AP4961GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
DUAL P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
▼ Lower On-resistance
D2
D1
▼ Simple Drive Requirement
D1
▼ Dual P MOSFET Package
-20V
RDS(ON)
28mΩ
ID
G2
S2
SO-8
BVDSS
-7A
G1
S1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
D2
D1
G2
G1
S2
S1
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-20
V
+8
V
Continuous Drain Current
3
-7
A
Continuous Drain Current
3
-5.5
A
-20
A
2
W
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient3
62.5
℃/W
Data and specifications subject to change without notice
1
201101192
AP4961GM
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-20
-
-
V
VGS=-4.5V, ID=-7A
-
-
28
mΩ
VGS=-2.5V, ID=-5A
-
-
32
mΩ
VGS=-1.8V, ID=-2A
-
-
40
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-
-
-1
V
gfs
Forward Transconductance
VDS=-5V, ID=-7A
-
25
-
S
IDSS
Drain-Source Leakage Current
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=70 C) VDS=-16V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+100
nA
ID=-7A
-
26.5
42
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-10V
-
2.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
7
-
nC
2
td(on)
Turn-on Delay Time
VDS=-10V
-
10
-
ns
tr
Rise Time
ID=-1A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
90
-
ns
tf
Fall Time
VGS=-5V
-
75
-
ns
Ciss
Input Capacitance
VGS=0V
-
2250 3600
pF
Coss
Output Capacitance
VDS=-20V
-
235
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
220
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
Test Conditions
IS=-1.7A, VGS=0V
2
Max. Units
-1.2
V
trr
Reverse Recovery Time
IS=-7A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
50
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board ; 135 ℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4961GM
20
20
-5.0V
-4.5V
-3.5V
-2.5V
V G = -1.8V
-ID , Drain Current (A)
16
16
12
8
12
8
4
4
0
0
0
0
1
1
2
0
2
1
-V DS , Drain-to-Source Voltage (V)
2
3
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
34
I D = -2 A
I D =-7A
V G =-4.5V
T A =25 o C
1.4
Normalized RDS(ON)
30
RDS(ON) (mΩ)
-5.0V
-4.5V
-3.5V
-2.5V
V G = -1.8V
o
T A = 150 C
-ID , Drain Current (A)
o
T A = 25 C
26
22
1.2
1.0
0.8
18
14
0.6
0
2
4
6
-50
8
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2.0
Normalized -VGS(th) (V)
1.6
-IS(A)
6
T j =150 o C
T j =25 o C
4
1.2
0.8
2
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4961GM
f=1.0MHz
3200
I D =-7A
V DS =-10V
5
2400
C iss
4
C (pF)
-VGS , Gate to Source Voltage (V)
6
3
1600
2
800
1
C oss
C rss
0
0
0
10
20
30
40
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
Normalized Thermal Response (Rthja)
100
100us
-ID (A)
Operation in this area
limited by RDS(ON)
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
V DS =-5V
o
T j =25 C
o
VG
T j =150 C
-ID , Drain Current (A)
16
QG
-4.5V
12
QGS
QGD
8
4
Charge
Q
0
0
0.4
0.8
1.2
1.6
2
2.4
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4