NTF6P02T3 Power MOSFET −6.0 Amps, −20 Volts P−Channel SOT−223 http://onsemi.com Features • • • • • Low RDS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified Pb−Free Package is Available −6.0 AMPERES −20 VOLTS RDS(on) = 44 m P−Channel Typical Applications D • Power Management in Portables and Battery−Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −20 Vdc Gate−to−Source Voltage VGS ±8.0 Vdc ID ID Adc IDM −10 −8.4 −35 Total Power Dissipation @ TA = 25°C PD 8.3 W TJ, Tstg −55 to +150 °C EAS 150 mJ Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −5.0 Vdc, IL(pk) = −10 A, L = 3.0 mH, RG = 25W) Thermal Resistance − Junction to Lead (Note 1) − Junction to Ambient (Note 2) − Junction to Ambient (Note 3) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds RqJL RqJA RqJA 15 71.4 160 TL 260 Apk March, 2006 − Rev. 1 1 1 2 3 Drain 4 SOT−223 CASE 318E STYLE 3 AWW 6P02 G G 1 Gate 2 3 Drain Source °C/W A = Assembly Location WW = Work Week 6P02 = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) °C ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Steady State. 2. When surface mounted to an FR4 board using 1” pad size, (Cu. Area 1.127 sq in), Steady State. 3. When surface mounted to an FR4 board using minimum recommended pad size, (Cu. Area 0.412 sq in), Steady State. © Semiconductor Components Industries, LLC, 2006 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain Current (Note 1) − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Single Pulse (tp = 10 ms) Operating and Storage Temperature Range S Shipping† Device Package NTF6P02T3 SOT−223 NTF6P02T3G SOT−223 4000/Tape & Reel (Pb−Free) 4000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTF6P02T3/D NTF6P02T3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit −20 − −25 −11 − − − − − − −1.0 −10 − − ± 100 −0.4 − −0.7 2.6 −1.0 − − − − 44 57 57 50 70 − gfs − 12 − Mhos Ciss − 900 1200 pF Coss − 350 500 Crss − 90 150 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 4) (VGS = 0 Vdc, ID = −250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = −20 Vdc, VGS = 0 Vdc) (VDS = −20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (Note 4) (VDS = VGS, ID = −250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 4) (VGS = −4.5 Vdc, ID = −6.0 Adc) (VGS = −2.5 Vdc, ID = −4.0 Adc) (VGS = −2.5 Vdc, ID = −3.0 Adc) RDS(on) Forward Transconductance (Note 4) (VDS = −10 Vdc, ID = −6.0 Adc) Vdc mV/°C mW DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = −16 Vdc, VGS = 0 V, f = 1.0 MHz) Transfer Capacitance Input Capacitance Output Capacitance Ciss − 940 − Coss − 410 − Crss − 110 − (VDD = −5.0 Vdc, ID = −1.0 Adc, VGS = −4.5 Vdc, RG = 6.0 W) td(on) − 7.0 12 tr − 25 45 td(off) − 75 125 tf − 50 85 (VDD = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc, RG = 2.5 W) td(on) − 8.0 − (VDS = −10 Vdc, VGS = 0 V, f = 1.0 MHz) Transfer Capacitance pF SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Gate Charge tr − 30 − td(off) − 60 − tf − 60 − ns ns QT − 15 20 Qgs − 1.7 − Qgd − 6.0 − (IS = −3.0 Adc, VGS = 0 Vdc) (Note 4) (IS = −2.1 Adc, VGS = 0 Vdc) (IS = −3.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − − −0.82 −0.74 −0.68 −1.2 − − Vdc (IS = −3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 4) trr − 42 − ns ta − 17 − tb − 25 − QRR − 0.036 − (VDS = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc) (Note 4) nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage Reverse Recovery Time Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 mC NTF6P02T3 12 −10 V −7.0 V −5.0 V 9 −2.2 V −2.0 V −2.4 V −3.2 V −4.4 V 12 TJ = 25°C −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS −1.8 V 6 −1.6 V 3 −1.4 V VGS = −1.2 V 0 0 1 2 4 3 5 6 7 8 9 VDS ≥ −10 V 10 8 6 4 TJ = −55°C 2 0 10 TJ = 25°C 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.5 0.1 0.05 2 1 3 5 4 6 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID = −6.0 A TJ = 25°C 0 2.5 3 TJ = 25°C 0.07 VGS = −2.5 V 0.06 0.05 VGS = −4.5 V 0.04 0.03 0.02 2 4 6 8 12 10 14 −ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance versus Drain Current and Gate Voltage 1.6 10,000 ID = −6.0 A VGS = −4.5 V VGS = 0 V TJ = 150°C −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2 0.08 Figure 3. On−Resistance versus Gate−to−Source Voltage 1.4 1.5 Figure 2. Transfer Characteristics 0.2 0 1 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics 0.15 TJ = 100°C 1.2 1000 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 TJ = 100°C 100 2 4 6 8 10 12 14 16 18 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Drain−to−Source Leakage Current versus Voltage Figure 5. On−Resistance Variation with Temperature http://onsemi.com 3 20 NTF6P02T3 VDS = 0 V VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) Ciss 2400 1800 Crss 1200 Ciss 600 Coss Crss 0 10 10 15 20 −VDS 16 −VGS 3 12 Qgs Qgd 2 8 ID = −6.0 A TJ = 25°C 1 4 0 0 0 4 8 12 16 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 7 −IS, SOURCE CURRENT (AMPS) VDD = −16 V ID = −3.0 A VGS = −4.5 V td(off) 100 tf tr 10 1 4 20 QT GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1000 t, TIME (ns) 5 −VGS 0 −VDS 5 5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 3000 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS td(on) VGS = 0 V TJ = 25°C 6 5 4 3 2 1 0 1 10 RG, GATE RESISTANCE (W) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.3 0.6 1.2 0.9 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTF6P02T3 TYPICAL ELECTRICAL CHARACTERISTICS RTHJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 1 D = 0.5 0.2 0.1 0.1 NORMALIZED TO RqJA AT STEADY STATE (1″ PAD) 0.05 0.0175 W CHIP JUNCTION 0.0154 F 0.02 0.01 0.0710 W 0.2706 W 0.5779 W 0.7086 W 0.0854 F 0.3074 F 1.7891 F 107.55 F AMBIENT SINGLE PULSE 0.01 1.0E−03 1.0E−02 1.0E−01 1.0E+00 t, TIME (s) 1.0E+01 Figure 11. FET Thermal Response http://onsemi.com 5 1.0E+02 1.0E+03 NTF6P02T3 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L D b1 4 HE 1 2 3 E b e1 e C A 0.08 (0003) A1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b b1 c D E e e1 L1 HE STYLE 3: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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