BC856-8 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP Features ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications ) SOT- 23 Marking: ● BC856A=3A;BC856B=3B; ● BC857A=3E;BC857B=3F;BC857C=3G; ● BC858A=3J;BC858B=3K;BC858C=3L; C B Item Collector-Base Voltage Collector-Emitter Voltage BC856 BC857 BC858 BC856 BC857 BC858 Emitter-Base Voltage Symbol Unit VCBO V Conditions E Value -80 -50 -30 VCEO V -65 -45 -30 VEBO V -5 Collector Current IC A -0.1 Total Device Dissipation PC W 0.2 RΘJA ℃/W 625 Junction Temperature Tj ℃ 150 Storage Temperature TSTG ℃ -55 to +150 Thermal Resistance From Junction To Ambient High Diode Semiconductor 1 Electrical Characteristics (TA=25℃ unless otherwise noted) Symbol Parameter Collector-base breakdown voltage T est conditions BC856 BC857 IC= -10μA, IE=0 IC= -10mA, IB=0 BC856 BC857 ICBO VCB= -45 V , IE=0 VCE= -40 V , IB=0 VEB= -5 V , IC=0 BC856A, 857A,858A BC856B, 857B,858B V -0.1 μA -0.1 μA -0.1 μA VCE= -25 V , IB=0 IEBO DC current gain -5 VCE= -60 V , IB=0 ICEO BC858 Emitter cut-off current IE= -1μA, IC=0 VCB= -25 V , IE=0 BC856 BC857 V VCB= -70 V , IE=0 BC858 Collector cut-off current -45 -30 VEBO Collector cut-off current V -50 -65 VCEO BC858 Emitter-base breakdown voltage Unit -30 BC856 BC857 Max -80 VCBO BC858 Collector-emitter breakdown voltage Min hFE VCE= -5V,IC= -2mA BC857C,BC858C 125 250 220 475 420 800 Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB= -5 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -100mA, IB= -5mA -1.1 V Transition frequency fT Collector capacitance Cob VCE= -5 V, IC= -10mA f=100MHz VCB=-10V, f=1MHz High Diode Semiconductor 100 MHz 4.5 pF 2 Typical Characteristics Static Characteristic -8 COMMON EMITTER Ta=25℃ IC -24uA DC CURRENT GAIN -21uA -18uA -4 -15uA -12uA -9uA -2 —— IC Ta=100℃ -27uA -6 hFE (mA) -30uA COLLECTOR CURRENT hFE 1000 Ta=25℃ 100 -6uA COMMON EMITTER VCE= -5V IB=-3uA -0 -0 -2 -4 -6 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1 —— VCE 10 -0.1 -8 -1 (V) -10 COLLECTOR CURRENT IC VBEsat —— -2 IC -100 (mA) IC -1 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ -0.1 Ta=100℃ Ta=25℃ Ta=100℃ β=20 β=20 -0.01 -0.1 -1 -10 COLLECTOR CURRENT IC -100 (mA) -10 COLLECTOR CURRENT —— VBE fT IC -100 (mA) IC —— (MHz) Ta=100℃ TRANSITION FREQUENCY fT -10 Ta=25℃ -1 COMMON EMITTER VCE=-5V -0.1 -0.0 -1 500 (mA) IC COLLECTOR CURRENT IC -0.1 -0.1 -100 -0.3 -0.6 -0.9 100 COMMON EMITTER VCE=-5V Ta=25℃ 10 -0.1 -1.2 -1 BASE-EMMITER VOLTAGE VBE (V) Cob/ Cib -10 COLLECTOR CURRENT —— VCB/ VEB PC 250 30 —— IC -100 (mA) Ta f=1MHz IE=0/IC=0 COLLECTOR POWER DISSIPATION PC (mW) 10 C (pF) Ta=25 ℃ Cib CAPACITANCE Cob 1 -0.1 -1 REVERSE VOLTAGE -10 VR (V) -20 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE High Diode Semiconductor 100 Ta 125 150 (℃ ) 3 SOT-23 Package Outline Dimensions SOT-23 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 4 Reel Taping Specifications For Surface Mount Devices-SOT-23 30 High Diode Semiconductor 5