BD533 BD535 BD537 BD534 BD536 BD538 ® COMPLEMENTARY SILICON POWER TRANSISTORS ■ BD534, BD535, BD536, BD537 AND BD538 ARE STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are BD534, BD536, and BD538 respectively. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD533 BD535 BD537 PNP BD534 BD536 BD538 V CBO Collector-Base Voltage (I E = 0) 45 60 80 V V CES Collector-Emitter Voltage (V BE = 0) 45 60 80 V V CEO Collector-Emitter Voltage (I B = 0) 45 60 80 V V EBO Emitter-Base Voltage (I C = 0) 5 V I C, I E Collector and Emitter Current 8 A IB P tot T stg Tj Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature 1 A 50 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. February 2003 1/4 BD533 BD534 BD535 DB536 BD537 BD538 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 2.5 70 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CBO Collector Cut-off Current (I E = 0) Parameter for BD533/534 for BD535/536 for BD537/538 V CB = 45 V V CB = 60 V V CB = 80 V 100 100 100 µA µA µA I CES Collector Cut-off Current (V BE = 0) for BD533/534 for BD535/536 for BD537/538 V CE = 45 V V CE = 60 V V CE = 80 V 100 100 100 µA µA µA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Test Conditions I C = 100 mA for BD533/534 for BD535/536 for BD537/538 Collector-Emitter Saturation Voltage IC = 2 A IC = 6 A I B = 0.2 A I B = 0.6 A V BE ∗ Base-Emitter Voltage IC = 2 A h FE ∗ DC Current Gain I C = 10 mA V CE(sat) ∗ I C = 500 mA IC = 2 A fT Transition frequency I C = 500 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. 2/4 Min. Typ. V V V 45 60 80 V CE = 2 V V CE = 5 V for BD533/534 for BD535/536 for BD537/538 VCE = 2 V V CE = 2 V for BD533/534 for BD535/536 for BD537/538 VCE = 1 V 0.8 V V 1.5 V 0.8 20 20 15 40 25 25 15 3 12 MHz BD533 BD534 BD535 DB536 BD537 BD538 TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 3/4 BD533 BD534 BD535 DB536 BD537 BD538 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4