BF 770A NPN Silicon RF Transistor 3 For IF amplifiers in TV-sat tuners and for VCR modulators 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 770A LSs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 50 Base current IB 6 Total power dissipation, TS 63 °C F) Ptot 300 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA Thermal Resistance Junction - soldering point RthJS 290 K/W 1T is measured on the collector lead at the soldering point to the pcb S 1 Oct-26-1999 BF 770A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 10 µA hFE 50 100 200 - DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V 2 Oct-26-1999 BF 770A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 4.5 6 - Ccb - 0.58 0.9 Cce - 0.23 - Ceb - 1.7 - AC characteristics (verified by random sampling) Transition frequency fT GHz IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 2 - f = 1.8 GHz - 3.3 - f = 900 MHz - 13.5 - f = 1.8 GHz - 8.5 - - 12 - - 6.5 - Power gain, maximum available 1) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , |S21e|2 Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2) 3 Oct-26-1999