CLL2003 SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. MARKING: CATHODE BAND SOD-80 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Average Forward Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature SYMBOL UNITS VR VRRM IO 250 V 250 V 200 mA IF 250 mA IFRM IFSM 625 mA 4.0 A IFSM PD 1.0 A 500 mW -65 to +200 °C 350 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IR VR=200V 100 nA IR VR=200V, TA=150°C IR=100μA 100 μA Thermal Resistance BVR TJ, Tstg ΘJA 250 V VF VF IF=100mA 1.00 IF=200mA 1.25 V CT VR=0, f=1.0 MHz 5.0 pF trr IF=IR=30mA, Rec. to 3.0mA, 50 ns RL=100Ω V R3 (8-January 2010) CLL2003 SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE SOD-80 CASE - MECHANICAL OUTLINE MARKING: CATHODE BAND R3 (8-January 2010) w w w. c e n t r a l s e m i . c o m