HAT2141H Silicon N Channel Power MOS FET Power Switching REJ03G1193-0700 (Previous: ADE-208-1582E) Rev.7.00 Sep 07, 2005 Features • • • • Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 22 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 12 1, 2, 3 4 5 34 S S S 1 2 3 Rev.7.00 Sep 07, 2005 page 1 of 7 Source Gate Drain HAT2141H Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Symbol VDSS Value 100 Unit V VGSS ID ±20 15 V A 60 15 A A ID (pulse) IDR Note 1 Note 3 Avalanche current Avalanche energy IAP Note 3 EAR 15 22.5 A mJ Channel dissipation Channel temperature Pch Tch Note 2 20 150 W °C –55 to +150 °C Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25 °C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Tstg Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit V (BR) DSS V (BR) GSS 100 ±20 — — — — V V ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 IGSS IDSS — — — — ±10 1 µA µA VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS (off) RDS (on) 2.0 — — 22 3.5 27.5 V mΩ VDS = 10 V, ID = 1 mA Note 4 ID = 7.5 A, VGS = 10 V Forward transfer admittance RDS (on) |yfs| — 15 23.5 25 32 — mΩ S ID = 7.5 A, VGS = 7 V Note 4 ID = 7.5 A, VDS = 10 V Input capacitance Output capacitance Ciss Coss — — 3200 255 — — pF pF Reverse transfer capacitance Total gate charge Crss Qg — — 125 46 — — pF nC VDS = 10 V VGS = 0 f = 1 MHz Gate to source charge Gate to drain charge Qgs Qgd — — 11 10 — — nC nC Turn-on delay time Rise time td (on) tr — — 22 13 — — ns ns Turn-off delay time Fall time td (off) tf — — 70 10 — — ns ns Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr — — 0.82 50 1.07 — V ns Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Note: 4. Pulse test Rev.7.00 Sep 07, 2005 page 2 of 7 Test Conditions Note 4 VDD = 50 V VGS = 10 V ID = 15 A VGS = 10 V, ID = 7.5 A VDD ≅ 30 V RL = 4 Ω Rg = 4.7 Ω IF = 15 A, VGS = 0 IF = 15 A, VGS = 0 diF/dt = 100 A/µs Note 4 HAT2141H Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 ID (A) 30 Drain Current Channel Dissipation Pch (W) 40 20 10 50 100 150 Case Temperature 10 PW 200 4.0 V 16 12 8 3.7 V 4 VGS = 3.5 V Drain Current Drain Current VDS (V) VDS = 10 V Pulse Test 8 25°C Tc = 75°C 4 –25°C 0 0 0 2 4 6 Drain to Source Voltage 10 8 VDS (V) Pulse Test 600 400 ID = 10 A 200 5A 2A 0 0 4 8 12 Gate to Source Voltage Rev.7.00 Sep 07, 2005 page 3 of 7 16 20 VGS (V) 2 4 6 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) 800 0 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage VDS (on) (mV) 30 100 300 1000 20 12 Drain to Source Voltage 10 Typical Transfer Characteristics ID (A) ID (A) 4.5 V 16 3 Drain to Source Voltage Pulse Test 10 V µs 0 this area is limited by RDS (on) 0.1 Typical Output Characteristics 20 10 µs m =1 s Op 0 m s er (1 ati sh on ot (T c= ) 25 Operation in °C ) 1 Tc (°C) 1 DC 10 Ta = 25°C 0.01 0.1 0.3 1 0 0 100 1000 500 Pulse Test 200 100 50 VGS = 7 V 20 10 V 10 5 2 1 0.1 0.2 0.5 1 Drain Current 2 ID (A) 5 10 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) HAT2141H 100 Pulse Test 80 60 ID = 2 A, 5 A, 10 A 40 VGS = 7 V 2 A, 5 A, 10 A 20 10 V 0 –25 0 25 50 75 100 125 150 Case Temperature Tc 100 30 Tc = –25°C 10 75°C 3 25°C 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 10 30 100 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 3 Typical Capacitance vs. Drain to Source Voltage 100 50 20 di / dt = 100 A / µs VGS = 0, Ta = 25°C 10 0.1 0.3 1 3 10 Reverse Drain Current 30 Ciss 3000 1000 300 Coss 100 Crss 30 10 100 VGS = 0 f = 1 MHz 0 10 16 VDD = 100 V 50 V 25 V 120 VGS VDS 12 8 80 VDD = 100 V 50 V 25 V 40 4 0 0 20 40 Gate Charge Rev.7.00 Sep 07, 2005 page 4 of 7 60 80 Qg (nc) 40 50 0 100 1000 500 Switching Time t (ns) 160 VGS (V) 20 ID = 15 A 30 Switching Characteristics Gate to Source Voltage 200 20 Drain to Source Voltage VDS (V) IDR (A) Dynamic Input Characteristics VDS (V) 1 Drain Current ID (A) (°C) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage 0.3 200 td(off) 100 50 td(on) 20 tr 10 tf 5 2 VGS = 10 V, VDS = 10 V Rg = 4.7 µs, duty ≤ 1 % 1 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 HAT2141H Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IF (A) 20 16 VGS = 0 10 V 12 5V 8 4 Pulse Test 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 50 IAP = 15 A VDD = 50 V duty < 0.1 % Rg ≥ 50 Ω 40 30 20 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) VSDF (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 6.25°C/W, Tc = 25°C 0.1 0.05 D= PDM 0.02 1 0.0 0.03 1s t ho 0.01 10 µ pu lse PW T PW T 100 µ 10 m 1m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit VDS Monitor Avalanche Waveform L EAR = 1 • L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor Rg V(BR)DSS IAP D.U.T VDD VDS ID Vin 15 V 50 Ω 0 Rev.7.00 Sep 07, 2005 page 5 of 7 VDD HAT2141H Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. Rg Vin Vout Vin 10 V VDS = 30 V 10% 10% 90% td(on) Rev.7.00 Sep 07, 2005 page 6 of 7 10% RL tr 90% td(off) tf HAT2141H Package Dimensions JEITA Package Code RENESAS Code SC-100 PTZZ0005DA-A Package Name MASS[Typ.] LFPAK Unit: mm 0.080g 4.9 5.3 Max 4.0 ± 0.2 +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 0° – 8° +0.25 +0.05 0.20 –0.03 0.6 –0.20 1.3 Max 1 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name Quantity Shipping Container HAT2141H-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.7.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0