NJRC NJG1301V-C4 Medium power amplifier gaas mmic Datasheet

NJG1301V
MEDIUM POWER AMPLIFIER GaAs MMIC
nGENERAL DESCRIPTION
NJG1301V is a medium power amplifier which is
designed for use of output stage of Japanese
PHS and digital wireless phone.
NJG1301V features low operating voltage, high
efficiency, and comes with, internal input and output matching
circuit and very small SSOP package. This amplifier is operated
up to 21dBm output level with very low noise generation.
nPACKAGE OUTLINE
NJG1301V
nFEATURES
lLow operating voltage
+3.0V typ.
lLow current consumption
185mA typ. @f=1.9GHz, Pout=21dBm
lLow distortion (ACP)
-60dBc typ. @f=1.9GHz, Pout=21dBm
lReduction of redact parasitic oscillation
lInput and output internal matching circuits
lPackage
SSOP14
nPIN CONFIGURATION
V Type
(Top View)
1
14
2
13
3
12
4
11
5
10
6
9
7
8
Pin connection
1.RFin 8.RFout
2.GND 9.GND
3.VGG1 10.VDD2
4.GND 11.GND
5.VGG2 12.VDD1
6.GND 13.GND
7.GND 14.GND
-1-
NJG1301V
nABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain Voltage
Gate Voltage
Input Power
Power Dissipation
Operating Temperature
Storage Temperature
SYMBOL
VDD1,VDD2
VGG1,VGG2
Pin
PD
Topr
Tstg
(Ta=+25°C, Zs=Zl=50Ω)
RATINGS
UNITS
6
V
-4
V
10
dBm
600
mW
-30~+85
°C
-40~+150
°C
CONDITIONS
VGG1,VGG2 =-0.9V
VDD1,VDD2=-3.0V
VDD1,VDD2=-3.0V, VGG1,VGG2 =-0.9V
At on PCB boad
nELECTRICAL CHARACTERISTICS
PARAMETER
Operating Freq.
Drain Voltage
Gate Voltage
Idle Current *1
Operating Current *1
Gate Current *2
Small Signal Gain
Gain Flatness
Pout at 1dB Gain
Compression point
Adjacent Channel
Leakage Power 1
Adjacent Channel
Leakage Power 2
Input VSWR
Load VSWR Tolerance
SYMBOL
freq
VDD1,2
VGG1,2
Iidle
IDD
IGG
Gain
Gflat
P-1dB
Pacp1
Pacp2
VSWRi
-
CONDITIONS
VDD1,2=3.0V
VDD1,2=3.0V, Iidle=170mA
VDD1,2=3.0V, RF No signal
VDD1,2=3.0V, Pout=21dBm
VDD1,2=3.0V, Pout=21dBm
VDD1,2=3.0V, Iidle=170mA
VDD1,2=3.0V, Iidle=170mA
VDD1,2=3.0V
VDD1,2=3.0V, Pout=21dBm
offset=600kHz, Pin; π/4 DQPSK
VDD1,2=3.0V, Pout=21dBm
offset=900kHz, Pin; π/4 DQPSK
VDD1,2=3.0V
VDD1,2=3.0V, Pout=21dBm
Load VSWR=4:1, All phase
*1: Total current of VDD1 terminal and VDD2 terminal
*2: Total current of VGG1 terminal and VGG2 terminal
-2-
MIN
1.89
2.9
-1.25
165
170
-150
20
0
(Ta=25°C, Zs=Zl=50Ω)
TYP
MAX
UNITS
1.92
GHz
3.0
5.0
V
-0.9
-0.6
V
170
175
mA
185
195
mA
-70
uA
23
26
dB
0.5
1.0
dB
21
22
-
dBm
-
-60
-55
dBc
-
-65
-60
dBc
2.2
Parasitic Osc. vs Fundamental
Signal Level -60dBc Max.
NJG1301V
nTYPICAL CHARACTERISTICS
Gain vs. Frequency
(V =3.0V, I =170mA, V
DD
DD
o
=-0.71V, T =25 C )
GG
a
40
Gain (dB)
30
20
10
0
-10
0.0
1.0
2.0
Frequency f (GHz)
P
acp
3.0
vs. Operating Current vs. V
Operating Current, Gate Current
vs. Input Power
o
DD
o
(P
out
=21dBm ,f=1.9GHz, T =25 C)
(V
a
-50
250
=3.0V, I
DD
=170mA, f=1.9GHz ,T a =25 C)
idle
10
V =2.9V
(mA)
3.3V
-65
5.0V
-70
4.0V
-75
140
I
0
GG
I
-10
-20
100
150
160
170
180
190
200
-10
-5
Gain, Pacp vs. Ambient Temperature
=3.0V, I
DD
=170mA, P
idle
out
Gain
22
20
-65
0
20
40
60
o
Ambient Temperature T a ( C)
80
DD
Operating Current I (mA)
(dBc)
acp
P
Gain (dBm)
acp
-60
(dBm)
190
26
24
10
(VDD=3.0V, idle
I =170mA, Pout=21dBm, f=1.9GHz)
-55
-20
5
Operating Current vs. Ambient Temperature
=21dBm, f=1.9GHz)
28
P
0
Input Power Pin
DD
-40
GG
150
Operating Current I (mA)
(V
DD
200
Gate Current I
Operating Current I
(dBc)
-60
acp
P
DD
3.0V
( uA)
DD
-55
185
180
175
-40
-20
0
20
40
60
80
Ambient Temperature T ( oC)
a
-3-
NJG1301V
nTYPICAL CHARACTERISTICS
Gain vs. PHS Band Frequency
|S |, |S | vs. Frequency
o
11
(V =3.0V, I =170mA, V =-0.71V, T =25 C)
DD
DD
GG
22
a
(V
25
o
DD
=3.0V, I =170mA, T =25 C)
DD
a
20
24
23
|S |, |S | (dB)
0
|S |
22
22
22
-10
11
|S11|
21
-20
-30
20
1.89
1.90
1.91
0.0
1.92
1.0
Frequency f (GHz)
Output Power,Total Current vs. Input Power
(V
o
( V =3V, f=1.9GHz, T =25 C )
=3V, f=1.9GHz, T =25 C )
DD
a
10
200
5
150
Total Current
@I =80mA
100
idle
60mA
40mA
20mA
-5
-10
-25
-20
-15
-10
-5
0
Input Power P in (dBm)
-4-
5
10
(dBm)
250
20mA
out
15
Total Current (mA)
(dBm)
out
Output Power P
40mA
=80mA
idle
60mA
20
300
60mA
0
70
Output Power @I
=80mA
idle
Output Power P
Output Power @I
a
25
350
25
20
3.0
Output Power,P.A.E. vs. Input Power
o
DD
2.0
Frequency f (GHz)
40mA
15
60mA
5
0
-10
30
40mA
0
-5
50
20mA P.A.E.
@I =80mA 40
idle
10
50
60
20
20mA
10
0
-25
-20
-15
-10
-5
0
Input Power P (dBm)
in
5
10
Power Added Efficiency (%)
Gain (dB)
10
NJG1301V
nRECOMMENDED CIRCUIT
V TYPE
RFin
1
GND 14
RFin
GND
GND
VGG
(-0.5 ~ -1.2V)
IDD=0 @VGG < -2V
C3
C1
C1
C2
C2
7
VGG1
VDD1
GND
GND
VGG2
VDD2
GND
GND
GND
RFout
C2
L1
8
C2
C1
C1
VDD
(3.0~5.0V)
C3
RFout
C1: 1000pF
C2: 33pF
C3: 1uF
C4: 2.2nH
nRECOMMENDED PCB DESIGN
PCB : FR4 t=0.2mm
1uF
CAPACITOR
MURATA GRM39 Series
INDUCTOR
TAIYO-YUDEN HK1608 Series
2.2nH
1uF
-5-
NJG1301V
nAPPLICATION CIRCUIT ( NEGATIVE VOLTAGE GENERATOR)
+3.0V
-3.0V
10KΩTrimmer Resistance
-
8
7
6
5
+
10uF
(7KΩ)
NJU7660
2
1
3
VGG
(-0.9Vtyp.)
4
(3KΩ)
+
-
10uF
-6-
NJG1301V
nPACKAGE OUTLINE (SSOP14)
Lead material
Lead surface finish
Molding material
UNIT
Weight
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
: Copper
: Solder plating
: Epoxy resin
: mm
:66mg
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
-7-
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