ACE1820B N-Channel Enhancement Mode Power MOSFET Description ACE1820B uses advanced trench technology and design to provide excellent R DS(ON) gate charge. It can be used in a wide variety of applications Features VDS=200V, ID=18A RDS(ON)1@VGS=10V, MAX 170mΩ RDS(ON)1@VGS=4.5V, MAX 180mΩ Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous)*AC TA=25℃ ID TA=100℃ 18 A 11.7 Single Pulse Avalanche Energy3 EAS 15 mJ Drain Current (Pulsed)*B IDM 40 A PD 83 W TJ/TSTG -55~150 ℃ Power Dissipation TA=25℃ Operating temperature / storage temperature A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Packaging Type TO-220 VER 1.1 1 ACE1820B N-Channel Enhancement Mode Power MOSFET Ordering information ACE1820B XX + H Halogen - free Pb - free ZM: TO-220 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Static Min V(BR)DSS VGS = 0V, ID = 250μA 200 Zero Gate Voltage Drain Current IDSS1 VDS = 160V, VGS = 0V Gate Threshold Voltage VGS(TH) VGS = VDS , IDS= 250μA Gate Leakage Current IGSS Drain-Source Breakdown Voltage Drain-Source On-state Resistance RDS(on) Typ Max Unit V 1 μA 2.5 V VGS= ±20V , VDS=0V ±100 nA VGS = 10V , ID= 9A 170 VGS = 4.5V , ID= 9A 180 Forward Trans Conductance gFS VDS= 25V , ID= 57A Diode Forward Voltage VSD ISD= 40A , VGS= 0V Diode Forward Current IS 1.2 1.6 mΩ 22 S 1.2 V 18 A Switching Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Qg Qgs Qgd VDS= 80V, ID= 9A, VGS= 10V td( on ) tr td( off ) tf VDD=50V,ID= 9A, VGS= 10V,RGEN= 3.3Ω 45 9 10.5 13 8.2 25 11 nC nC nC ns ns ns ns Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS=25V,VGS= 0V, f= 1.0MHz 2.47 109 70 pF pF pF Gate resistance Rg VGS =0V, VDS =0V, F=1MHz 2 Ω VER 1.1 2 ACE1820B N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics VER 1.1 3 ACE1820B N-Channel Enhancement Mode Power MOSFET VER 1.1 4 ACE1820B N-Channel Enhancement Mode Power MOSFET Packing Information TO-220 VER 1.1 5 ACE1820B N-Channel Enhancement Mode Power MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6