ON FODM217A Single channel, dc sensing input, phototransistor optocoupler Datasheet

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FODM217 Series
Single Channel, DC Sensing Input,
Phototransistor Optocoupler In
Half-Pitch Mini-Flat 4-Pin Package
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The FODM217 Series single channel, DC sensing input, optocoupler
consists of one gallium arsenide (GaAs) infrared light emitting diode
optically coupled to one phototransistor, in a compact, half-pitch,
mini-flat, 4-pin package. The input-output isolation voltage, VISO, is
rated at 3,750 VACRMS.
Features
• Current Transfer Ratio Ranges from 80 to 600% at IF = 5 mA,
VCE = 5 V, TA = 25ºC
- FODM217A - 80 to 160%
- FODM217B - 130 to 260%
- FODM217C - 200 to 400%
- FODM217D - 300 to 600%
• Safety and Regulatory Approvals:
- UL1577, 3750 VACRMS for 1 min
- DIN EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage
• Applicable to Infrared Ray Reflow, 260ºC
SOP 4 PINS
MARKING DIAGRAM
Typical Applications
•
•
•
•
•
Primarily Suited for DC-DC Converters
For Ground Loop Isolation, Signal to Noise Isolation
Communications – Adapters, Chargers
Consumer – Appliances, Set Top Boxes
Industrial – Power Supplies, Motor Control, Programmable Logic
Control
1.
2.
3.
4.
5.
6.
F = Corporate Logo
217x = Device Number
V = DIN EN/IEC60747-5-5 Option
X = One-Digit Year Code
YY = Digit Work Week
R1 = Assembly Package Code
PIN CONNECTIONS
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
January 2017 - Rev. P0
1
Publication Order Number:
FODM217/D
FODM217 Series
SAFETY AND INSULATIONS RATING
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the
safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
< 150 VRMS
I–IV
< 300 VRMS
I–III
Climatic Classification
55/110/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and
Sample Test with tm = 10 s, Partial Discharge < 5 pC
904
Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100%
Production Test with tm = 1 s, Partial Discharge < 5 pC
1060
Vpeak
VIORM
Maximum Working Insulation Voltage
565
Vpeak
VIOTM
Highest Allowable Over-Voltage
4,000
Vpeak
External Creepage
≥5
mm
External Clearance
≥5
mm
VPR
Parameter
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.4
mm
TS
Case Temperature (Note 1)
150
°C
Input Current (Note 1)
200
mA
Output Power (Note 1)
300
mW
> 109
Ω
IS,INPUT
PS,OUTPUT
RIO
Insulation Resistance at TS, VIO = 500 V (Note 1)
1. Safety limit values – maximum values allowed in the event of a failure.
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2
FODM217 Series
ABSOLUTE MAXIMUM RATINGS (Note 2)
TA = 25°C unless otherwise specified.
Symbol
Parameter
Value
Units
TSTG
Storage Temperature
-55 to +150
°C
TOPR
Operating Temperature
-55 to +110
°C
Junction Temperature
-55 to +125
°C
260 for 10 sec
°C
TJ
TSOL
Lead Solder Temperature
(Refer to Reflow Temperature Profile)
Emitter
IF(average)
50
mA
Peak Forward Current (1 µs pulse, 300 pps)
1
A
Reverse Input Voltage
6
V
Power Dissipation (Note 3)
70
mW
Continuous Collector Current
50
mA
VCEO
Collector-Emitter Voltage
80
V
VECO
Emitter-Collector Voltage
7
V
IF(peak)
VR
PDLED
Continuous Forward Current
Detector
IC(average)
P DC
Collector Power Dissipation (Note 3)
150
mW
2. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
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3
FODM217 Series
TA = 25°C unless otherwise specified
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
1.4
V
10
µA
250
pF
Emitter
VF
Forward Voltage
IF = 20 mA
IR
Reverse Current
VR = 4 V
CT
Terminal Capacitance
V = 0 V, f = 1 kHz
1.2
30
Detector
BVCEO
BVECO
ICEO
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector Dark Current
IC = 0.1 mA, IF = 0 mA
80
V
IE = 10 µA, IF = 0 mA
7
V
VCE = 50 V, IF = 0 mA
100
nA
TRANSFER CHARACTERISTICS
TA=25ºC unless otherwise specified
Symbol
Parameter
Device
CTRCE
Current Transfer Ratio
(collector-emitter)
Conditions
FODM217A
IC
Collector Current
CTR(SAT) Saturated Current Transfer
Ratio
Collector Current
IC(SAT)
VCE(SAT)
Collector-Emitter
Saturation Voltage
Min.
Typ.
Max.
80
160
130
260
FODM217C
200
400
FODM217D
300
600
4
30
FODM217B
IF = 5 mA, VCE = 5 V
Units
%
All
IF = 5 mA, VCE = 5 V
All
IF = 8 mA, VCE = 0.4 V
60
%
All
IF = 8 mA, VCE = 0.4 V
4.8
mA
All
IF = 8 mA, IC = 2.4 mA
mA
0.4
V
Max.
Units
SWITCHING CHARACTERISTICS
TA=25ºC unless otherwise specified
Symbol
tON
Parameter
Conditions
Min.
IC = 2 mA, VCE = 10 V,
Turn On Time
Typ.
3
µs
3
µs
2
µs
3
µs
RL = 100 Ω
tOFF
tR
IC = 2 mA, VCE = 10 V,
Turn Off Time
RL = 100 Ω
Output Rise Time (10% -90%)
IC = 2 mA, VCE = 10 V,
RL = 100 Ω
tF
Output Fall Time (90% -10%)
IC = 2 mA, VCE = 10 V,
RL = 100 Ω
ISOLATION CHARACTERISTICS
Symbol
Parameter
VISO
Input-Output Isolation Voltage
RISO
Isolation Resistance
CISO
Isolation Capacitance
Conditions
Min.
Freq = 60 Hz, t = 1.0 min,
II-O ≤ 10 µA (Note 4,5)
3,750
VI-O = 500 V (Note 4)
Frequency = 1 MHz
Typ.
Units
VACRMS
Ω
5 x 1010
0.6
4. Device is considered a two terminal device: Pin 1 and 2 are shorted together and Pins 3 and 4 are shorted together.
5. 3,750 VACRMS for 1 minute duration is equivalent to 4,500 VACRMS for 1 second duration.
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4
Max.
1.0
pF
FODM217 Series — Single Channel Phototransistor Optocoupler In Half-Pitch Small Outline SO4 Package
ELECTRICAL CHARACTERISTICS
FODM217 Series
160
PDLED - LED POWER DISSIPATION (mW)
PDC - COLLECTOR POWER DISSIPATION (mW)
TYPICAL CHARACTERISTICS
140
120
100
80
60
40
20
0
0
25
50
75
100
80
60
40
20
0
125
0
TA - AMBIENT TEMPERATURE (°C)
ΔVF/ΔTA - FORWARD VOLTAGE
IF - FORWARD CURRENT (mA)
100
75°C
110°C
-55°C
25°C
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
75
100
125
1.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
1
2.0
10
100
IF - FORWARD CURRENT (mA)
VF - FORWARD VOLTAGE (V)
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Forward Voltage Temperature Coefficient vs.
Forward Current
5
50
IC - COLLECTOR CURRENT (mA)
VCE - COLLECTOR-EMITTER VOLTAGE (V)
50
Figure 2. LED Power Dissipation vs. Ambient
Temperature
TEMPERATURE COEFFICIENT (mV/°C)
Figure 1. Collector Power Dissipation vs. Ambient
Temperature
10
25
TA - AMBIENT TEMPERATURE (°C)
0.5 mA
4
1 mA
3 mA
3
5 mA
7 mA
10 mA
2
1
0
40
30
IF = 5 mA
20
10
0
0
5
10
15
20
0
IF - FORWARD CURRENT (mA)
5
10
VCE - COLLECTOR-EMITTER VOLTAGE (V)
Figure 5. Collector Emitter Voltage vs. Forward Current
Figure 6. Collector Current vs. Collector-Emitter Voltage
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5
FODM217 Series
50
0.1
IC - COLLECTOR CURRENT (A)
IC - COLLECTOR CURRENT (mA)
10 V
40
30
IF = 5 mA
20
10
0
0.0
0.5
1.0
VCE = 0.4 V
0.01
0.001
0.0001
0.0001
0.001
VCE - COLLECTOR-EMITTER VOLTAGE (V)
1E-6
VCE = 48 V
24 V
1E-8
5V
10 V
1E-10
1E-11
-25
0
25
50
75
1000
100
10 V
5V
VCE = 0.4 V
100
10
0.0001
0.001
TA - AMBIENT TEMPERATURE (°C)
IC - COLLECTOR CURRENT (mA)
100
0.16
SATURATION VOLTAGE (V)
VCE(SAT) - COLLECTOR-EMITTER
0.1
Figure 10. Current Transfer Ratio vs. Forward Current
0.18
0.14
0.12
IF = 8 mA
IC = 2.4 mA
0.08
IF = 1 mA
0.06
IC = 0.2 mA
0.04
IF = 20 mA
0.02
IC = 1 mA
0.00
-25
0.01
IF - FORWARD CURRENT (A)
Figure 9. Collector Dark Current vs. Ambient
Temperature
0.10
0.1
Figure 8. Collector Current vs. Forward Current
CTR - CURRENT TRANSFER RATIO (%)
ICEO - COLLECTOR DARK CURRENT (A)
1E-5
1E-9
0.01
IF - FORWARD CURRENT (mA)
Figure 7. Collector Current vs. Small Collector-Emittter
Voltage
1E-7
5V
0
25
50
75
20 mA
10 mA
10
1
1 mA
IF = 0.5 mA
0.1
-25
100
5 mA
TA - AMBIENT TEMPERATURE (°C)
0
25
50
75
100
TA - AMBIENT TEMPERATURE (°C)
Figure 11. Collector-Emitter Saturation vs. Ambient
Temperature
Figure 12. Collector Current vs. Ambient Temperature
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6
FODM217 Series
1000
100
VCC = 10 V
TA = 25 °C
IC = 2 mA
tOFF
t - SWITCHING TIME (µs)
t - SWITCHING TIME (µs)
VCC = 5 V
IF = 16 mA
100
tF
10
tON
1
RL = 100 
tON
tOFF
10
tR
tF
tR
0.1
1
10
1
-25
100
0
RL - LOAD RESISTANCE (k)
25
50
75
100
TA - AMBIENT TEMPERATURE (°C)
Figure 13. Switching Time vs. Load Resistance
Figure 14. Switching Time vs. Ambient Temperature
TEST CIRCUIT
VCC
RL
1
4
VO
IF
tR
tF
VO
90%
IF Monitor
2
3
10%
RM
tON
Figure 15. Test Circuit for Switching Time
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7
tOFF
FODM217 Series
REFLOW PROFILE
Profile Freature
Pb-Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60–120 seconds
Ramp-up Rate (tL to tP)
3°C/second max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60–150 seconds
260°C +0°C / –5°C
Peak Body Package Temperature
Time (tP) within 5°C of 260°C
30 seconds
Ramp-down Rate (TP to TL)
6°C/second max.
Time 25°C to Peak Temperature
8 minutes max.
Figure 36. Reflow Profile
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8
FODM217 Series
ORDERING INFORMATION (Note 6)
Part Number
Package
Packing Method
FODM217A
SOP 4-Pin
Tube (100 units)
FODM217AR2
SOP 4-Pin
Tape and Reel (3000 units)
FODM217AV
SOP 4-Pin, DIN EN/IEC60747-5-5 Option (pending approval)
Tube (100 units)
FODM217AR2V
SOP 4-Pin, DIN EN/IEC60747-5-5 Option (pending approval)
Tape and Reel (3000 units)
6. The product orderable part number system listed in this table also applies to the FODM217B, FODM217C, and FODM217D products.
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9
1.27±0.25
3
4
0.61
7.87 4.83
4.40±0.20
1.27
1.52
1
2
0.40±0.10
TOP VIEW
LAND PATTERN RECOMMENDATION
2.60±0.30
5.44±0.30
0.25±0.05
2.00±0.20
0.1±0.10
DETAIL A
SIDE VIEW
FRONT VIEW
GAGE
PLANE
4°
MIN 0.5
SEATING
PLANE
1.30±0.30
DETAIL A
7±0.45
NOTES:
A. NO INDUSTRY STANDARD APPLIES TO
THIS PACKAGE
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS
D. DRAWING FILENAME: MKT-MFP04DrevA
0.127
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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