UTC C6084 Switching regulator application Datasheet

UNISONIC TECHNOLOGIES CO., LTD
C6084
NPN SILICON TRANSISTOR
SWITCHING REGULATOR
APPLICATIONS
„
1
FEATURES
TO-220
* High Speed.
* High Breakdown Voltage (VCBO=1500V).
* High Reliability.
1
TO-220F
1
TO-126
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
C6084L-TA3-T
C6084G-TA3-T
C6084L-TF3-T
C6084G-TF3-T
C6084L-T60-K
C6084G-T60-K
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., LTD
Package
TO-220
TO-220F
TO-126
Pin Description
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Bulk
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„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
1.5
Collector-Base Voltage
VCBO
KV
1.4
Collector-Emitter Voltage
VCEO
800
V
Emitter-Base Voltage
VEBO
5
V
TO-220
5
A
IC
3
TO-126
Collector Current
TO-220
12
ICP
A
TO-126
6
TO-220
1.75
W
Collector Dissipation
PC
TO-126
1.25
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
TO-220
TO-126
„
ELECTRICAL CHARACTERISTICS (TA=25℃)
PARAMETER
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector-Emitter
TO-220
Saturation Voltage
TO-126
Base-Emitter Saturation TO-220
Voltage
TO-126
TO-220/TO-126
DC Current Gain
TO-220
TO-126
Fall Time
SYMBOL
ICBO
ICES
VCEO(SUS)
IEBO
VCE(SAT)
VBE(SAT)
hFE1
hFE2
TF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
VCB=800V, IE=0A
VCE=1500V, RBE=0Ω
IC=10mA, IB=0A
VBE=4V, IC=0A
IC=2.7A, IB=0.54A
IC=1.4A, IB=0.27A
IC=2.7A, IB=0.54A
MIN
800
1.5
IC=1.4A, IB=0.27A
VCE=5V, IC=0.5A
VCE=5V, IC=3A
10
VCE=5V, IC=1.8A
5
IC=1.8A, IB1=0.36A, IB2=-0.72A
TYP MAX UNIT
10
µA
1.0 mA
V
1.0 mA
3
V
3
1.5
5
V
7
7
0.2
µS
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„
NPN SILICON TRANSISTOR
TEST CIRCUIT
PW=20µs
D.C.≤1%
IB1
OUTPUT
IB2
RB
INPUT
RL=111Ω
VR
50Ω
100µF
VBE=-5V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
470µF
VCC=200V
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TYPICAL CHARACTERISTICS
Collector Current VS. BVCES
1.2
1.0
0.8
0.6
0.4
0.2
0
Collector-Emitter Breakdown Voltage ,BVCES (kV)
1.2
1.0
0.8
0.6
0.4
0.2
0
20
10
5
15
0
Emitter-Base Breakdown Voltage ,BVEBO (V)
0.8
0.6
0.4
0.2
14
Collector Current , IC(mA)
1.4
1.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Collector-Base Breakdown Voltage ,BVCBO (kV)
Emitter Current VS. BVEBO
1.6
1.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1.8
Collector Current VS. BVCBO
1.4
Collector Current , IC(mA)
Collector Current , IC(mA)
1.4
Emitter Current , IE(mA)
„
NPN SILICON TRANSISTOR
Collector Current VS. VCEO(SUS)
12
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Collector-Emitter Voltage ,VCEO(SUS) (kV)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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