BUZ 11 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 11 A 50 V 26 A 0.055 Ω TO-220 AB C67078-S1301-A3 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C Values Unit A 26 IDpuls Pulsed drain current TC = 25 °C 104 Avalanche current,limited by Tjmax IAR 30 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 1.9 mJ EAS ID = 30 A, VDD = 25 V, RGS = 25 Ω L = 15.6 µH, Tj = 25 °C 14 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 75 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 1.67 Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 150 / 56 1 07/96 BUZ 11 A Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 50 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 50 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 19 A Semiconductor Group nA - 2 0.04 0.055 07/96 BUZ 11 A Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 19 A Input capacitance 10 pF - 1000 1350 - 450 680 - 165 250 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 17 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 15 25 - 55 85 - 120 160 - 80 110 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 11 A Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 104 V 1.6 1.8 trr ns - 80 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 26 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 60 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 0.1 - 07/96 BUZ 11 A Not for new design Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 28 80 A W Ptot 24 ID 60 22 20 18 50 16 14 40 12 30 10 8 20 6 4 10 2 0 0 0 20 40 60 80 100 120 °C 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 3 K/W A ID ZthJC 10 0 t = 7.5µs p 10 µs 10 2 /ID = VD S 100 µs ) on S( D R 10 -1 1 ms D = 0.50 0.20 10 1 0.10 10 ms 0.05 10 -2 0.02 0.01 single pulse 10 DC 0 10 0 10 1 V 10 10 2 10 VDS Semiconductor Group -3 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 11 A Not for new design Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 60 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.17 Ptot = 75W l A kj h i VGS [V] a 4.0 50 ID a Ω g f 45 40 e 35 30 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 d h 25 20 c 15 8.0 j 9.0 k 10.0 l 20.0 c d e 0.14 RDS (on) 0.12 0.10 0.08 7.5 i b f 0.06 h j k 0.04 g i b 10 0.02 5 a 0 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.00 0.0 1.0 2.0 3.0 4.0 V 6.0 0 10 20 30 40 VDS A Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max ID 65 26 A S 55 22 gfs 50 20 45 18 40 16 35 14 30 12 25 10 20 8 15 6 10 4 5 2 0 0 55 ID 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0 10 20 30 40 A ID 07/96 60 BUZ 11 A Not for new design Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 19 A, VGS = 10 V 4.6 0.18 V Ω 98% 4.0 VGS(th) RDS (on) 0.14 3.6 typ 3.2 0.12 2.8 0.10 2.4 0.08 98% 0.06 typ 2% 2.0 1.6 1.2 0.04 0.8 0.02 0.4 0.00 0.0 -60 -20 20 60 100 °C -60 160 -20 20 60 100 °C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 3 nF A C IF 10 0 10 2 Ciss Coss Crss 10 -1 10 1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 11 A Not for new design Avalanche energy EAS = ƒ(Tj ) parameter: ID = 30 A, VDD = 25 V RGS = 25 Ω, L = 15.6 µH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 56 A 16 15 mJ V EAS 12 VGS 11 12 10 0,2 VDS max 10 9 8 0,8 VDS max 8 7 6 6 5 4 4 3 2 2 1 0 20 0 40 60 80 100 120 °C 160 Tj 0 5 10 15 20 25 30 35 40 nC Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 60 V V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 50 BUZ 11 A Not for new design Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96