Diodes DMN4031SSD-13 Low on-resistance Datasheet

DMN4031SSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
Product Summary
RDS(ON) max
ID max
TA = +25°C (Note 5)
•
•
Low Input/Output Leakage
31mΩ @ VGS = 10V
7.0A
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
50mΩ @ VGS = 4.5V
5.6A
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
V(BR)DSS
40V
Features and Benefits
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
•
Motor control
•
Backlighting
•
Power Management Functions
•
DC-DC Converters
Case: SO-8
•
ideal for high efficiency power management applications.
•
Low On-Resistance
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections Indicator: See diagram
•
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
•
Weight: 0.072 grams (approximate)
SO-8
D1
S2
D2
G2
D2
S1
D1
G1
D1
Top View
Internal Schematic
Top View
D2
G1
G2
S1
S2
N-channel MOSFET
N-channel MOSFET
Ordering Information (Note 4)
Part Number
DMN4031SSD-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
N4031SD
N4031SD
YY WW
YY WW
1
4
Chengdu A/T Site
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
1
= Manufacturer’s Marking
N4031SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
4
Shanghai A/T Site
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DMN4031SSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
VGS = 10V
Steady
State
Continuous Drain Current (Note 5)
VGS = 4.5V
Steady
State
Continuous Drain Current (Note 6)
VGS = 10V
Steady
State
Continuous Drain Current (Note 6)
VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
ID
Value
40
±20
5.2
4.1
ID
4.3
3.4
A
ID
7.0
5.6
A
A
5.8
4.7
20
ID
Pulsed Drain Current (Note 7)
Units
V
V
IDM
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
1.42
88
2.6
48
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
On-state drain current
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
40
—
—
—
—
—
—
1
±100
V
μA
nA
VGS = 0V, ID = 10mA
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
ID(ON)
RDS (ON)
3.0
—
31
50
—
1.0
mΩ
|Yfs|
VSD
2.4
—
19
44
11
0.74
V
A
Static Drain-Source On-Resistance
1.6
20
—
—
—
—
VDS = VGS, ID = 250μA
VGS = 10V, VDS = 5A
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
VDS = 5V, ID = 6A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
TD(on)
Tr
TD(off)
Tf
—
—
—
—
—
—
—
—
—
—
—
—
945
69
58
1.45
8.4
18.6
3.3
2.2
6.4
9.7
19.8
3.1
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
S
V
Test Condition
VDS = 20V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 20V,
ID = 12A
VGS = 10V, VDS = 20V,
RL= 1.6Ω, RG= 3Ω
5. Device mounted on FR-4 PCB, with minimum recommended pad layout. The value in any given application depends on user’s specific board design
6. Device mounted on 1” x 1” FR-4PCB with high coverage 1 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. No subject to production testing.
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
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30
25
25
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
30
VGS = 10V
20
15
VGS = 4.5V
10
5
20
15
10
TA = 150°C
TA = 125°C
0
0.5
1.0
1.5
VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
TA = -55°C
0
2.0
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
5
10
15
20
25
ID, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.6
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
T A = 85°C
TA = 25°C
VGS = 4.0V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω)
RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω)
0
VDS = 5.0V
5
VGS = 3.5V
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Normalized)
ADVANCE INFORMATION
DMN4031SSD
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1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
5
0.06
VGS = 4.5V
0.05
0.04
TA = 150°C
TA = 125°C
0.03
TA = 85°C
TA = 25°C
0.02
TA = -55° C
0.01
0
0
5
10
15
20
25
ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
30
0.06
0.05
0.04
0.03
VGS = 10V
ID = 10A
0.02
VGS = 10V
ID = 5 A
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
February 2014
© Diodes Incorporated
DMN4031SSD
16
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE(V)
20
2.5
2.0
1.5
1.0
0.5
0
-50
12
8
4
0
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
1,000
10,000
IDSS, LEAKAGE CURRENT (µA)
CT, JUNCTION CAPACITANCE (pF)
T A = 150°C
1,000
Ciss
100
Coss
Crss
100
TA = 125°C
10
TA = 85°C
TA = 25°C
f = 1MHz
10
0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
1
40
10
20
30
VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
0
100
10
RDS(on)
Limited
f = 1MHz
8
10
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
ADVANCE INFORMATION
3.0
6
4
PW = 10s
PW = 1s
0.1
PW = 100ms
PW = 10ms
PW = 1ms
PW = 100µs
PW = 10µs
0.01
2
0
DC
1
0
2
4
6
8 10 12 14 16 18 20
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
0.001
0.1
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1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
February 2014
© Diodes Incorporated
DMN4031SSD
Package Outline Dimensions
0.254
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1 E
A1
L
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Gauge Plane
Seating Plane
Detail ‘A’
h
7°~9°
45°
Detail ‘A’
A2 A A3
b
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
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DMN4031SSD
ADVANCE INFORMATION
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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DMN4031SSD
Document number: DS35410 Rev. 4 - 2
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