UTC DTC143TL-AL3-R Npn digital transistor (built- in bias resistors) Datasheet

UNISONIC TECHNOLOGIES CO., LTD
DTC143T
NPN SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
3
FEATURES
1
2
EQUIVALENT CIRCUIT
B
SOT-23
3
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
R1
1
2
SOT-323
3
C
2
E
1
SOT-523
* Pb-free plating product number: DTC143TL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
DTC143T-AE3-R
DTC143TL-AE3-R
DTC143T-AL3-R
DTC143TL-AL3-R
DTC143T-AN3-R
DTC143TL-AN3-R
DTC143TL-AE3-R
Package
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
CE3T
For SOT -23/SOT-323 Package
C5T
For SOT-523 Package
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R206-059,D
DTC143T
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
50
V
50
V
5
V
100
mA
SOT-523
150
mW
Collector Power Dissipation
PC
SOT-23/SOT-323
200
mW
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55~+150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
DC Current Gain
Input Resistance
Transition Frequency
* Transition frequency of the device.
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
hFE
R1
fT
TEST CONDITIONS
IC =50µA
IC =1mA
IE =50µA
VCB=50V
VEB =4V
IC =5mA, IB=0.25mA
VCE=5V, IC=1mA
VCE =10V, IE =5mA, f=100MHz *
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
50
50
5
TYP
100
3.29
250
4.7
250
MAX UNIT
V
V
V
0.5
µA
0.5
µA
0.3
V
600
6.11 kΩ
MHz
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QW-R206-059,D
DTC143T
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain vs. Collector Current
1000
200
Ta=100℃
25℃
-40℃
100
50
20
10
5
2
Ic/I B=20
500m
Collector Saturation Volt age, VCE(S AT)
DC Current Gain, hFE
500
1
0.1
1
VCE =5V
Collector-Emitter Saturation Voltage vs.
Collector Current
Ta=100℃
25℃
-40℃
200m
100m
50m
20m
10m
5m
2m
0.2
0.5
1
2
5
10
20
50
100
Collector Current, Ic (mA)
1m
0.1
0. 2
0.5
1
2
5
10
20
50
100
Collector Current, Ic (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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