IGP06N60T q TrenchStop® Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology Features: • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • Low EMI 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-220-3-1 Applications: • Variable Speed Drive for washing machines and air conditioners • Buck converters Type IGP06N60T VCE IC;Tc=100°C VCE(sat),Tj=25°C 600V 6A 1.5V Tj,max Marking Package 175°C G06T60 PG-TO-220-3-1 Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCE DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpul s 18 Turn off safe operating area - 18 VGE ±20 V tSC 5 µs Power dissipation TC = 25°C Ptot 88 W Operating junction temperature Tj -40...+175 °C Storage temperature Tstg -55...+175 600 Unit V A 12 6 VCE ≤ 600V, Tj ≤ 175°C Gate-emitter voltage 2) Short circuit withstand time VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s 1 2) 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.1 June 06 IGP06N60T q TrenchStop® Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 1.7 K/W RthJA 62 Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 600 - - T j =2 5 °C - 1.5 2.05 T j =1 7 5° C - 1.8 4.1 4.6 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0. 25m A Collector-emitter saturation voltage VCE(sat) Gate-emitter threshold voltage VGE(th) V V G E = 15 V , I C = 6 A I C = 0. 18m A , 5.7 VCE=VGE Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 °C - - 40 T j =1 7 5° C - - 700 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 6 A - 3.6 - S Integrated gate resistor RGint none Ω Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 368 - Output capacitance Coss V G E = 0V , - 28 - Reverse transfer capacitance Crss f= 1 MH z - 11 - Gate charge QGate V C C = 48 0 V, I C =6 A - 42 - nC - 7 - nH - 55 - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C ≤ 5 µs V C C = 4 0 0 V, T j = 25 ° C Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.1 June 06 IGP06N60T q TrenchStop® Series Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 9 - - 6 - - 130 - - 58 - - 0.09 - - 0.11 - - 0.2 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G = 23 Ω, 1) L σ = 60 n H, 2) C σ = 4 0p F Energy losses include “tail” and diode 2) reverse recovery. ns mJ Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. typ. max. - 9 - - 8 - - 165 - - 84 - - 0.14 - - 0.18 - - 0.335 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) 2) T j =1 7 5° C, V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G = 2 3Ω 2) L σ =6 0 nH , 2) C σ = 4 0p F Energy losses include “tail” and diode 3) reverse recovery . ns mJ Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Diode used IDP06E60 Power Semiconductors 3 Rev. 2.1 June 06 IGP06N60T q TrenchStop® Series tp=1µs 10A 15A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 18A T C =80°C 12A T C =110°C 9A 6A Ic 3A Ic 5µs 10µs 50µs 1A 500µs 5ms DC 0A 100Hz 1kHz 10kH z 0,1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23Ω) 1000V 15A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 100V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C;VGE=15V) 80W 60W 40W 20W 0W 25°C 10V 50°C 75°C 5A 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 10A 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2.1 June 06 IGP06N60T q TrenchStop® Series 15A 15A V G E =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT V G E =20V 15V 12A 13V 11V 9A 9V 7V 6A 3A 11V 9A 9V 7V 6A 0A 0V 1V 2V 3V 0V 1 5A 1 2A 9A 6A T J =1 75 °C 3A 25 °C 0V 2V 4V 6V 8V 1 0V 2V 3V IC =12A 2,5V 2,0V IC =6A 1,5V 1,0V IC =3A 0,5V 0,0V -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 13V 3A 0A 0A 15V 12A 5 Rev. 2.1 June 06 TrenchStop® Series td(off) 100ns tf 100ns t, SWITCHING TIMES t, SWITCHING TIMES t d(off) t d(on) 10ns IGP06N60T q tf td(on) tr 10ns tr 1ns 0A 3A 6A 9A 12A 1ns 15A 10Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 23Ω, Dynamic test circuit in Figure E) tf 10ns t d(on) tr 1ns 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 6A, RG = 23Ω, Dynamic test circuit in Figure E) Power Semiconductors 50Ω 70Ω 90Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES 100ns td(off) 30Ω 6V 5V m ax. 4V typ. 3V m in. 2V 1V 0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.18mA) 6 Rev. 2.1 June 06 IGP06N60T q TrenchStop® Series *) E on and E ts include losses E ts * 0,5 mJ 0,4 mJ 0,3 mJ E off 0,2 mJ E on* 0,1 mJ 0,0 mJ 0A 2A 4A 6A 8A 0,4 mJ 0,3 mJ E on* 0,2 mJ E off 0,1 mJ 0,0 mJ 10A 10Ω IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175°C, VCE=400V, VGE=0/15V, RG=23Ω, Dynamic test circuit in Figure E) 30Ω 55Ω 80Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E) *) E on and E ts include losses *) E on and E ts include losses due to diode recovery 0,5m J E, SWITCHING ENERGY LOSSES 0,4mJ E, SWITCHING ENERGY LOSSES E ts* due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) E on and E ts include losses due to diode recovery 0,6 mJ 0,3mJ E ts * 0,2mJ E off 0,1mJ due to diode recovery E ts * 0,4m J 0,3m J E off 0,2m J E on * 0,1m J E on* 0,0mJ 50°C 100°C 0,0m J 200V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE = 0/15V, IC = 6A, RG = 23Ω, Dynamic test circuit in Figure E) Power Semiconductors 300V 400V 500V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 6A, RG = 23Ω, Dynamic test circuit in Figure E) 7 Rev. 2.1 June 06 IGP06N60T q TrenchStop® Series VGE, GATE-EMITTER VOLTAGE 1nF C iss c, CAPACITANCE 15V 120V 10V 48 0V 100pF C oss 5V C rss 10pF 0V 0nC 10 nC 20n C 30nC 40nC 50nC 0V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 6 A) 10V 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 80A 60A 40A 20A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 400V, Tj ≤ 150°C) Power Semiconductors 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C, TJmax<150°C) 8 Rev. 2.1 June 06 ZthJC, TRANSIENT THERMAL RESISTANCE TrenchStop® Series IGP06N60T q 0 10 K/W D=0.5 0.2 R,(K/W) 0.3837 0.4533 0.5877 0.2483 0.1 -1 0.05 10 K/W R1 0.02 0.01 τ, (s) 5.047*10-2 4.758*10-3 4.965*10-4 4.717*10-5 R2 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 single pulse -2 10 K/W 1µs 10µs 100µs 1ms 10m s 100m s tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 9 Rev. 2.1 June 06 IGP06N60T q TrenchStop® Series Dimensions TO-220AB PG-TO220-3-1 symbol [mm] min 10 max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M Power Semiconductors [inch] 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 Rev. 2.1 June 06 IGP06N60T q TrenchStop® Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tr r tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =60nH an d Stray capacity C σ =40pF. Figure B. Definition of switching losses Power Semiconductors 11 Rev. 2.1 June 06 TrenchStop® Series IGP06N60T q Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 6/14/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.1 June 06