DMN4031SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary RDS(ON) max ID max TA = +25°C (Note 5) • • Low Input/Output Leakage 31mΩ @ VGS = 10V 7.0A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 50mΩ @ VGS = 4.5V 5.6A • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability V(BR)DSS 40V Features and Benefits Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it • Motor control • Backlighting • Power Management Functions • DC-DC Converters Case: SO-8 • ideal for high efficiency power management applications. • Low On-Resistance Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections Indicator: See diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 • Weight: 0.072 grams (approximate) SO-8 D1 S2 D2 G2 D2 S1 D1 G1 D1 Top View Internal Schematic Top View D2 G1 G2 S1 S2 N-channel MOSFET N-channel MOSFET Ordering Information (Note 4) Part Number DMN4031SSD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 N4031SD N4031SD YY WW YY WW 1 4 Chengdu A/T Site DMN4031SSD Document number: DS35410 Rev. 4 - 2 1 = Manufacturer’s Marking N4031SD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 4 Shanghai A/T Site 1 of 6 www.diodes.com February 2014 © Diodes Incorporated DMN4031SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 4.5V Steady State Continuous Drain Current (Note 6) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value 40 ±20 5.2 4.1 ID 4.3 3.4 A ID 7.0 5.6 A A 5.8 4.7 20 ID Pulsed Drain Current (Note 7) Units V V IDM A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Operating and Storage Temperature Range Symbol PD RθJA PD RθJA TJ, TSTG Value 1.42 88 2.6 48 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage On-state drain current Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 10mA VDS = 40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) ID(ON) RDS (ON) 3.0 — 31 50 — 1.0 mΩ |Yfs| VSD 2.4 — 19 44 11 0.74 V A Static Drain-Source On-Resistance 1.6 20 — — — — VDS = VGS, ID = 250μA VGS = 10V, VDS = 5A VGS = 10V, ID = 6A VGS = 4.5V, ID = 5A VDS = 5V, ID = 6A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd TD(on) Tr TD(off) Tf — — — — — — — — — — — — 945 69 58 1.45 8.4 18.6 3.3 2.2 6.4 9.7 19.8 3.1 — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: S V Test Condition VDS = 20V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 20V, ID = 12A VGS = 10V, VDS = 20V, RL= 1.6Ω, RG= 3Ω 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. The value in any given application depends on user’s specific board design 6. Device mounted on 1” x 1” FR-4PCB with high coverage 1 oz. Copper, single sided. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect 9. Guaranteed by design. No subject to production testing. DMN4031SSD Document number: DS35410 Rev. 4 - 2 2 of 6 www.diodes.com February 2014 © Diodes Incorporated 30 25 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 VGS = 10V 20 15 VGS = 4.5V 10 5 20 15 10 TA = 150°C TA = 125°C 0 0.5 1.0 1.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics TA = -55°C 0 2.0 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN4031SSD Document number: DS35410 Rev. 4 - 2 T A = 85°C TA = 25°C VGS = 4.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) 0 VDS = 5.0V 5 VGS = 3.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) ADVANCE INFORMATION DMN4031SSD 3 of 6 www.diodes.com 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 5 0.06 VGS = 4.5V 0.05 0.04 TA = 150°C TA = 125°C 0.03 TA = 85°C TA = 25°C 0.02 TA = -55° C 0.01 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 0.05 0.04 0.03 VGS = 10V ID = 10A 0.02 VGS = 10V ID = 5 A 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature February 2014 © Diodes Incorporated DMN4031SSD 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 20 2.5 2.0 1.5 1.0 0.5 0 -50 12 8 4 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 10,000 IDSS, LEAKAGE CURRENT (µA) CT, JUNCTION CAPACITANCE (pF) T A = 150°C 1,000 Ciss 100 Coss Crss 100 TA = 125°C 10 TA = 85°C TA = 25°C f = 1MHz 10 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 1 40 10 20 30 VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 0 100 10 RDS(on) Limited f = 1MHz 8 10 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION 3.0 6 4 PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms PW = 1ms PW = 100µs PW = 10µs 0.01 2 0 DC 1 0 2 4 6 8 10 12 14 16 18 20 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN4031SSD Document number: DS35410 Rev. 4 - 2 0.001 0.1 4 of 6 www.diodes.com 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 February 2014 © Diodes Incorporated DMN4031SSD Package Outline Dimensions 0.254 ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMN4031SSD Document number: DS35410 Rev. 4 - 2 5 of 6 www.diodes.com February 2014 © Diodes Incorporated DMN4031SSD ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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