Vishay ILD610 Optocoupler, phototransistor output, dual channel Datasheet

ILD610
VISHAY
Vishay Semiconductors
Optocoupler, Phototransistor Output, Dual Channel
Features
•
•
•
•
•
•
Dual Version of SFH610 Series
Isolation Test Voltage, 5300 VRMS
VCEsat 0.25 ( ≤ 0.4) V at IF = 10 mA, IC = 2.5 mA
VCEO = 70 V
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A 1
8 E
C 2
7 C
A 3
6 E
C 4
5 C
e3
Pb
Pb-free
i179045
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
• BSI IEC60950 IEC60065
Description
The ILD610 series is a dual channel optocoupler
series for high density applications. Each channel
consists of an optically coupled pair with a Gallium
Arsenide infrared LED and silicon NPN phototransistor. Signal information, including a DC level, can be
transmitted by the device while maintaining a high
degree of electrical isolation between input and out-
put. The ILD610 series is the dual version of SFH610
series and uses a repetitive pin-out configuration
instead of the more common alternating pin-out used
in most dual couplers.
Order Information
Part
Remarks
ILD610-1
CTR 40 - 80 %, DIP-8
ILD610-2
CTR 63 - 125 %, DIP-8
ILD610-3
CTR 100 - 200 %, DIP-8
ILD610-4
CTR 160 - 320 %, DIP-8
ILD610-2X007
CTR 63 - 125 %, SMD-8 (option 7)
ILD610-3X006
CTR 100 - 200 %, DIP-8 400 mil (option 6)
ILD610-3X009
CTR 100 - 200 %, SMD-8 (option 9)
ILD610-4X009
CTR 160 - 320 %, SMD-8 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Reverse voltage
Surge forward current
Power dissipation
t ≤ 10 ms
Symbol
Value
Unit
VR
6.0
V
IFSM
1.5
A
Pdiss
100
mW
1.3
mW/°C
60
mA
Derate linearly from 25 °C
DC forward current
Document Number 83651
Rev. 1.6, 26-Oct-04
IF
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1
ILD610
VISHAY
Vishay Semiconductors
Output
Parameter
Test condition
Symbol
Value
VCE
70
V
IC
50
mA
IC
100
mA
Pdiss
150
mW
2.0
mW/°C
Collector-emitter voltage
Collector current
t ≤ 1.0 ms
Power dissipation
Derate linearly from 25 °C
Unit
Coupler
Parameter
Isolation test voltage
Isolation resistance
Test condition
Symbol
Value
Unit
VISO
5300
VRMS
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V,Tamb = 100 °C
RIO
≥ 10
Ω
t = 1.0 sec.
11
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Tj
100
°C
10
sec.
Junction temperature
Lead soldering time at 260 °C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Typ.
Max
Forward voltage
Parameter
IF = 60 mA
Test condition
Symbol
VF
Min
1.25
1.65
Unit
V
Reverse current
VR = 6.0 V
IR
0.01
10
µA
Capacitance
VR = 0 V, f = 1.0 MHz
CO
25
pF
Output
Parameter
Test condition
Part
Symbol
Min
Typ.
BVCEO
70
90
BVCEO
6.0
7.0
Max
Unit
Collector-emitter breakdown
voltage
IC = 10 mA, IE = 10 µA
Collector-emitter dark current
VCE = 10 V
ICEO
2.0
Collector-emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
CCE
7.0
Collector-emitter leakage
current
VCE = 10 V
ILD610-1
ICEO
2.0
50
nA
ILD610-2
ICEO
2.0
50
nA
ILD610-3
ICEO
5.0
100
nA
ILD610-4
ICEO
5.0
100
nA
V
V
50
nA
pF
Coupler
Parameter
Collector-emitter saturation
voltage
Coupling capacitance
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2
Test condition
IF = 10 mA, IC = 2.5 mA
Symbol
Typ.
Max
Unit
VCEsat
Min
0.25
0.40
V
CC
0.35
pF
Document Number 83651
Rev. 1.6, 26-Oct-04
ILD610
VISHAY
Vishay Semiconductors
Current Transfer Ratio
Parameter
Test condition
IF = 10 mA, VCE = 5.0 V
CTR1)
IF = 1.0 mA, VCE = 5.0 V
1)
Part
Symbol
Min
ILD610-1
CTR
40
Typ.
Max
80
Unit
%
ILD610-2
CTR
63
125
%
ILD610-3
CTR
100
200
%
ILD610-4
CTR
160
320
%
ILD610-1
CTR
13
%
ILD610-2
CTR
22
%
ILD610-3
CTR
34
%
ILD610-4
CTR
56
%
Min
CTR will match within a ratio of 1.7:1
Switching Characteristics
Non-saturated
Parameter
Rise time
Fall time
Turn-on time
Turn-off time
Test condition
VCC = 5.0, RL = 75 Ω, IF = 10 mA
VCC = 5.0, RL = 75 Ω, IF = 10 mA
VCC = 5.0, RL = 75 Ω, IF = 10 mA
VCC = 5.0, RL = 75 Ω, IF = 10 mA
Part
Symbol
ILD610-1
tr
Typ.
2.0
Max
Unit
µ
ILD610-2
tr
2.5
µ
ILD610-3
tr
2.9
µ
ILD610-4
tr
3.3
µ
ILD610-1
tf
2.0
µ
ILD610-2
tf
2.6
µ
ILD610-3
tf
3.1
µ
ILD610-4
tf
3.5
µ
ILD610-1
ton
3.0
µ
ILD610-2
ton
3.2
µ
ILD610-3
ton
3.6
µ
ILD610-4
ton
2.3
µ
ILD610-1
toff
2.9
µ
ILD610-2
toff
3.4
µ
ILD610-3
toff
3.7
µ
ILD610-4
toff
4.1
µ
Saturated
Parameter
Rise time
Fall time
Turn-on time
Test condition
VCC = 5.0, RL = 1.0 kΩ, IF = 5.0 mA
VCC = 5.0, RL = 1.0 kΩ, IF = 5.0 mA
VCC = 5.0, RL = 1.0 kΩ, IF = 5.0 mA
Document Number 83651
Rev. 1.6, 26-Oct-04
Part
Symbol
ILD610-1
tr
Min
Typ.
2.0
Max
Unit
µ
ILD610-2
tr
2.8
µ
ILD610-3
tr
3.3
µ
µ
ILD610-4
tr
4.6
ILD610-1
tf
11
µ
ILD610-2
tf
2.6
µ
ILD610-3
tf
3.1
µ
ILD610-4
tf
15
µ
ILD610-1
ton
3.0
µ
ILD610-2
ton
4.3
µ
ILD610-3
ton
4.6
µ
ILD610-4
ton
6.0
µ
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ILD610
VISHAY
Vishay Semiconductors
Parameter
Turn-off time
Test condition
VCC = 5.0, RL = 1.0 kΩ, IF = 5.0 mA
Part
Symbol
ILD610-1
toff
Min
Typ.
18
Max
Unit
µ
ILD610-2
toff
2.9
µ
ILD610-3
toff
3.4
µ
ILD610-4
toff
25
µ
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.5
1. 3
Ta = –55°C
NCTR - Normalized CTR
VF - Forward Voltage - V
1.4
1.2
Ta = 25°C
1.1
1.0
0.9
Ta = 85°C
0.8
1.0
TA= 50°C
0.5
NCTR(SAT)
NCTR
0.0
0.7
.1
1
10
IF - Forward Current - mA
.1
100
1
10
100
I F - LED Current - mA
iilct6_01
iilct6_03
Figure 1. Forward Voltage vs. Forward Current
1.5
1.5
Normalized to:
VCE = 10 V, IF = 10 mA
TA= 25°C
CTRce(sat) VCE = 0.4 V
1.0
Figure 3. Normalized Non-Saturated and Saturated CTR vs. LED
Current
NCTR - Normalized CTR
NCTR - Normalized CTR
Normalized to:
VCE = 10 V, IF = 10 mA, TA= 25°C
ˇ
CTRce(sat) VCE = 0.4 V
0.5
NCTR(SAT)
NCTR
0.0
Normalized to:
VCE = 10 V, IF = 10 mA
TA= 25°C
1.0
CTRce(sat) VCE = 0.4 V
TA= 70°C
0.5
NCTR(SAT)
NCTR
0.0
.1
1
10
100
.1
I F - LED Current - mA
1
10
100
I F - LED Current - mA
iilct6_02
iilct6_04
Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Figure 4. Normalized Non-Saturated and Saturated CTR vs. LED
Current
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Document Number 83651
Rev. 1.6, 26-Oct-04
ILD610
VISHAY
Vishay Semiconductors
1000
1.0
TA = 85°C
0.5
NCTR(SAT)
NCTR
0.0
.1
1
10
IF - LED Current - mA
2.5
Ta = 25°C, IF = 10 mA
Vcc = 5 V, Vth = 1.5 V
tpHL
2.0
100
10
1.5
tpLH
1
100
tpHL - Propagation Delay µs
Normalized to:
V CE = 10 V, I F = 10 mA, TA = 25°C
CTRce(sat) VCE = 0.4 V
tpLH - Propagation Delay µs
NCTR - Normalized CTR
1.5
1.0
.1
1
10
100
RL - Collector Load Resistor - kΩ
iilct6_05
iilct6_08
Figure 5. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Figure 8. Propagation Delay vs. Collector Load Resistor
ICE - Collector Current - mA
35
30
IF
25
50°C
20
15
70°C
25°C
VO
85°C
10
tD
tR
tPLH
5
VTH=1.5 V
tPHL
0
0
10
20
40
30
50
60
tS
tF
iild610_09
IF - LED Current - mA
iilct6_06
Figure 9. Switching Timing
Figure 6. Collector-Emitter Current vs. Temperature and LED
Current
ICEO - Collector-Emitter - nA
10 5
10 4
VCC =5 V
10 3
F=10 KHz
DF=50%
10 2
Vce = 10 V
10 1
IF =10 mA
Typical
10 0
RL
VO
10 -1
10 -2
-20
0
20
40
60
80
100
iild610_10
TA - Ambient Temperature - °C
iilct6_07
Figure 7. Collector-Emitter Leakage Current vs.Temp.
Document Number 83651
Rev. 1.6, 26-Oct-04
Figure 10. Non-saturated Switching Schematic
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ILD610
VISHAY
Vishay Semiconductors
Figure 11. Saturated Switching Time Test Waveform
Input
toff
ton
tpdoff
tpdon
Output
tr
td
tr
ts
10%
10%
50%
50%
90%
90%
iild610_11
Package Dimensions in Inches (mm)
pin one ID
4
3
2
1
5
6
7
8
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.031 (0.79)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
i178006
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6
10°
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
3°–9°
.008 (.20)
.012 (.30)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Document Number 83651
Rev. 1.6, 26-Oct-04
ILD610
VISHAY
Vishay Semiconductors
Option 6
Option 7
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
TYP.
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
Document Number 83651
Rev. 1.6, 26-Oct-04
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18450
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7
ILD610
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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8
Document Number 83651
Rev. 1.6, 26-Oct-04