LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 30 Volts L2N7002FDW1T1G S-L2N7002FDW1T1G N–Channel SC–88 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. FEATURES ● RDS(ON) ≦8Ω@VGS=4V ● RDS(ON) ≦13Ω@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current Simplified Schematic capability ● Capable doing Cu wire bonding ● ESD Protected:1000V 3 2 1 D2 G1 S1 S2 G2 D1 4 5 6 APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ORDERING INFORMATION Device (Top View) Marking Shipping L2N7002FDW1T1G S-L2N7002FDW1T1G 72F 3000 Tape & Reel L2N7002FDW1T3G S-L2N7002FDW1T3G 72F 10000 Tape & Reel THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation Alumina Substrate,(Note 2.) TA = 25°C Derate above 25°C PD 300 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W TJ, Tstg -55 to +150 °C Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C Junction and Storage Temperature 2.4 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. Rev .O 1/4 LESHAN RADIO COMPANY, LTD. L2N7002FDW1T1G,S-L2N7002FDW1T1G Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Parameter Electrical Characteristics (Tj =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 0.8 IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-Resistance* VSD Diode Forward Voltage * Typ Max Unit STATIC V 1.5 V VDS=0V, VGS=±20V ±10 μA VDS=30V, VGS=0V 1 μA VGS=4V, ID=10mA 5 8 VGS=2.5V, ID=1mA 7 13 IS=200mA, VGS=0V 1.2 Ω V DYNAMIC Qg Total Gate Charge 4.9 Qgs Gate-Source Charge Qgd Gate-Drain Charge 0.6 Ciss Input Capacitance 21 Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Turn-On Rise Time VDD=5V, RL =500Ω 7.3 td(off) Turn-Off Delay Time VGES=5V,RG=10Ω 31.3 tf Turn-Off Fall Time VDS=25V, VGS=10V, ID=0.22A VDS=25V, VGS=0V, f=1MHz nC 2.1 pF 10 2 10.1 ns 28.2 Notes: * . Pulse test; pulse width ≦ 300us, duty cycle≦ 2%. Rev .O 2/4 LESHAN RADIO COMPANY, LTD. L2N7002FDW1T1G,S-L2N7002FDW1T1G Typical Characteristics (TJ =25℃ Noted) Rev .O 3/4 LESHAN RADIO COMPANY, LTD. L2N7002FDW1T1G,S-L2N7002FDW1T1G Typical Characteristics (TJ =25℃ Noted) Rev .O 4/5 LESHAN RADIO COMPANY, LTD. L2N7002FDW1T1G,S-L2N7002FDW1T1G SC−88 (SOT−363) CASE 419B−02 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. G 6 5 4 DIM A B C D G H J K N S −B− S 1 2 3 D 6 PL 0.2 (0.008) M B M INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 N STYLE 1: PIN 1. SOURCE 2 2. GATE 2 3. DRAIN 1 4. SOURCE 1 5. GATE 1 6. DRAIN 2 J C H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches Rev .O 5/5