EEPROM
AS28C010
Austin Semiconductor, Inc.
128K x 8 EEPROM
PIN ASSIGNMENT
(Top View)
EEPROM Memory
5 Volt, Byte Alterable
32-Pin CFP (F), 32-Pin CerDIP (CW)
AVAILABLE AS MILITARY
SPECIFICATIONS
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
Vss
SMD 5962-38267
z MIL-PRF-38535
z
FEATURES
Access speed: 120, 150, 200, and 250ns
Data Retention: 100 Years
z Low power, active current: 50mA, standby current: 500uA
z Single +5V (+10%) power supply
z Data Polling and Toggle
z Erase/Write Endurance (10,000 byte mode / 100,000 page
mode)
z Software Data protection Algorithm
z Automatic , Self-Timed Byte Write
z Automatic Programming:
Automatic Page Write: 10ms (MAX)
z
z
OPTIONS
z
z
z
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
WE\
NC
A14
A13
A8
A9
A11
OE\
A10
CE\
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
MARKINGS
Timing
120ns access
150ns access
200ns access
250ns access
Packages
Ceramic Flat Pack
CerDIP, 600 mil
Operating Temperature Ranges
-Military (-55oC to +125oC)
-Industrial (-40oC to +85oC)
-Full Military Class M Processing
-12
-15
-20
-25
F
CW
XT
IT
883C
*NOTE: Package lid is connected to ground (Vss).
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS
Electrically Erasable Programmable Read Only Memory (EEPROM)
organized as 131, 072 x 8 bits. The AS28C010 is capable of in system
electrical Byte and Page reprogrammability.
The AS28C010 achieves high speed access, low power
consumption, and a high level of reliability by employing advanced
CMOS process and circuitry technology.
This device has a 256-Byte Page Programming function to make its
erase and write operations faster. The AS28C010 features Data
Polling and a toggle signal to indicate completion of erase and programming operations.
This EEPROM provides several levels of data protection., in
AS28C010
Rev. 1.5 5/06
addition to noise protection on the WE signal and write inhibit during
power on and off. Software data protection is implemented using
JEDEC
Optional
Standard
algorithm.
The AS28C010 is designed for high reliability in the most
demanding applications. Data retention is specified for 100 years and
erase/write endurance is guaranteed to a minimum of 100,000 cycles in
the Page Mode and 10,000 cycles in the Byte Mode.
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
EEPROM
Austin Semiconductor, Inc.
AS28C010
FUNCTIONAL BLOCK DIAGRAM
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
EEPROM
AS28C010
Austin Semiconductor, Inc.
FUNCTIONAL DESCRIPTION
Figure 1: Status Bit Assignment
I/O
READ
Read operations are initiated by both OE\ and CE\ LOW.
The read operation is terminated by either CE\ or OE\ returning
HIGH. This two line control architecture eliminates bus
contention in a system environment. The data bus will be in a
high impedance state when either OE\ or CE\ is HIGH.
DP
TB
5
4
3
2
1
0
RESERVED
TOGGLE BIT
DATA\ POLLING
DATA\ POLLING
The AS28C010 features DATA\ Polling as a method to
indicate to the host system that the byte write or page write
cycle has completed. DATA\ Polling allows a simple bit test
operation to determine the status of the AS28C010, eliminating
additional interrupt inputs or external hardware. During the
internal programming cycle, any attempt to
read the last byte written will produce the complement of that
data on I/O7 (i.e., write data = 0xxx xxxx, read data = 1xxx xxxx).
Once the programming cycle is complete, I/O7 will reflect true
data. Note: If the AS28C010 is in the protected state and an
illegal write operation is attempted DATA\ Polling will not
operate.
WRITE
Write operations are initiated when both CE\ and WE\ are
LOW and OE\ is HIGH. The AS28C010 supports both a CE\
and WE\ controlled write cycle. That is, the address is latched
by the falling edge of either CE\ or WE\, whichever occurs last.
Similarly, the data is latched internally by the rising edge of
either CE\ or WE\, whichever occurs first. A byte write
operation, once initiated, will automatically continue to
completion, typically within 5ms.
PAGE WRITE
The page write feature of the AS28C010 allows the entire
memory to be written in 5 seconds. Page write allows two to
two hundred fifty-six bytes of data to be consecutively written
to the AS28C010 prior to the commencement of the internal
programming cycle. The host can fetch data from another
device within the system during a page write operation (change
the source address), but the page address (A8 through A16)
for each subsequent valid write cycle to the part during this
operation must be the same as the initial page address.
TOGGLE BIT
The AS28C010 also provides another method for
determining when the internal write cycle is complete. During
the internal programming cycle, I/O6 will toggle from HIGH to
LOW and LOW to HIGH on subsequent attempts to read the
device. When the internal cycle is complete the toggling will
cease and the device will be accessible for additional read or
write operations.
The page write mode can be initiated during any write
operation. Following the initial byte write cycle, the host can
write an additional one to two hundred fifty six bytes in the
same manner as the first byte was written. Each successive
byte load cycle, started by the WE\ HIGH to LOW transition,
must begin within 100µs of the falling edge of the preceding
WE\. If a subsequent WE\ HIGH to LOW transition is not
detected within 100µs, the internal automatic programming cycle
will commence. There is no page write window limitation.
Effectively the page write window is infinitely wide, so long as
the host continues to access the device within the byte load
cycle time of 100µs.
WRITE
The AS28C010 provides the user two write operation
status bits. These can be used to optimize a system write cycle
time. The status bits are mapped onto the I/O bus as shown in
Figure 1.
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
EEPROM
AS28C010
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss................-0.5V to +7.0V1
Voltage on any pin Relative to Vss.......................-0.6V to +7.0V1
Storage Temperature ............................................-65°C to +150°C
Operating Temperature Range.............................-55oC to +125oC
Soldering Temperature Range...............................................260oC
Maximum Junction Temperature**....................................+150°C
Power Dissipation...................................................................1.0W
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TA < 125oC; Vcc = 5V +10%)
PARAMETER
1
Input High (Logic 1) Voltage
1
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
CONDITION
SYMBOL
VIH
VIL
ILI
ILO
VOH
VOL
VIN = V SS to VCC
VOUT =VSS to Vcc, CE\=V IH
IOH = -400 PA
IOL = 2.1 mA
MIN
2.0
-1.0
MAX
VCC + 1.0V
0.8
10
10
UNITS
V
V
P$
P$
V
V
2.4
0.4
Notes: 1) VIL min. and V IH max. are for reference only and are not tested.
PARAMETER
Power Supply Current:
Operating
SYM
-12
MAX
-15
-20
-25
IOUT =OmA, Vcc = 5.5V
Cycle=MIN
ICC3
100
100
80
80
mA
CE\=Vcc, Vcc = 5.5V
ICC1
500
500
500
500
PA
CE\=VIH, Vcc = 5.5V
ICC2
3
3
3
3
mA
CONDITIONS
UNITS NOTES
Power Supply Current:
Standby
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
EEPROM
AS28C010
Austin Semiconductor, Inc.
CAPACITANCE TA=+25oC, f= 1MHZ, VCC=5V
PARAMETER
SYMBOL
MAX
UNITS
Test Conditions
Input Capacitance
CIN(2)
10
pF
VIN=0V
Input / Output Capactiance
CI/O(2)
10
pF
VI/O=0V
POWER-UP TIMING
Symbol
tPUR (2)
Parameter
Power-up to Read Operation
Max.
100
Units
Ps
tPUW (2)
Power-up to Write Operation
5
ms
ENDURANCE AND DATA RETENTION
Parameter
Endurance
Endurance
Data Retention
Min.
10,000
100,000
100
Max.
MODE SELECTION
Units
Cycles Per Byte
Cycles Per Page
Years
A.C. CONDITIONS OF TEST
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
MODE
CE\
OE\
WE\
I/O
READ
VIL
VIL
VIH
DOUT
STANDBY
VIH
X
X
High-Z
WRITE
VIL
VIH
VIL
DIN
DESELECT
VIL
VIH
VIH
High-Z
X
X
VIH
---
X
VIL
X
---
VIL
VIL
VIH
Data Out
(I/O7)
WRITE
INHIBIT
0V to 3V
10ns
1.5V
DATA
POLLING
EQUIVALENT A.C. LOAD CURRENT
SYMBOL TABLE
Notes: (2) This parameter is periodically sampled and not 100% tested.
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
EEPROM
AS28C010
Austin Semiconductor, Inc.
AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(-55oC < TC < 125oC; Vcc = 5V +10%)
Test Conditions
z
z
z
z
Input Pulse Levels:
Input rise and fall times:
Output Load:
Reference levels for measuring timing:
Symbol
0.0V to 3.0V
< 20ns
1 TTL Gate +100pF (including scope and jig)
1.5V, 1.5V
Parameter
-12
-15
MIN MAX MIN MAX
-20
MIN MAX
-25
UNITS
MIN MAX
120
200
250
tRC
Read Cycle Time
tCE
Chip Enable Access Time
120
150
200
250
ns
ns
tAA
Address Access Time
120
150
200
250
ns
tOE
Output Enable Access Time
50
ns
tLZ(3)
CE\ LOW to Active Output
OE\ LOW to Active Output
(3)
tOLZ
tHZ(3)
tOHZ
CE\ HIGH to High Z Output
OE\ HIGH to High Z Output
tOH
Output Hold from Address Change
(3)
150
50
50
0
50
0
0
0
0
50
0
50
50
50
50
0
0
ns
0
50
50
0
0
50
0
ns
ns
ns
ns
Notes: 3) tLZ min., tOLZ min., and tOHZ are periodically sampled and not 100% tested. tHZ max. and tOHZ max. are measured,
with CL=5pF, from the point when CE\ or OE\ return HIGH (whichever occurs first) to the time when the
outputs are no longer driven.
AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
SYMBOL PARAMETER
tWC
Write Cycle Time
tAS
Address Setup Time
tAH
MIN
MAX
10
UNITS
ms
0
ns
50
0
0
ns
ns
ns
100
ns
tcs
tCH
Address Hold Time
Write Setup Time
Write Hold Time
tCW
CE\ Pulse Width
tOES
OE\ HIGH Setup Time
10
ns
tOEH
OE\ HIGH Hold Time
10
ns
tWP
WE\ Pulse Width
100
ns
tWPH
WE\ HIGH Recovery
100
ns
Ps
tDV
Data Valid
tDS
Data Setup
50
ns
tDH
Data Hold
0
tDW
Delay to Next Write
10
ns
Ps
tBLC
Byte Load Cycle
AS28C010
Rev. 1.5 5/06
1
0.20
100
Ps
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
EEPROM
AS28C010
Austin Semiconductor, Inc.
READ CYCLE
tRC
ADDRESS
tCE
CE\
tOE
OE\
VIH
WE\
tOHZ
tOLZ
tOH
tLE
HIGH Z
DATA I/O
tHZ
DATA VALID
DATA VALID
tAA
SOFTWARE DATA PROTECTION TIMING WAVEFORM (protection mode)
Vcc
CE\
WE\
5555
AA
55
tWC
{
Address
Data
tBLC
AAAA
or
2AAA
Write Address
Write Data
5555
A0
SOFTWARE DATA PROTECTION TIMING WAVEFORM (non-protection mode)
Vcc
tWC
Normal active
mode
CE\
WE\
Address
Data
AS28C010
Rev. 1.5 5/06
AAAA
or
2AAA
5555
AA 55
5555 5555
80
AA
AAAA
or
2AAA
55
5555
20
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
EEPROM
Austin Semiconductor, Inc.
AS28C010
WE\ CONTROLLED WRITE CYCLE
tWC
ADDRESS
tAS
tAH
tCH
tCS
CE\
OE\
tOES
tOEH
tWP
WE\
tWPH
tDV
DATA VALID
DATA IN
tDH
tDS
DATA OUT
HIGH Z
CE\ CONTROLLED WRITE CYCLE
tWC
ADDRESS
tAS
tAH
tCW
CE\
tWPH
tOES
OE\
WE\
tOEH
tCH
tCS
tDV
DATA VALID
DATA IN
tDS
DATA OUT
AS28C010
Rev. 1.5 5/06
tDH
HIGH Z
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
EEPROM
Austin Semiconductor, Inc.
AS28C010
Rev. 1.5 5/06
AS28C010
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
EEPROM
AS28C010
Austin Semiconductor, Inc.
PAGE WRITE CYCLE
OE\*
CE\
tWP
WE\
tBLC
tWPH
ADDRESS **
I/O
BYTE 0
BYTE 1
BYTE 2
BYTE n
BYTE n+1
LAST BYTE
BYTE n+2
* Between successive byte writes within a page write operation, OE\ can bee strobed LOW: e.g. this can be done with CE\ and WE\
HIGH to fetch data from another memory device within the system for the next write; or with WE\ HIGH and CE\ LOW effectively
performing a polling operation.
**: 1- For each successive write within the page write operation A8-A16 should be the same or writes to an unknown address could occur.
2– The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform
to either CE\ or WE\ controlled write cycle timing.
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
EEPROM
AS28C010
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #306 (Package Designator F)
SMD 5962-38267, Case Outline M
L
E
e
b
D
H
Top View
A1
A
c
D2
Q
E1
SYMBOL
A
A1
b
c
D
D2
E
E1
e
H
L
Q
SMD SPECIFICATIONS
MIN
MAX
0.097
0.123
0.090
0.110
0.015
0.019
0.003
0.007
0.810
0.830
0.745
0.755
0.425
0.445
0.330
0.356
0.045
0.055
1.000
1.100
0.290
0.310
0.026
0.037
NOTE: All drawings are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.
*All measurements are in inches.
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
EEPROM
Austin Semiconductor, Inc.
AS28C010
MECHANICAL DEFINITIONS*
Symbol
A
b
b1
b2
b3
c
c1
D
E
E2
E3
e
eA
Note
Min
--.014
.014
.045
.023
.008
.008
--.510
Max Note Symbol Min Max Note
.225
eA/2
.300 BSC
.026
2
L
.125 .200
8
.023
3
Q
.015 .070
9
.065
4
Q1
.045
5
S1
.005 --10
.018
2
S2
.005 --11
O
O
90 105
.015
3
a
1.680 6
aaa
--- .015
.620
6
bbb
--- .030
ccc
--- .010
M
--- .0015 2
N
12
.100 BSC
32
.600 BSC
1,14
NOTES:
1.
Index area: A notch or a pin one identification mark shall be located
adjacent to pin one and shall be located within the shaded area shown.
The manufacturer’s identification shall not be used as a pin one
identification mark.
2.
The maximum limits of lead dimensions b and c or M shall be measured
at the centroid of the finished lead surfaces, when solder dip or tin plate
lead finish is applied.
3.
Dimensions b1 and c1 apply to lead base metal only. Dimension M applies
to lead plating and finish thickness.
4.
The b2 minimum dimension of .045 inch (1.14 mm) was implemented 30
September 1992. Until that date, a minimum dimension of .038 (0.97 mm)
was acceptable. See 5.2.4
5.
Corner leads (1, N, N/2, and N/2+1) may be configured as shown in detail
A. For this configuration dimension b3 replaces dimension b2.
6.
This dimension allows for off-center lid, meniscus, and glass overrun.
8.
Pointed or rounded lead tips as shown in details B and C are preferred to
ease insertion, but are not mandatory.
9.
Dimension Q shall be measured from the seating plane to the base plane.
10. Measure dimension S1 at all four corners, see 5.2.5.
11. Measure dimension S2 from the top of the ceramic body to the nearest
metallization or lead
12. N is the maximum number of terminal positions.
14. See tables VI and VII for descriptive type designators.
*All measurements are in inches.
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
EEPROM
AS28C010
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: AS28C010CW-15/883C
EXAMPLE: AS28C010F-15/883C
Device Number
Package
Type
Speed
ns
Process
Device Number
Package
Type
Speed
ns
Process
AS28C010
CW
-12
/*
AS28C010
F
-12
/*
AS28C010
CW
-15
/*
AS28C010
F
-15
/*
AS28C010
AS28C010
CW
CW
-20
-25
/*
/*
AS28C010
AS28C010
F
F
-20
-25
/*
/*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
XT = Extended Temperature Range
883C = Full Military Class M Processing
AS28C010
Rev. 1.5 5/06
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
EEPROM
Austin Semiconductor, Inc.
AS28C010
ASI TO DSCC PART NUMBER
CROSS REFERENCE*
Package Designator CW
ASI Part #
SMD Part#
AS28C010CW-25
AS28C010CW-20
AS28C010CW-15
AS28C010CW-12
5962-3826701MXA
5962-3826703MXA
5962-3826705MXA
5962-3826707MXA
Package Designator F
ASI Part #
SMD Part#
AS28C010F-25
AS28C010F-20
AS28C010F-15
AS28C010F-12
5962-3826701MZA
5962-3826703MZA
5962-3826705MZA
5962-3826707MZA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
14