Plastic-Encapsulate Transistors FEATURES MMST2907A (PNP) Epitaxial planar die construction Complementary PNP Type available(MMST2222A) Marking:K3F MAXIMUM RATINGS (TA=25 Parameter unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V 1. BASE Emitter-Base Voltage VEBO -5 V 2. EMITTER Collector Current -Continuous IC -600 mA Collector Power Dissipation PC 200 mW Tstg -55 to +150 Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter SOT-323 3. COLLECTO unless otherwise specified) Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-10μA,IE=0 -60 V Collector-emitter breakdown voltage VCEO IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage VEBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -100 nA Collector cut-off current ICES VCB=-30V,IB=0 -100 nA Emitter cut-off current IEBO VEB=-3V,IC=0 -100 nA hFE(1) VCE=-10V,IC=-0.1mA hFE(2) VCE=-10V,IC=-1mA 100 hFE(3) VCE=-10V,IC=-10mA 100 hFE(4) VCE=-10V,IC=-150mA 100 hFE(5) VCE=-10V,IC=-500mA 50 VCE(sat) IC=-150mA,IB=-15mA -0.4 V VCE(sat) IC=-500mA,IB=-50mA -1.6 V VBE(sat) IC=-150mA,IB=-15mA -1.3 V VBE(sat) IC=-500mA,IB=-50mA -2.6 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency fT VCE=-20V,IC=-50mA,f=100MHz 75 -0.6 300 200 MHz Output capacitance Cobo VCB=-10V,IE=0,f=0.1MHz 8 pF Input capacitance Cib VEB=-2V,IC=0,f=0.1MHz 30 pF td VCC=-30V,VBE(off)=-1.5V,IC=-150mA 10 nS Rise time tr IB1==- 15mA 40 nS Storage time tS 80 nS Fall time tf 30 nS Delay time GUANGDONG HOTTECH VCC=-30V,IC=-150mA,IB1=-IB2=-15mA INDUSTRIAL CO,. LTD. Page:P2-P1 Plastic-Encapsulate Transistors MMST2907A Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P2