Reflective Photosensors (Photo Reflectors) CNB1011 Reflective photosensor 1 Unit: mm 4 Non-contact point SW, object sensing C0.3 ■ Features • Ultraminiature, thin type: 2.29 mm × 2.9 mm (height: 0.88 mm) 2 3 0.748 1.325 0.577 Parameter Input (Light Reverse voltage emitting diode) Forward current Power dissipation *1 Symbol Rating Unit VR 6 V IF 30 mA PD 75 mW Output (Photo Collector-emitter voltage transistor) (Base open) VCEO 35 V Emitter-collector voltage (Base open) VECO 6 V IC 20 mA Collector current Temperature Collector power dissipation *2 PC 75 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −40 to +100 °C 0.58±0.15 0.88±0.15 ■ Absolute Maximum Ratings Ta = 25°C 0.75 max. 1.285 0.75 max. 2.29±0.1 2.9±0.1 1.7 1.7 5.69±0.3 4-0.5 1.45 1: Anode 2: Cathode 3: Emitter 4: Collector PRSMW104-002 Package 0.7 1.4 (Note) Tolerance unless otherwise specified is ±0.2 Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Input Symbol Forward voltage characteristics Reverse current Conditions Typ Max Unit 1.15 1.30 V VR = 3 V 10 µA VCE = 20 V 100 nA 243 µA VF IF = 4 mA IR Min Output Collector-emitter cutoff current characteristics (Base open) ICEO Collector current *1 IC VCE = 2 V, IF = 4 mA, d = 1 mm ID VCE = 2 V, IF = 4 mA 100 nA IF = 20 mA, IC = 0.1 mA 0.4 V Transfer characteristics Dark current Collector-emitter saturation voltage VCE(sat) Rise time *2 Fall time *2 tr VCC = 2 V, IC = 0.1 mA 40 µs tf RL = 1 000 Ω 50 µs Note) 1. Input and output are handled electrically. 2. This product is not designed to withstand radiation 3. *1: Output current measurement method Glass plate evaporated Al d = 1 mm IF Publication date: April 2004 RL IC VCC 40 Sig. in 50 Ω *2: Switching time measurement circuit Glass plate evaporated Al d = 1 mm RL Sig. out tr: Rise time tf: Fall time Sig. in Sig. out VCC SHG00056BED tr tf 90% 10% 1 CNB1011 IF V F 104 Ta = 25°C VCE = 2 V Ta = 25°C RL = 100 Ω d = 1 mm IC 20 10 Collector current IC (µA) 50 IF 30 40 30 20 103 102 10 0 0 20 40 60 80 0 100 0.4 0.8 1.2 1.6 2.0 Forward voltage VF (V) VF Ta 1 ∆IC Ta 160 Ta = 25°C 1.4 IF = 20 mA Collector current IC (µA) IF = 10 mA 1.0 4 mA 1 mA 0.8 0.6 0.4 102 10 Forward current IF (mA) IC VCE 104 1.6 1.2 10 10−1 2.4 Relative collector current ∆IC (%) 0 −25 Ambient temperature Ta (°C) Forward voltage VF (V) IC I F 60 Forward current IF (mA) Forward current IF , Collector current IC (mA) IF , IC Ta 40 15 mA 10 mA 8 mA 6 mA 4 mA 103 102 2 mA 10 VCC = 2 V IF = 4 mA RL = 100 Ω 120 80 40 0.2 0 40 80 Ambient temperature Ta (°C) 0 2 Rise time tr , fall time tf (µs) Collector-emitter cutoff current (Base open) ICEO (µA) 1 10−1 10−2 10−3 0 20 40 60 80 Ambient temperature Ta (°C) 2 100 40 80 tr , tf IC ∆IC d VCC = 2 V Ta = 25°C : tr : tf 102 RL = 2 kΩ 1 kΩ 10 1 10−2 100 Ω 10−1 80 60 40 20 0 1 Collector current IC (mA) SHG00056BED VCC = 2 V Ta = 25°C IF = 4 mA 100 10−4 10−5 −20 0 Ambient temperature Ta (°C) 103 VCC = 20 V 0 −40 8 6 Collector-emitter voltage VCE (V) ICEO Ta 10 4 Relative collector current ∆IC (%) 1 0 −40 10 0 2 4 6 8 Distance d (mm) 10 12 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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