Yea Shin ES1B Surface mount superfast rectifier voltage - 50 to 600 volts current - 1.0 ampere Datasheet

DATA SHEET
SEMICONDUCTOR
ES1A~ES1J
SURFACE MOUNT SUPERFAST RECTIFIER
VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere
FEATURES
SMA/DO-214AC
• For surface mounted applications
Unit:inch(mm)
• Low profile package
• Built-in strain relief
.062(1.60)
.047(1.20)
• Easy pick and place
• Superfast recovery times for high efficiency
.114(2.90)
.098(2.50)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• Glass passivated junction
.181 (4.60)
.157(4.00)
• High temperature soldering:
260 OC / 10 seconds at terminals
• High temperature soldering : 260OC / 10 seconds at terminals
• Pb free product at available : 99% Sn above meet RoHS
.096(2.44)
.078(2.00)
environment substance directive request
.012(.305)
MECHANICAL DATA
.006(.152)
• Case: JEDEC DO-214AC molded plastic
.008(.203 )
.002(.051)
.060(1.52)
.030(0.76)
• Terminals: Solder plated, solderable per
.208(5.28)
.188(4.80)
MIL-STD-750, Method 2026
• Polarity: Indicated by cathode band
• Standard packaging: 12mm tape (EIA-481)
• Weight: 0.002 ounce, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 OC ambient temperature unless otherwise specified.
Single phase, half wave 60Hz resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOLS
ES1A
ES1B
ES1C
ES1D
ES1E
ES1G
ES1J
UNITS
Maximum Recurrent Peak Reverse V oltage
VRRM
50
100
150
200
300
400
600
Volts
Maximum RMS Voltage
VRMS
35
70
105
140
210
280
420
Volts
Maximum DC Blocking Voltage
VDC
50
100
150
200
300
400
600
Volts
Maximum Average Forward Rect if ied Current ,
Volts
at TL=120
Peak For ward Surge Current 8.3ms single half
si newave superi mposed on rated load(JEDEC method)
Maximum Instantaneous Forward Vol tage at 1.0A
IFSM
VF
Amps
30.0
Amps
0.95
Maxi mum DC Reverse Current T A=25 °C
At Rated DC Blocking Voltage TA=100°C
1.0
1.25
5.0
IR
100
1.7
Volts
uA
TRR
35.0
Typi cal Junction capacitance (Note 2)
Cj
10.0
pF
Typical Thermal Resistance (Note 3 )
RθJA
35
°C /W
Operating and Storage Temperature Range
TSTG
-55to +150
°C
Maximum Reverse Recovery Time (Note 1)
nS
NOTES:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts
3. 8.0mm2 (.013mm thick) land areas
http://www.yeashin.com
1
REV.02 20110725
RATING AND CHARACTERISTIC CURVES
ES1A THRU ES1J
trr
AVERAGE FORWARD
CURRENT AMPERES
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
2.0
SINGLE PHASE HALF WAVE
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.315×0.315"(8.0×8.0mm)
PAD AREAS
1.0
-1.0
SET TIME
BASE FOR
Source Impedance = 50 Ohms
1cm
25
1000
TJ = 125 °C
10
TJ = 75 °C
1
TJ = 25 °C
0.1
40
60
80
100
100 125 150 175
Fig. 2-MAXIMUM AVERAGE FORWARD
CURRENT RATING
10
INSTANTANEOUS FORWARD CURRENT AMPERES
IR-REVERSE LEAKAGE CURRENT, MICROAMPERES
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND
TEST CIRCUIT DIAGRAM
20
75
LEAD TEMPERATURE, °C
50 ns/cm
100
50
ES1A
1
ES1E
ES1J
0.1
T J = 25 °C
0.01
0.001
120
0.2
0.4
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE VOLTS
Fig. 3-TYPICAL REVERSE CHARACTERISTICS
Fig. 4-TYPICAL FORWARD CHARACTERISTICS
14
30
JUNCTION CAPACITANCE, pF
PEAK FORWARD SURGE CURRENT, AMPERES
% OF PIV. VOLTS
25
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
20
15
10
5
1
2
5
10
20
50
100
10
TJ = 25 °C
f = 1.0MHz
Vsig = 50mVp-p
8.0
6.0
4.0
2.0
.1
NUMBER OF CYCLES AT 60Hz
1
10
100
REVERSE VOLTAGE, VOLTS
Fig. 5-MAXIMUM NON-REPETITIVE SURGE
CURRENT
http://www.yeashin.com
12
Fig. 6-TYPICAL JUNCTION CAPACITANCE
2
REV.02 20110725
Similar pages