UNISONIC TECHNOLOGIES CO., LTD C6084 NPN SILICON TRANSISTOR SWITCHING REGULATOR APPLICATIONS 1 FEATURES TO-220 * High Speed. * High Breakdown Voltage (VCBO=1500V). * High Reliability. 1 TO-220F 1 TO-126 ORDERING INFORMATION Ordering Number Lead Free Halogen Free C6084L-TA3-T C6084G-TA3-T C6084L-TF3-T C6084G-TF3-T C6084L-T60-K C6084G-T60-K www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., LTD Package TO-220 TO-220F TO-126 Pin Description 1 2 3 B C E B C E B C E Packing Tube Tube Bulk 1 of 4 QW-R203-039.C C6084 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25℃) PARAMETER SYMBOL RATINGS UNIT 1.5 Collector-Base Voltage VCBO KV 1.4 Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 5 V TO-220 5 A IC 3 TO-126 Collector Current TO-220 12 ICP A TO-126 6 TO-220 1.75 W Collector Dissipation PC TO-126 1.25 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. TO-220 TO-126 ELECTRICAL CHARACTERISTICS (TA=25℃) PARAMETER Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector-Emitter TO-220 Saturation Voltage TO-126 Base-Emitter Saturation TO-220 Voltage TO-126 TO-220/TO-126 DC Current Gain TO-220 TO-126 Fall Time SYMBOL ICBO ICES VCEO(SUS) IEBO VCE(SAT) VBE(SAT) hFE1 hFE2 TF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VCB=800V, IE=0A VCE=1500V, RBE=0Ω IC=10mA, IB=0A VBE=4V, IC=0A IC=2.7A, IB=0.54A IC=1.4A, IB=0.27A IC=2.7A, IB=0.54A MIN 800 1.5 IC=1.4A, IB=0.27A VCE=5V, IC=0.5A VCE=5V, IC=3A 10 VCE=5V, IC=1.8A 5 IC=1.8A, IB1=0.36A, IB2=-0.72A TYP MAX UNIT 10 µA 1.0 mA V 1.0 mA 3 V 3 1.5 5 V 7 7 0.2 µS 2 of 4 QW-R203-039.C C6084 NPN SILICON TRANSISTOR TEST CIRCUIT PW=20µs D.C.≤1% IB1 OUTPUT IB2 RB INPUT RL=111Ω VR 50Ω 100µF VBE=-5V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 470µF VCC=200V 3 of 4 QW-R203-039.C C6084 TYPICAL CHARACTERISTICS Collector Current VS. BVCES 1.2 1.0 0.8 0.6 0.4 0.2 0 Collector-Emitter Breakdown Voltage ,BVCES (kV) 1.2 1.0 0.8 0.6 0.4 0.2 0 20 10 5 15 0 Emitter-Base Breakdown Voltage ,BVEBO (V) 0.8 0.6 0.4 0.2 14 Collector Current , IC(mA) 1.4 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Collector-Base Breakdown Voltage ,BVCBO (kV) Emitter Current VS. BVEBO 1.6 1.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1.8 Collector Current VS. BVCBO 1.4 Collector Current , IC(mA) Collector Current , IC(mA) 1.4 Emitter Current , IE(mA) NPN SILICON TRANSISTOR Collector Current VS. VCEO(SUS) 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Collector-Emitter Voltage ,VCEO(SUS) (kV) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-039.C