CHAMP CMT06N60N220 Power field effect transistor Datasheet

CMT06N60
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
!
Robust High Voltage Termination
scheme to provide enhanced voltage-blocking capability
!
Avalanche Energy Specified
without degrading performance over time. In addition, this
!
Source-to-Drain Diode Recovery Time Comparable to a
advanced MOSFET is designed to withstand high energy in
Discrete Fast Recovery Diode
avalanche and commutation modes. The new energy
!
Diode is Characterized for Use in Bridge Circuits
efficient design also offers a drain-to-source diode with a
!
IDSS Specified at Elevated Temperature
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
D
SO URCE
DRAIN
G ATE
Front View
G
1
2
S
3
N-Channel MOSFET
2003/06/19 Preliminary Rev. 1.1
Champion Microelectronic Corporation
Page 1
CMT06N60
POWER FIELD EFFECT TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current - Continuous
- Pulsed
Gate-to-Source Voltage - Continue
- Non-repetitive
Total Power Dissipation
Symbol
Value
Unit
A
ID
6.0
IDM
18
VGS
±20
V
VGSM
±40
V
PD
W
TO-220
125
TO-220FP
45
Operating and Storage Temperature Range
TJ, TSTG
-55 to 150
(VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25Ω)
EAS
180
Thermal Resistance - Junction to Case
θJC
1.0
θJA
62.5
TL
260
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
℃
mJ
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃
℃/W
℃
(1) VDD = 50V, ID = 6A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
ORDERING INFORMATION
Part Number
CMT06N60N220
CMT06N60N220FP
Package
TO-220
TO-220FP
TEST CIRCUIT
Test Circuit – Avalanche Capability
2003/06/19 Preliminary Rev. 1.1
Champion Microelectronic Corporation
Page 2
CMT06N60
POWER FIELD EFFECT TRANSISTOR
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT06N60
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Symbol
Min
V(BR)DSS
600
Typ
Max
Units
V
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125℃)
IDSS
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
IGSSR
100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
VGS(th)
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) *
RDS(on)
Forward Transconductance (VDS = 15 V, ID = 3.0A) *
Input Capacitance
Reverse Transfer Capacitance
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
gFS
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Output Capacitance
Turn-On Delay Time
μA
100
50
(VDD = 300 V, ID = 6.0 A,
VGS = 10 V,
RG = 9.1Ω) *
2.0
1.2
Ω
3.4
mhos
Ciss
1498
2100
Coss
158
220
pF
pF
Crss
29
60
pF
td(on)
14
30
tr
19
40
ns
ns
td(off)
40
80
ns
tf
26
55
ns
Qg
35.5
50
Qgs
8.1
nC
nC
Qgd
14.1
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
VSD
0.83
ton
**
ns
trr
266
ns
Gate-Source Charge
Gate-Drain Charge
(VDS = 300 V, ID = 6.0 A,
VGS = 10 V)*
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 6.0 A,
dIS/dt = 100A/µs)
1.2
V
* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
2003/06/19 Preliminary Rev. 1.1
Champion Microelectronic Corporation
Page 3
CMT06N60
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2003/06/19 Preliminary Rev. 1.1
Champion Microelectronic Corporation
Page 4
CMT06N60
POWER FIELD EFFECT TRANSISTOR
PACKAGE DIMENSION
TO-220
A
D
c1
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
E1
E
F
φ
A
A1
L1
b
b1
c
c1
D
L
E
E1
e
e1
F
L
b1
A1
c
e
b
e1
L1
φ
Side View
Front View
TO-220FP
C
I
0
R1
.5
0
.1
± 0
8
1
.
R3
B
J
H
Q
D
R1
.5
0
A
A
B
C
D
E
E
H
I
O
P
K
G
J
K
0
.6
R1
M
N
O
P
G
Q
b
R
b
b1
b2
e
N
M
b2
b1
e
Front View
2003/06/19 Preliminary Rev. 1.1
R
Side View
Back View
Champion Microelectronic Corporation
Page 5
CMT06N60
POWER FIELD EFFECT TRANSISTOR
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage.
CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications.
understood to be fully at the risk of the customer.
Use of CMC products in such applications is
In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
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Sales & Marketing
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
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Hsichih, Taipei Hsien 221, Taiwan
2003/06/19 Preliminary Rev. 1.1
T E L : +886-2-8692 1591
F A X : +886-2-8692 1596
Champion Microelectronic Corporation
Page 6
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