ON NTD30N02 Power mosfet 30 amps, 24 volt Datasheet

NTD30N02
Power MOSFET
30 Amps, 24 Volts
N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
30 AMPERES
24 VOLTS
RDS(on) = 11.2 m (Typ.)
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
N−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
Rating
VDSS
24
Vdc
Gate−to−Source Voltage − Continuous
VGS
20
Vdc
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tp10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 24 Vdc, VGS = 10 Vdc,
L = 1.0 mH, IL(pk) = 10 A, RG = 25 Ω)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
G
Adc
ID
IDM
30
100
S
Apk
PD
75
W
TJ, Tstg
−55 to
150
°C
EAS
50
mJ
MARKING
DIAGRAM
4
Drain
4
1 2
YWW
D30
N02
•
•
•
•
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3
°C/W
RθJC
RθJA
RθJA
1.65
67
120
TL
260
DPAK
CASE 369C
(Surface Mount)
Style 2
2
1 Drain 3
Gate
Source
°C
D30N02
Y
WW
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Package
Shipping†
NTD30N02
DPAK
75 Units/Rail
NTD30N02T4
DPAK
2500 Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 2
1
Publication Order Number:
NTD30N02/D
NTD30N02
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
24
−
26.5
25.5
−
−
−
−
−
−
−
−
0.8
1.0
10
−
−
±100
1.0
−
2.1
−4.1
3.0
−
−
−
−
−
11.2
20
14.5
14.5
24
gFS
−
20
−
mhos
Ciss
−
1000
−
pF
Coss
−
425
−
Crss
−
175
−
td(on)
−
7.0
15
tr
−
28
55
td(off)
−
22
35
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
Adc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 30 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 15 Adc)
RDS(on)
Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 15 Adc)
Vdc
mV/°C
m
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 20 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
(VDD = 20 Vdc, ID = 30 Adc,
VGS = 10 Vdc, RG = 2.5 Ω)
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
(VDD = 20 Vdc, ID = 15 Adc,
VGS = 4.5 Vdc, RG = 2.5 Ω)
Turn−Off Delay Time
Fall Time
Gate Charge
(VDS = 20 Vdc,
Vd ID = 30 Adc,
Ad
VGS = 4.5 Vdc) (Note 3)
ns
tf
−
12
20
td(on)
−
12.5
−
tr
−
115
−
td(off)
−
15
−
tf
−
17
−
QT
−
14.4
20
Q1
−
4.0
−
Q2
−
8.5
−
VSD
−
−
−
0.95
1.10
0.80
1.2
−
−
Vdc
trr
−
30
−
ns
ta
−
14.5
−
tb
−
15.5
−
QRR
−
0.013
−
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 15 Adc, VGS = 0 Vdc)
(IS = 30 Adc, VGS = 0 Vdc) (Note 3)
(IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
Ad VGS = 0 Vdc,
Vd
(IS = 30 Adc,
dIS/dt = 100 A/µs) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
C
NTD30N02
60
60
50
8V
TJ = 25°C
4.6 V
7V
40
6V
30
VDS ≥ 10 V
5V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
VGS = 9 V
4.2 V
5.4 V
4V
20
3.4 V
3.6 V
10
50
40
30
20
TJ = 25°C
10
TJ = 100°C
TJ = −55°C
3V
1
2
3
4
5
6
7
8
0.01
3
4
5
6
7
8
9
10
7
8
0.07
TJ = 25°C
0.06
0.05
0.04
VGS = 4.5 V
0.03
VGS = 10 V
0.02
0.01
10
20
30
40
50
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
60
100
VGS = 0 V
IDSS, LEAKAGE (nA)
ID = 15 A
VGS = 10 V
1.2
1
0.8
0.6
−50
6
Figure 2. Transfer Characteristics
0.02
1.4
5
Figure 1. On−Region Characteristics
0.03
2
4
3
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID = 15 A
TJ = 25°C
0
2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)
0
0
1
0.04
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)
0
−25
0
25
50
75
100
125
150
TJ = 150°C
10
1
0.1
TJ = 100°C
0.01
4
8
12
16
20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
24
NTD30N02
C, CAPACITANCE (pF)
2500
Ciss
2000
VDS = 0 V
VGS = 0 V
TJ = 25°C
Crss
1500
Ciss
1000
Coss
500
Crss
0
10
5
0
VGS
5
10
15
20
25
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
QT
4
16
Q1
Q2
VGS
3
12
2
8
ID = 30 A
VDS = 20 V
VGS = 4.5 V
TJ = 25°C
1
4
0
0
0
16
4
8
12
QG, TOTAL GATE CHARGE (nC)
1000
VDS = 20 V
ID = 30 A
VGS = 10 V
t, TIME (ns)
20
VDS
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5
100
td(off)
tf
tr
10
td(on)
1
1
Figure 8. Gate−to−Source and Drain−to−Source
Voltage versus Total Charge
10
RG, GATE RESISTANCE (Ω)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
15
IS, SOURCE CURRENT (AMPS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
VGS = 0 V
TJ = 25°C
12
9
6
3
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
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4
100
NTD30N02
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
−T−
C
B
V
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD30N02
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
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NTD30N02/D