DIGITRON SEMICONDUCTORS MCR3835 SERIES SILICON CONTROLLED RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Peak repetitive forward and reverse blocking voltage MCR3835-1 MCR3835-2 MCR3835-3 MCR3835-4 MCR3835-5 MCR3835-6 MCR3835-7 MCR3835-8 MCR3835-9 MCR3835-10 Value Unit (1) 25 50 100 200 300 400 500 600 700 800 VRRM, VDRM Peak non-repetitive blocking voltage(1) MCR3835-1 MCR3835-2 MCR3835-3 MCR3835-4 MCR3835-5 MCR3835-6 MCR3835-7 MCR3835-8 MCR3835-9 MCR3835-10 25 50 100 200 300 400 500 600 700 800 VRRM, VDRM Forward on-state current RMS (all conduction angles) Volts IT(RMS) Volts 35 Amps Peak surge current (one cycle, 60Hz, TJ = -40 to +125°C) ITSM Circuit fusing considerations (TJ = -40 to +100°C, t ≤ 8.3ms) I2t Peak gate power PGM 5 Watts Average gate power Amps 35 A2s 510 PG(AV) 0.5 Watts Peak forward gate current IGM 2 Amps Peak gate voltage, forward or reverse VGM 10 Volts Operating junction temperature range TJ -40 to +125 °C Tstg -40 to +150 °C 30 In. lb. Storage temperature range Mounting torque Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Symbol Maximum Unit RӨJC 1.2 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C) Characteristic Peak forward or reverse blocking current (Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 100°C Forward “on” voltage (ITM = 35A peak) 144 Market Street Kenilworth NJ 07033 USA Symbol IDRM, IRRM VTM phone +1.908.245-7200 fax +1.908.245-0555 Min. Typ. Max. Unit - 1 10 5 µA mA - 1.2 1.5 [email protected] www.digitroncorp.com Rev. 20130118 Volts DIGITRON SEMICONDUCTORS MCR3835 SERIES SILICON CONTROLLED RECTIFIER Characteristic Symbol Min. Typ. Max. - 10 40 0.2 0.7 - 1.5 - - 10 50 - 1 - tq - 20 30 - dv/dt - 50 - Gate trigger current (continuous dc) (VD = 7V, RL = 100Ω) IGT Gate trigger voltage (continuous dc) (VD = 7V, RL = 100Ω) (VD = rated VDRM, RL = 100Ω, TJ = 100°C) VGT VGD Holding current (VD = 7Vdc, gate open) IH Turn-on time (td + tr) (ITM = 35A, IGT = 40mAdc) Ton Turn-off time (ITM = 10A, IR = 10A) (ITM = 10A, IR = 10A, TJ = 100°C) Forward voltage application rate (VD = rated VDRM, TJ = 100°C) MECHANICAL CHARACTERISTICS Case Digi PF2 (MCR3835 series) Marking Body painted, alpha-numeric DIGI PF2 A B C E F J K N Q 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 Inches Min Max 0.501 0.505 0.465 0.475 0.330 0.380 0.100 0.035 0.085 0.080 0.097 0.800 0.510 0.065 0.160 Millimeters Min Max 12.730 12.830 11.810 12.060 8.390 9.650 2.540 0.890 2.160 2.040 2.460 20.320 12.950 1.650 4.060 [email protected] www.digitroncorp.com Rev. 20130118 Unit mA Volts mA µs µs V/µs DIGITRON SEMICONDUCTORS MCR3835 SERIES 144 Market Street Kenilworth NJ 07033 USA SILICON CONTROLLED RECTIFIER phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20130118