/07/2007 Rev.1.00
www.SiliconStandard.com
1
MUR805 THRU MUR860
RATINGS AND CHARACTERISTIC CURVES
(TA = 25oC unless otherwise noted)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
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use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
03/07/2007 Rev.1.00
www.SiliconStandard.com
2
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