APT40GP90JDQ2
900V
TYPICAL PERFORMANCE CURVES
APT40GP90JDQ2
®
®
C
G
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
E
E
POWER MOS 7 IGBT
ISOTOP ®
• SSOA Rated
• Low Gate Charge
S
OT
22
7
"UL Recognized"
file # E145592
C
• Ultrafast Tail Current shutoff
G
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT40GP90JDQ2
VCES
Collector-Emitter Voltage
900
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current
I C2
Continuous Collector Current @ TC = 110°C
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
7
@ TC = 25°C
UNIT
Volts
64
27
1
Amps
160
Switching Safe Operating Area @ TJ = 150°C
160A @ 900V
Total Power Dissipation
Watts
284
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA)
900
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
TYP
MAX
4.5
6
Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C)
3.2
3.9
Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C)
2.7
(VCE = VGE, I C = 1mA, Tj = 25°C)
Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 25°C)
3
2
Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 125°C)
350
2
Gate-Emitter Leakage Current (VGE = ±20V)
Volts
µA
1500
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Units
nA
9-2005
MIN
Rev A
Characteristic / Test Conditions
050-7491
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT40GP90JDQ2
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
3
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
SSOA
Switching Safe Operating Area
td(on)
tr
td(off)
tf
Eon1
tf
f = 1 MHz
35
Gate Charge
7.5
VGE = 15V
145
15V, L = 100µH,VCE = 900V
TBD
795
Inductive Switching (125°C)
14
VCC = 600V
23
VGE = 15V
130
RG = 4.3Ω
90
TBD
I C = 40A
Eon1
Turn-on Switching Energy
Eon2
Turn-on Switching Energy (Diode)
Eoff
Turn-off Switching Energy
44
55
µJ
1350
6
Current Fall Time
ns
60
TJ = +25°C
Turn-off Delay Time
nC
90
I C = 40A
Current Rise Time
V
A
23
RG = 4.3Ω
Turn-on Delay Time
pF
160
14
5
UNIT
55
VCC = 600V
4
MAX
22
Inductive Switching (25°C)
Current Fall Time
Turn-off Switching Energy
td(off)
325
TJ = 150°C, R G = 4.3Ω, VGE =
Turn-off Delay Time
Eoff
tr
VGE = 0V, VCE = 25V
VGE = 15V
Turn-on Switching Energy (Diode)
td(on)
3300
I C = 40A
Current Rise Time
Eon2
TYP
Capacitance
VCE = 450V
Turn-on Delay Time
Turn-on Switching Energy
MIN
TJ = +125°C
ns
µJ
2280
6
1245
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.44
RθJC
Junction to Case (DIODE)
1.1
WT
VIsolation
Package Weight
29.2
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500
UNIT
°C/W
gm
Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
050-7491
Rev A
9-2005
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained h
TYPICAL PERFORMANCE CURVES
140
TJ = 25°C
80
TJ = 125°C
60
40
20
0
1
2
3
4
5
6
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
140
120
100
TJ = -55°C
60
TJ = 25°C
40
TJ = 125°C
20
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
IC = 80A
4
IC = 40A
3
IC = 20A
2
1
0
6
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.00
0.95
0.90
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
J
VCE = 180V
12
VCE = 450V
10
8
VCE = 720V
6
4
2
0
20
40 60 80 100 120 140 160
GATE CHARGE (nC)
FIGURE 4, Gate Charge
5.0
IC = 80A
4.0
IC = 40A
3.0
IC = 20A
2.0
1.0
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
90
1.10
1.05
I = 40A
C
T = 25°C
14
0
2
4
6
8
10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
80
20
FIGURE 2, Output Characteristics (TJ = 125°C)
IC, DC COLLECTOR CURRENT(A)
IC, COLLECTOR CURRENT (A)
160
40
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
TJ = 125°C
60
0
1
2
3
4
5
6
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
180
TJ = 25°C
80
0
0
200
TJ = -55°C
100
80
70
60
50
40
30
20
10
0
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
9-2005
100
120
Rev A
120
050-7491
TJ = -55°C
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
140
0
APT40GP90JDQ2
160
160
VGE = 15V
15
10
5
0
VCE = 600V
TJ = 25°C or 125°C
RG = 4.3Ω
L = 100µH
tf, FALL TIME (ns)
tr, RISE TIME (ns)
50
40
30
20
20 VCE = 600V
RG = 4.3Ω
L = 100µH
0
RG = 4.3Ω, L = 100µH, VCE = 600V
TJ = 125°C, VGE = 15V
80
60
40
TJ = 25°C, VGE = 15V
TJ = 25 or 125°C,VGE = 15V
0
100
80
60
40
20
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
100
80
60
40
20
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
6000
3500
V
= 600V
CE
V
= +15V
GE
R = 4.3Ω
EOFF, TURN OFF ENERGY LOSS (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
40
20
0
G
5000
4000
TJ = 125°C
3000
2000
1000
TJ = 25°C
0
= 600V
V
CE
= +15V
V
GE
R = 4.3Ω
3000
G
2500
TJ = 125°C
2000
1500
1000
500
TJ = 25°C
0
100
80
60
40
20
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
100
80
60
40
20
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
8000
6000
= 600V
V
CE
= +15V
V
GE
T = 125°C
7000
Eon2,80A
J
6000
5000
Eoff,80A
4000
Eon2,40A
3000
2000
Eoff,40A
Eon2,20A
1000
0
Eoff,20A
50
40
30
20
10
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
SWITCHING ENERGY LOSSES (µJ)
SWITCHING ENERGY LOSSES (µJ)
VGE =15V,TJ=25°C
60
100
10
9-2005
80
120
RG = 4.3Ω, L = 100µH, VCE = 600V
60
Rev A
VGE =15V,TJ=125°C
100
100
80
60
40
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
0
70
120
0
100
80
60
40
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
050-7491
APT40GP90JDQ2
140
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
20
= 600V
V
CE
= +15V
V
GE
R = 4.3Ω
G
5000
4000
Eon2,80A
Eoff,80A
3000
2000
Eon2,40A
Eoff,40A
1000
Eon2,20A
0
Eoff,20A
125
100
75
50
25
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
7,000
IC, COLLECTOR CURRENT (A)
P
C, CAPACITANCE ( F)
Cies
1,000
500
Coes
100
50
APT40GP90JDQ2
180
160
140
120
100
80
60
40
Cres
20
10
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
0
200
400
600
800
1000
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
D = 0.9
0.40
0.7
0.30
0.5
Note:
0.20
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.50
0.3
t2
0.10
0.1
0
t1
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
0.05
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Power
(Watts)
0.204
0.142
0.0117
0.136
1.07
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
F
= min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
10
max
5
1
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 600V
CE
R = 4.3Ω
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
G
10
20
30
40
50
60
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
9-2005
0.0940
50
Rev A
RC MODEL
050-7491
Junction
temp. (°C)
FMAX, OPERATING FREQUENCY (kHz)
140
100
APT40GP90JDQ2
APT30DQ100
Gate Voltage
10%
TJ = 125°C
td(on)
IC
V CC
V CE
tr
Collector Current
90%
5%
10%
5%
CollectorVoltage
A
D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
Gate Voltage
90%
TJ = 125°C
td(off)
CollectorVoltage
90%
tf
10%
0
Collector Current
Switching Energy
050-7491
Rev A
9-2005
Figure 23, Turn-off Switching Waveforms and Definitions
TYPICAL PERFORMANCE CURVES
APT40GP90JDQ2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol
IF(AV)
IF(RMS)
IFSM
All Ratings: TC = 25°C unless otherwise specified.
APT40GP90JDQ2
Characteristic / Test Conditions
Maximum Average Forward Current (TC = 92°C, Duty Cycle = 0.5)
30
RMS Forward Current (Square wave, 50% duty)
39
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
UNIT
Amps
210
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Characteristic / Test Conditions
MIN
Forward Voltage
TYP
IF = 30A
2.3
IF = 60A
2.8
IF = 30A, TJ = 125°C
1.7
MAX
UNIT
Volts
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
trr
Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C
F
F
R
J
-
25
trr
Reverse Recovery Time
-
240
Qrr
Reverse Recovery Charge
-
355
-
4
-
305
ns
-
1575
nC
-
9
-
135
ns
-
2270
nC
-
27
Amps
IRRM
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 30A, diF/dt = -200A/µs
VR = 667V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
VR = 667V, TC = 25°C
Maximum Reverse Recovery Current
trr
IRRM
IF = 30A, diF/dt = -200A/µs
IF = 30A, diF/dt = -1000A/µs
VR = 667V, TC = 125°C
Maximum Reverse Recovery Current
ns
nC
-
-
Amps
Amps
1.00
D = 0.9
0.80
0.7
0.60
0.5
0.40
Note:
PDM
0.3
t1
t2
0.20
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0
10-5
SINGLE PULSE
0.05
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Power
(watts)
0.291
0.00306
0.461
0.0463
0.341
0.267
Case temperature. (°C)
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
9-2005
RC MODEL
Rev A
Junction
temp. (°C)
050-7491
ZθJC, THERMAL IMPEDANCE (°C/W)
1.20
100
TJ = 175°C
70
60
TJ = 125°C
50
40
30
TJ = 25°C
20
TJ = -55°C
10
0
0.5
1.0 1.5 2.0
2.5
3.0 3.5
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 25. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
3500
T = 125°C
J
V = 667V
R
3000
60A
2500
2000
30A
1500
15A
1000
500
0
0
200
400
600
800
1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
trr
1.0
0.8
T = 125°C
J
V = 667V
60A
350
R
300
30A
250
15A
200
150
100
50
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 26. Reverse Recovery Time vs. Current Rate of Change
30
60A
T = 125°C
J
V = 667V
R
25
20
30A
15
10
15A
5
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Current vs. Current Rate of Change
50
Qrr
Duty cycle = 0.5
T = 175°C
45
J
40
trr
35
IRRM
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
1.2
trr, REVERSE RECOVERY TIME
(ns)
80
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT
(A)
90
0
APT40GP90JDQ2
400
0.6
30
25
20
0.4
Qrr
0.2
15
10
5
0.0
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature
050-7491
Rev A
CJ, JUNCTION CAPACITANCE
(pF)
9-2005
160
140
120
100
80
60
40
20
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature
TYPICAL PERFORMANCE CURVES
APT40GP90JDQ2
Vr
diF /dt Adjust
+18V
APT10035LLL
0V
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 32. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
3
0.25 IRRM
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Emitter/Anode
30.1 (1.185)
30.3 (1.193)
* Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
38.0 (1.496)
38.2 (1.504)
* Emitter/Anode
ISOTOP® is a Registered Trademark of SGS Thomson.
Collector/Cathode
Gate
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
9-2005
3.3 (.129)
3.6 (.143)
Rev A
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7491
7.8 (.307)
8.2 (.322)