MOTOROLA MMBT3906LT1 General purpose transistor Datasheet

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by MMBT3906LT1/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
Motorola Preferred Device
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
1
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–40
Vdc
Collector – Base Voltage
VCBO
–40
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
IC
–200
mAdc
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance Junction to Ambient
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
– 55 to +150
°C
Collector Current — Continuous
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3906LT1 = 2A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
–40
—
–40
—
–5.0
—
—
–50
—
–50
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
Base Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
IBL
Collector Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
ICEX
Vdc
Vdc
Vdc
nAdc
nAdc
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
MMBT3906LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
60
80
100
60
30
—
—
300
—
—
—
—
–0.25
–0.4
–0.65
—
–0.85
–0.95
250
—
—
4.5
—
10
2.0
12
0.1
10
100
400
3.0
60
—
4.0
Unit
ON CHARACTERISTICS(3)
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
HFE
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
VBE(sat)
—
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Input Impedance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hie
Voltage Feedback Ratio
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hre
Small – Signal Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hfe
Output Admittance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hoe
Noise Figure
(IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
NF
MHz
pF
pF
kΩ
X 10– 4
—
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
3. Pulse Test: Pulse Width
(VCC = –3.0 Vdc, VBE = 0.5 Vdc,
IC = –10 mAdc, IB1 = –1.0 mAdc)
td
—
35
tr
—
35
(VCC = –3.0 Vdc, IC = –10 mAdc,
IB1 = IB2 = –1.0 mAdc)
ts
—
225
tf
—
75
v 300 ms, Duty Cycle v 2.0%.
ns
ns
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
+0.5 V
10 k
10 k
0
CS < 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
1N916
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
CS < 4 pF*
10.9 V
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
2
Figure 2. Storage and Fall Time
Equivalent Test Circuit
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT3906LT1
TYPICAL TRANSIENT CHARACTERISTICS
10
5000
7.0
3000
2000
Cobo
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
TJ = 25°C
TJ = 125°C
Cibo
3.0
2.0
VCC = 40 V
IC/IB = 10
1000
700
500
300
200
QT
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
100
70
50
20 30 40
1.0
2.0 3.0
Figure 3. Capacitance
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
200
Figure 4. Charge Data
500
500
IC/IB = 10
300
200
VCC = 40 V
IB1 = IB2
300
200
tr @ VCC = 3.0 V
15 V
30
20
t f , FALL TIME (ns)
TIME (ns)
IC/IB = 20
100
70
50
100
70
50
30
20
IC/IB = 10
40 V
10
7
5
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn – On Time
Figure 6. Fall Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
200
50 70 100
IC, COLLECTOR CURRENT (mA)
3
MMBT3906LT1
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
4.0
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5.0
IC = 0.5 mA
8
6
IC = 50 mA
4
IC = 100 mA
2
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
0
100
0.1
0.2
0.4
1.0 2.0
4.0
10
20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 7.
40
100
Figure 8.
h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
h fe , DC CURRENT GAIN
300
200
100
70
50
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5
5.0 7.0 10
0.1
0.2
Figure 9. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 )
h ie , INPUT IMPEDANCE (k OHMS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Impedance
4
5.0 7.0 10
Figure 10. Output Admittance
20
0.3
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 12. Voltage Feedback Ratio
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT3906LT1
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
– 55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
70
50
100
200
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 14. Collector Saturation Region
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
q V , TEMPERATURE COEFFICIENTS (mV/°C)
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0
2.0
50
5.0
10
20
IC, COLLECTOR CURRENT (mA)
100
200
Figure 15. “ON” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1.0
0.5
qVC FOR VCE(sat)
0
+25°C TO +125°C
– 55°C TO +25°C
– 0.5
+25°C TO +125°C
– 1.0
– 55°C TO +25°C
qVB FOR VBE(sat)
– 1.5
– 2.0
0
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
180 200
Figure 16. Temperature Coefficients
5
MMBT3906LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T J(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA . Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
6
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT3906LT1
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
B S
1
V
2
G
C
D
H
K
J
CASE 318–08
SOT–23 (TO–236AB)
ISSUE AE
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
7
MMBT3906LT1
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8
◊
*MMBT3906LT1/D*
Motorola Small–Signal Transistors, FETs and Diodes
Device Data
MMBT3906LT1/D
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