UMS CHA5215A 5.8ghz medium power amplifier Datasheet

CHA5215a
5.8GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
Main Features
■ Wide operating frequency range
■ High saturated output power
■ High linearity
■ High gain
■ High dynamic gain control
■ Output power monitor
■ Chip dimensions : 2.47 x 1.27 x 0.10 mm
Gc
Vg
Vd
Pc
IN
OUT
Ref
Block diagram
30
25
Gain (dB)
The CHA5215a is a MMIC multifunction
integrating a 3-stage medium power
amplifier, a gain control and an output
detector. A high saturated output power
allows a linear operating point for
multichannel communication applications.
The output power can be controlled thanks
to the combination of a detected output
voltage and an important gain control
dynamic range.
The circuit is manufactured with a standard
0.7µm implanted power MESFET, air
bridges, via holes through the substrate
and electron beam gate lithography
process. It is supplied in chip form or in
ceramic flat-pack package.
20
15
10
5
0
5
5,2
5,4
5,6
5,8
6
6,2
6,4
6,6
6,8
Frequency (GHz)
Main Characteristics
Tamb = +25°C
Symbol
Fop
Gmax
∆G
Psat
Parameter
Operating frequency range
Min
Typ
Max
Unit
5
5.8
7
GHz
Maximum gain
Gain control range
10
Saturated output power
25
dB
15
dB
27
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA52150160 -08-Jun-00
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
7
5.8GHz Medium Power Amplifier
CHA5215a
Electrical Characteristics
Tamb = +25°C
Symbol
Test
Conditions
Parameter
Min.
Typ.
Max
Unit
5
5.8
7
GHz
Fop
Operating frequency range
Glin
Linear gain (Gc=-5V)
Gdr
Gain control dynamic range
10
Gc
Gain control voltage
-5
25
dB
15
dB
0
V
Pout
Saturated output power
27
dBm
Sdet
Output power monitor sensitivity
-5
mV/mW
Vref
Reference monitor voltage
550
mV
RLin
Input return loss (full band) (2)
12
dB
Output return loss (2)
6
dB
Vd
Positive supply voltage (1)
9
V
Id
Positive supply current
330
Vg
Negative supply voltage
-1.4
Ig
Negative supply current
RLout
7
400
mA
V
15
mA
(1) Depending on the application a trade-off can be obtained between linearity and power
consumption by adjusting the positive supply voltage (from 6 to 9V).
(2) The return loss can be improved by using a simple matching network (available on request).
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd
Positive supply voltage
10
V
Vg
Negative supply voltage
-6 to 0 (3)
V
Gc
Gain control voltage
Pin
Maximum peak input power overdrive (2)
Top
Tstg
-6 to 0.6
20
dBm
Operating temperature range
-50 to +70
°C
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage
(2) Duration < 1s
(3) Choose Vg in order to have Id ≤ 400mA when Vd is applied
Ref. : DSCHA52150160 -08-Jun-00
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
5.8 GHz Medium Power Amplifier
CHA5215a
Typical On Wafer Scattering Parameters
Bias Conditions : Vd = +5V Id=330mA (Vg = -1.4V) Gc = -5V
Freq.
GHz
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
7
S11
dB
-9.23
-9.05
-8.84
-8.65
-8.44
-8.25
-8.07
-7.93
-7.89
-7.99
-8.27
-8.64
-9.03
-9.39
-9.73
-10.1
-10.52
-11
-11.56
-12.09
-12.62
-13.05
-13.21
-13.14
-12.77
-12.18
-11.48
-10.65
-9.76
-8.9
-8.03
S11
/°
5.6
0.4
-5
-10.8
-16.8
-23.2
-30.1
-37.5
-45.4
-53.7
-61.5
-68.7
-74.9
-80.9
-86.6
-92.4
-97.9
-103.1
-107.6
-11.1
-113.2
-114.5
-114.3
-114.1
-114.4
-115.7
-117.9
-121.7
-126.9
-133.7
-141.9
Ref. : DSCHA52150160 -08-Jun-00
S12
dB
-47.73
-48.42
-48.78
-50.4
-50.72
-51.79
-51.93
-52.56
-52.92
-53.56
-54.49
-55.71
-57.22
-58.74
-60.04
-60.95
-61.36
-61.75
-61.42
-60.99
-60.57
-60.34
-59.89
-59.38
-58.47
-57.61
-56.81
-55.59
-55.19
-54.39
-53.67
S12
/°
162.4
142.3
129.4
113.1
101.3
88.3
73.9
59.8
41.2
22.4
-0.2
-22.4
-45.7
-69.8
-93.3
-119.4
-144.1
-168
170.3
150.8
134.4
117.6
105.9
93.5
82.1
70.1
59.1
44.2
31.3
17.7
0.7
S21
dB
0.33
2.86
5.44
7.93
10.36
12.76
15.1
17.38
19.49
21.31
22.75
23.74
24.35
24.69
24.83
24.88
24.86
24.77
24.65
24.49
24.33
24.19
24.09
24.03
23.98
24.02
24.09
24.2
24.37
24.52
24.65
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S21
/°
-78.2
-78.2
-89.7
-89.7
-110.2
-110.2
-136.9
-122.7
-171.3
-153.1
146.5
168.2
102.9
124.4
63.8
82.7
29.1
46.1
-2.4
13
-31
-17.1
-57.5
-44.5
-82.9
-70.3
-108.1
-95.4
-134.9
-121.1
-165.1
S22
dB
-8.28
-7.72
--7.46
-7.22
-6.96
-6.69
-6.38
-6.1
-5.94
-6.03
-6.46
-7.27
-8.33
-9.44
-10.35
-10.93
-11.21
-11.25
-11.13
-10.98
-10.74
-10.54
-10.35
-10.15
-9.92
-9.63
-9.27
-8.79
-8.35
-7.86
-7.4
S22
/°
105.5
90.6
77.4
-64.7
52.6
52.6
-27.5
13.8
-0.17
-15.9
-30.7
-44
-54.2
-61
-64.5
-66
-66.8
-67.8
-68.9
-70.7
-72.5
-74.4
-76.4
-78.1
-79.2
-80.5
-81.7
-83.3
-85.5
-88.3
-92
Specifications subject to change without notice
5.8GHz Medium Power Amplifier
CHA5215a
Typical On Wafer Scattering Parameters
Bias Conditions : Vd = +5V Id=330mA (Vg = -1.4V) Gc = 0V
Freq.
GHz
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
7
S11
dB
-22.97
-22.15
-21.67
-21.35
-21.16
-21.03
-20.94
-21
-21.08
-21.27
-21.5
-21.8
-22.06
-22.27
-22.47
-22.59
-22.69
-22.8
-22.9
-23.14
-23.38
-23.7
-24.15
-24.62
-25.03
-25.04
-24.31
-22.84
-21.18
-19.83
-18.99
S11
/°
169.9
159
149.3
141.2
133.9
127.4
121.3
115.9
110.6
106.4
102.4
99.6
97.1
95.6
94.1
92.9
91.6
90.4
89
88
86.6
86.9
87
89.3
94.1
102.4
110.2
115.5
115.4
111
105.2
Ref. : DSCHA52150160 -08-Jun-00
S12
dB
-34.74
-36.83
-39.2
-41.02
-42.96
-44.55
-46.11
-47.53
-48.79
-50.14
-51.39
-52.81
-54.39
-55.86
-57.39
-58.53
-59.33
-59.48
-59.27
58.76
-58.03
-57.17
-56.52
-55.51
-54.47
-53.41
-52.5
-51.5
-51.21
-51.51
-51.88
S12
/°
25.6
7.2
-7.2
-21.2
-32.2
-44.2
-54.2
-66.2
-77.7
-91.6
-105.3
-121.3
-139.6
-158.3
-177.5
161.5
140.9
119.9
101.7
84.8
68.8
53.3
39.9
27.7
16
1
-14.7
-30.3
-50.7
-68.5
-84.2
S21
dB
-6.22
-4.74
-3.27
-1.91
-0.62
0.63
1.84
3.01
4.12
5.13
5.99
6.67
7.14
7.42
7.55
7.58
7.57
7.58
7.62
7.72
7.91
8.19
8.56
9.02
9.55
10.1
10.6
10.89
10.83
10.31
9.39
4/12
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S21
/°
-172.9
-179.4
172
162.4
152
141.2
129.6
117.4
104.3
90.4
75.7
60.5
45.1
30.1
15.9
2.6
-10
-21.7
-32.9
-43.7
-54.2
-64.9
-75.9
-87.5
-100.1
-114.2
-129.9
-147.6
-166.8
173.9
155.9
S22
dB
-9.34
-8.85
-8.7
-8.55
-8.42
-8.26
-8.04
-7.8
-7.56
-7.39
-7.32
-7.43
-7.74
-8.24
-8.88
-9.62
-10.38
-11.1
-11.7
-12.14
-12.31
-12.23
-11.83
-11.16
-10.23
-9.15
-8.02
-7.02
-6.33
-6.06
-6.14
S22
/°
98.1
84.5
72.1
60.6
49.6
38.7
27.7
16.4
4.8
-7.3
-19.6
-31.8
-43.2
-53.6
-62.2
-69
-73.8
-76.7
-77.5
-76.8
-74.7
-72.2
-69.4
-67.3
-66.4
-67.5
-70.8
-76.5
-84.2
-92.3
-99.7
Specifications subject to change without notice
5.8 GHz Medium Power Amplifier
CHA5215a
Typical on Wafer Measurements
Gain (dB)
Bias Conditions : Vd = +5V, Id=330mA (Vg = -1.4V)
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
Gmax
Gmin
5
5,2
5,4
5,6
5,8
6
6,2
6,4
6,6
6,8
7
Frequency (GHz)
0
0
-2
Output return loss (dB)
Input return loss (dB)
-5
-10
-15
Gmax
Gmin
-20
-25
-4
-6
-8
-10
-12
-14
G max
G min
-16
-18
-30
-20
5
5,2
5,4
5,6
5,8
6
6,2
6,4
6,6
6,8
7
Frequency (GHz)
Ref. : DSCHA52150160 -08-Jun-00
5
5,2
5,4
5,6
5,8
6
6,2
6,4
6,6
6,8
7
F requency (G H z)
5/12
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
5.8GHz Medium Power Amplifier
CHA5215a
Typical Packaged Device Measurements
1. Output power monitor characteristic
Measurement conditions
Bias : Vd = +9V, Id=330mA (Vg = -1.4V)
Input signal : non-modulated signal,
Fin = 5.8GHz, Pin = -30dBm
0,5
Detected voltage ( V )
0,25
0
-0,25
-0,5
-0,75
-1
10
12
14
16
18
20
22
24
26
28
30
Pout ( dBm )
2. Gain control characteristic
Measurement conditions
Bias : Vd = +9V, Id=330mA (Vg = -1.4V)
Input signal : non-modulated signal,
Fin = 5.8GHz, Pin = -30dBm
30
25
Gain (dB)
20
15
10
5
0
-5
-4
-3
-2
-1
0
Gain control (V)
Ref. : DSCHA52150160 -08-Jun-00
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Specifications subject to change without notice
5.8 GHz Medium Power Amplifier
CHA5215a
3. Linearity characteristic
Measurement conditions
Bias : Vd = +9V, Id=330mA (Vg = -1.4V)
Input signal : amplitude modulated signal,
Fcarrier = Fo = 5.8GHz, Pcarrier = 4.8dBm
Fm = 500kHz, modulation index = 0.7
Pout at Fo (dBm), Mod. index (dB)
25
Pout at Fo (dBm)
[Pout at Fo +/- fm] / [Pout at Fo] (dBc)
30
10
5.8/-50°
5.8015
5.802
5.8025
5.803
5.8035
-10
-30
-50
-70
-3
-2
-1
Gain control (Volts)
10
5
5.8/-50°
0
5.8005
-5
-10
-3
0
-2
-1
0
Gain control (Volts)
25
Pout at Fo (dBm), Mod. index (dB)
30
Pout at Fo (dBm)
[Pout at Fo +/- fm] / [Pout at Fo] (dBc)
15
-15
-90
10
5.8/+25°C
5.8005
5.8015
5.802
5.025
5.803
-10
-30
-50
-70
20
15
10
5
5.8/+25°C
0
5.8005
-5
-10
-15
-90
-5
-4
-3
-2
Gain control (Volts)
-1
-5
0
-4
-3
-2
-1
0
Gain control (Volts)
25
Pout at Fo (dBm), Mod. index (dB)
30
Pout at Fo (dBm)
[Pout at Fo +/- fm] / [Pout at Fo] (dBc)
20
10
5.8/+70°
5.8005
5.8015
5.802
5.8025
5.803
-10
-30
-50
-70
20
15
10
5
5.8/+70°
0
5.8005
-5
-10
-15
-90
-5
-4
-3
-2
Gain control (Volts)
Ref. : DSCHA52150160 -08-Jun-00
-1
0
-5
-4
-3
-2
-1
Gain control (Volts)
7/12
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
0
5.8GHz Medium Power Amplifier
CHA5215a
Chip Pad Allocation
Gc
Vg
Vd
Vd
Pc
IN
OUT
CHA5215a
Ref
Input And Output Pin References
Pin
Description
IN
RF signal input
Gc
Gain control input
Vg
Negative supply voltage
Vd
Positive supply voltage
Pc
Power monitor output
OUT
RF signal output
Ref
Monitor reference output
Ref. : DSCHA52150160 -08-Jun-00
8/12
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
5.8 GHz Medium Power Amplifier
CHA5215a
Typical Bias Configuration
The typical bias voltage applied to the chip is Vd = 9V and Id=330mA (Vg = -1.4V)
Choose Vg in order to have Id around 330mA. Maximum Id is 400mA.
Do not apply Vd without Vg.
10nF
Gc
Vg
Vd
10nF
Pc
IN
OUT
CHA5215a
Ref
Chip Mechanical Data
CHA5215a
Chip size 2470 µm ± 20µm x 1270 µm ± 20µm
Thickness: 100µm ± 10µm
Ref. : DSCHA52150160 -08-Jun-00
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
5.8GHz Medium Power Amplifier
CHA5215a
Package Mechanical Data (FK)
Package Pin Allocation (FK)
1
2
3
4
5
6
7
Ref. : DSCHA52150160 -08-Jun-00
Pc
Vd
Vg
Gc
IN
Ref
OUT
Power monitor output
Positive supply voltage
Negative supply voltage
Gain control input
RF signal input
Monitor reference output
RF signal output
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Specifications subject to change without notice
5.8 GHz Medium Power Amplifier
Ref. : DSCHA52150160 -08-Jun-00
11/12
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5215a
Specifications subject to change without notice
CHA5215a
5.8GHz Medium Power Amplifier
Ordering Information
Chip form
: CHA5215a99F/00
Flatpack package
: CHA5215aFKF/23
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA52150160 -08-Jun-00
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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