To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. 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The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS5ASH-06 HIGH-SPEED SWITCHING USE FS5ASH-06 OUTLINE DRAWING Dimensions in mm 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡2.5V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) .............................................................. 0.15Ω ¡ID ............................................................................................ 5A ¡Integrated Fast Recovery Diode (TYP.) ............. 45ns q GATE w DRAIN e SOURCE r DRAIN q e MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 60 V VGSS ID Gate-source voltage Drain current VDS = 0V ±10 5 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 20 5 A A IS ISM Source current Source current (Pulsed) 5 20 A A PD T ch Maximum power dissipation Channel temperature 20 –55 ~ +150 W °C –55 ~ +150 °C 0.26 g T stg — Parameter Conditions L = 100µH Storage temperature Weight Typical value Feb.1999 MITSUBISHI Nch POWER MOSFET FS5ASH-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 4V ID = 2A, VGS = 2.5V ID = 2A, VGS = 4V ID = 2A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz VDD = 30V, ID = 2A, VGS = 4V, RGEN = RGS = 50Ω IS = 2A, VGS = 0V Channel to case IS = 5A, dis/dt = –100A/µs Unit Min. Typ. Max. 60 — — — — ±0.1 V µA — 0.6 — 0.9 0.1 1.2 mA V — 0.11 0.15 Ω — — 0.13 0.22 0.20 0.3 Ω V — — 10 540 — — S pF — — 120 40 — — pF pF — — 12 20 — — ns ns — 50 — ns — — 32 1.0 — 1.5 ns V — — — 45 6.25 — °C/W ns PERFORMANCE CURVES 32 24 16 8 0 MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 40 0 50 150 200 100ms 100 7 5 3 2 1ms 10ms DC 10–1 7 5 TC = 25°C 3 Single Pulse 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) PD = 20W 20 100 tw = 10ms 101 7 5 3 2 VGS = 5V VGS = 5V 4V 3V 2.5V 10 4V Tc = 25°C Pulse Test Tc = 25°C Pulse Test 16 2.5V 12 8 2V 4 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3V 8 2V 6 4 1.5V 2 1.5V 0 0 1.0 2.0 3.0 4.0 5.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5ASH-06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 4.0 3.0 2.0 ID = 8A 5A 2A 1.0 0 0 1.0 2.0 3.0 120 80 40 TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) Tc = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 4V 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 5.0 6 4 2 102 7 5 4 3 2 VDS = 5V Pulse Test TC = 25°C 75°C 125°C 101 7 5 4 3 2 0 1.0 2.0 3.0 4.0 100 0 10 5.0 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 103 7 5 3 2 Ciss Coss 102 7 5 3 Tch = 25°C 2 f = 1MHZ 101 VGS = 2.5V 160 DRAIN CURRENT ID (A) 8 0 Tc = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 10 CAPACITANCE Ciss, Coss, Crss (pF) 4.0 200 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) Tc = 25°C Pulse Test Crss VGS = 0V 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 3 2 Tch = 25°C VDD = 30V VGS = 4V RGEN = RGS = 50Ω 102 7 5 3 2 tf td(off) tr td(on) 101 7 5 3 2 100 –1 10 2 3 4 5 7 100 2 3 4 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5ASH-06 HIGH-SPEED SWITCHING USE 5.0 SOURCE CURRENT IS (A) VDS = 10V 3.0 20V 40V 2.0 1.0 0 2 4 6 8 TC = 125°C 12 75°C 4 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 1.6 1.2 0.8 0.4 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 25°C 8 0 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 16 10 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 20 Tch = 25°C ID = 5A 4.0 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 D = 1.0 5 0.5 3 2 0.2 100 7 5 3 2 PDM 0.1 0.05 0.02 0.01 Single Pulse tw T D= tw T 10–1 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999