CHA5215a 5.8GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Main Features ■ Wide operating frequency range ■ High saturated output power ■ High linearity ■ High gain ■ High dynamic gain control ■ Output power monitor ■ Chip dimensions : 2.47 x 1.27 x 0.10 mm Gc Vg Vd Pc IN OUT Ref Block diagram 30 25 Gain (dB) The CHA5215a is a MMIC multifunction integrating a 3-stage medium power amplifier, a gain control and an output detector. A high saturated output power allows a linear operating point for multichannel communication applications. The output power can be controlled thanks to the combination of a detected output voltage and an important gain control dynamic range. The circuit is manufactured with a standard 0.7µm implanted power MESFET, air bridges, via holes through the substrate and electron beam gate lithography process. It is supplied in chip form or in ceramic flat-pack package. 20 15 10 5 0 5 5,2 5,4 5,6 5,8 6 6,2 6,4 6,6 6,8 Frequency (GHz) Main Characteristics Tamb = +25°C Symbol Fop Gmax ∆G Psat Parameter Operating frequency range Min Typ Max Unit 5 5.8 7 GHz Maximum gain Gain control range 10 Saturated output power 25 dB 15 dB 27 dBm ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. : DSCHA52150160 -08-Jun-00 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 7 5.8GHz Medium Power Amplifier CHA5215a Electrical Characteristics Tamb = +25°C Symbol Test Conditions Parameter Min. Typ. Max Unit 5 5.8 7 GHz Fop Operating frequency range Glin Linear gain (Gc=-5V) Gdr Gain control dynamic range 10 Gc Gain control voltage -5 25 dB 15 dB 0 V Pout Saturated output power 27 dBm Sdet Output power monitor sensitivity -5 mV/mW Vref Reference monitor voltage 550 mV RLin Input return loss (full band) (2) 12 dB Output return loss (2) 6 dB Vd Positive supply voltage (1) 9 V Id Positive supply current 330 Vg Negative supply voltage -1.4 Ig Negative supply current RLout 7 400 mA V 15 mA (1) Depending on the application a trade-off can be obtained between linearity and power consumption by adjusting the positive supply voltage (from 6 to 9V). (2) The return loss can be improved by using a simple matching network (available on request). Absolute Maximum Ratings (1) Tamb = +25°C Symbol Parameter Values Unit Vd Positive supply voltage 10 V Vg Negative supply voltage -6 to 0 (3) V Gc Gain control voltage Pin Maximum peak input power overdrive (2) Top Tstg -6 to 0.6 20 dBm Operating temperature range -50 to +70 °C Storage temperature range -55 to +155 °C (1) Operation of this device above anyone of these parameters may cause permanent damage (2) Duration < 1s (3) Choose Vg in order to have Id ≤ 400mA when Vd is applied Ref. : DSCHA52150160 -08-Jun-00 2/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 5.8 GHz Medium Power Amplifier CHA5215a Typical On Wafer Scattering Parameters Bias Conditions : Vd = +5V Id=330mA (Vg = -1.4V) Gc = -5V Freq. GHz 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 7 S11 dB -9.23 -9.05 -8.84 -8.65 -8.44 -8.25 -8.07 -7.93 -7.89 -7.99 -8.27 -8.64 -9.03 -9.39 -9.73 -10.1 -10.52 -11 -11.56 -12.09 -12.62 -13.05 -13.21 -13.14 -12.77 -12.18 -11.48 -10.65 -9.76 -8.9 -8.03 S11 /° 5.6 0.4 -5 -10.8 -16.8 -23.2 -30.1 -37.5 -45.4 -53.7 -61.5 -68.7 -74.9 -80.9 -86.6 -92.4 -97.9 -103.1 -107.6 -11.1 -113.2 -114.5 -114.3 -114.1 -114.4 -115.7 -117.9 -121.7 -126.9 -133.7 -141.9 Ref. : DSCHA52150160 -08-Jun-00 S12 dB -47.73 -48.42 -48.78 -50.4 -50.72 -51.79 -51.93 -52.56 -52.92 -53.56 -54.49 -55.71 -57.22 -58.74 -60.04 -60.95 -61.36 -61.75 -61.42 -60.99 -60.57 -60.34 -59.89 -59.38 -58.47 -57.61 -56.81 -55.59 -55.19 -54.39 -53.67 S12 /° 162.4 142.3 129.4 113.1 101.3 88.3 73.9 59.8 41.2 22.4 -0.2 -22.4 -45.7 -69.8 -93.3 -119.4 -144.1 -168 170.3 150.8 134.4 117.6 105.9 93.5 82.1 70.1 59.1 44.2 31.3 17.7 0.7 S21 dB 0.33 2.86 5.44 7.93 10.36 12.76 15.1 17.38 19.49 21.31 22.75 23.74 24.35 24.69 24.83 24.88 24.86 24.77 24.65 24.49 24.33 24.19 24.09 24.03 23.98 24.02 24.09 24.2 24.37 24.52 24.65 3/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 S21 /° -78.2 -78.2 -89.7 -89.7 -110.2 -110.2 -136.9 -122.7 -171.3 -153.1 146.5 168.2 102.9 124.4 63.8 82.7 29.1 46.1 -2.4 13 -31 -17.1 -57.5 -44.5 -82.9 -70.3 -108.1 -95.4 -134.9 -121.1 -165.1 S22 dB -8.28 -7.72 --7.46 -7.22 -6.96 -6.69 -6.38 -6.1 -5.94 -6.03 -6.46 -7.27 -8.33 -9.44 -10.35 -10.93 -11.21 -11.25 -11.13 -10.98 -10.74 -10.54 -10.35 -10.15 -9.92 -9.63 -9.27 -8.79 -8.35 -7.86 -7.4 S22 /° 105.5 90.6 77.4 -64.7 52.6 52.6 -27.5 13.8 -0.17 -15.9 -30.7 -44 -54.2 -61 -64.5 -66 -66.8 -67.8 -68.9 -70.7 -72.5 -74.4 -76.4 -78.1 -79.2 -80.5 -81.7 -83.3 -85.5 -88.3 -92 Specifications subject to change without notice 5.8GHz Medium Power Amplifier CHA5215a Typical On Wafer Scattering Parameters Bias Conditions : Vd = +5V Id=330mA (Vg = -1.4V) Gc = 0V Freq. GHz 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 7 S11 dB -22.97 -22.15 -21.67 -21.35 -21.16 -21.03 -20.94 -21 -21.08 -21.27 -21.5 -21.8 -22.06 -22.27 -22.47 -22.59 -22.69 -22.8 -22.9 -23.14 -23.38 -23.7 -24.15 -24.62 -25.03 -25.04 -24.31 -22.84 -21.18 -19.83 -18.99 S11 /° 169.9 159 149.3 141.2 133.9 127.4 121.3 115.9 110.6 106.4 102.4 99.6 97.1 95.6 94.1 92.9 91.6 90.4 89 88 86.6 86.9 87 89.3 94.1 102.4 110.2 115.5 115.4 111 105.2 Ref. : DSCHA52150160 -08-Jun-00 S12 dB -34.74 -36.83 -39.2 -41.02 -42.96 -44.55 -46.11 -47.53 -48.79 -50.14 -51.39 -52.81 -54.39 -55.86 -57.39 -58.53 -59.33 -59.48 -59.27 58.76 -58.03 -57.17 -56.52 -55.51 -54.47 -53.41 -52.5 -51.5 -51.21 -51.51 -51.88 S12 /° 25.6 7.2 -7.2 -21.2 -32.2 -44.2 -54.2 -66.2 -77.7 -91.6 -105.3 -121.3 -139.6 -158.3 -177.5 161.5 140.9 119.9 101.7 84.8 68.8 53.3 39.9 27.7 16 1 -14.7 -30.3 -50.7 -68.5 -84.2 S21 dB -6.22 -4.74 -3.27 -1.91 -0.62 0.63 1.84 3.01 4.12 5.13 5.99 6.67 7.14 7.42 7.55 7.58 7.57 7.58 7.62 7.72 7.91 8.19 8.56 9.02 9.55 10.1 10.6 10.89 10.83 10.31 9.39 4/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 S21 /° -172.9 -179.4 172 162.4 152 141.2 129.6 117.4 104.3 90.4 75.7 60.5 45.1 30.1 15.9 2.6 -10 -21.7 -32.9 -43.7 -54.2 -64.9 -75.9 -87.5 -100.1 -114.2 -129.9 -147.6 -166.8 173.9 155.9 S22 dB -9.34 -8.85 -8.7 -8.55 -8.42 -8.26 -8.04 -7.8 -7.56 -7.39 -7.32 -7.43 -7.74 -8.24 -8.88 -9.62 -10.38 -11.1 -11.7 -12.14 -12.31 -12.23 -11.83 -11.16 -10.23 -9.15 -8.02 -7.02 -6.33 -6.06 -6.14 S22 /° 98.1 84.5 72.1 60.6 49.6 38.7 27.7 16.4 4.8 -7.3 -19.6 -31.8 -43.2 -53.6 -62.2 -69 -73.8 -76.7 -77.5 -76.8 -74.7 -72.2 -69.4 -67.3 -66.4 -67.5 -70.8 -76.5 -84.2 -92.3 -99.7 Specifications subject to change without notice 5.8 GHz Medium Power Amplifier CHA5215a Typical on Wafer Measurements Gain (dB) Bias Conditions : Vd = +5V, Id=330mA (Vg = -1.4V) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Gmax Gmin 5 5,2 5,4 5,6 5,8 6 6,2 6,4 6,6 6,8 7 Frequency (GHz) 0 0 -2 Output return loss (dB) Input return loss (dB) -5 -10 -15 Gmax Gmin -20 -25 -4 -6 -8 -10 -12 -14 G max G min -16 -18 -30 -20 5 5,2 5,4 5,6 5,8 6 6,2 6,4 6,6 6,8 7 Frequency (GHz) Ref. : DSCHA52150160 -08-Jun-00 5 5,2 5,4 5,6 5,8 6 6,2 6,4 6,6 6,8 7 F requency (G H z) 5/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 5.8GHz Medium Power Amplifier CHA5215a Typical Packaged Device Measurements 1. Output power monitor characteristic Measurement conditions Bias : Vd = +9V, Id=330mA (Vg = -1.4V) Input signal : non-modulated signal, Fin = 5.8GHz, Pin = -30dBm 0,5 Detected voltage ( V ) 0,25 0 -0,25 -0,5 -0,75 -1 10 12 14 16 18 20 22 24 26 28 30 Pout ( dBm ) 2. Gain control characteristic Measurement conditions Bias : Vd = +9V, Id=330mA (Vg = -1.4V) Input signal : non-modulated signal, Fin = 5.8GHz, Pin = -30dBm 30 25 Gain (dB) 20 15 10 5 0 -5 -4 -3 -2 -1 0 Gain control (V) Ref. : DSCHA52150160 -08-Jun-00 6/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 5.8 GHz Medium Power Amplifier CHA5215a 3. Linearity characteristic Measurement conditions Bias : Vd = +9V, Id=330mA (Vg = -1.4V) Input signal : amplitude modulated signal, Fcarrier = Fo = 5.8GHz, Pcarrier = 4.8dBm Fm = 500kHz, modulation index = 0.7 Pout at Fo (dBm), Mod. index (dB) 25 Pout at Fo (dBm) [Pout at Fo +/- fm] / [Pout at Fo] (dBc) 30 10 5.8/-50° 5.8015 5.802 5.8025 5.803 5.8035 -10 -30 -50 -70 -3 -2 -1 Gain control (Volts) 10 5 5.8/-50° 0 5.8005 -5 -10 -3 0 -2 -1 0 Gain control (Volts) 25 Pout at Fo (dBm), Mod. index (dB) 30 Pout at Fo (dBm) [Pout at Fo +/- fm] / [Pout at Fo] (dBc) 15 -15 -90 10 5.8/+25°C 5.8005 5.8015 5.802 5.025 5.803 -10 -30 -50 -70 20 15 10 5 5.8/+25°C 0 5.8005 -5 -10 -15 -90 -5 -4 -3 -2 Gain control (Volts) -1 -5 0 -4 -3 -2 -1 0 Gain control (Volts) 25 Pout at Fo (dBm), Mod. index (dB) 30 Pout at Fo (dBm) [Pout at Fo +/- fm] / [Pout at Fo] (dBc) 20 10 5.8/+70° 5.8005 5.8015 5.802 5.8025 5.803 -10 -30 -50 -70 20 15 10 5 5.8/+70° 0 5.8005 -5 -10 -15 -90 -5 -4 -3 -2 Gain control (Volts) Ref. : DSCHA52150160 -08-Jun-00 -1 0 -5 -4 -3 -2 -1 Gain control (Volts) 7/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 0 5.8GHz Medium Power Amplifier CHA5215a Chip Pad Allocation Gc Vg Vd Vd Pc IN OUT CHA5215a Ref Input And Output Pin References Pin Description IN RF signal input Gc Gain control input Vg Negative supply voltage Vd Positive supply voltage Pc Power monitor output OUT RF signal output Ref Monitor reference output Ref. : DSCHA52150160 -08-Jun-00 8/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 5.8 GHz Medium Power Amplifier CHA5215a Typical Bias Configuration The typical bias voltage applied to the chip is Vd = 9V and Id=330mA (Vg = -1.4V) Choose Vg in order to have Id around 330mA. Maximum Id is 400mA. Do not apply Vd without Vg. 10nF Gc Vg Vd 10nF Pc IN OUT CHA5215a Ref Chip Mechanical Data CHA5215a Chip size 2470 µm ± 20µm x 1270 µm ± 20µm Thickness: 100µm ± 10µm Ref. : DSCHA52150160 -08-Jun-00 9/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 5.8GHz Medium Power Amplifier CHA5215a Package Mechanical Data (FK) Package Pin Allocation (FK) 1 2 3 4 5 6 7 Ref. : DSCHA52150160 -08-Jun-00 Pc Vd Vg Gc IN Ref OUT Power monitor output Positive supply voltage Negative supply voltage Gain control input RF signal input Monitor reference output RF signal output 10/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 5.8 GHz Medium Power Amplifier Ref. : DSCHA52150160 -08-Jun-00 11/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5215a Specifications subject to change without notice CHA5215a 5.8GHz Medium Power Amplifier Ordering Information Chip form : CHA5215a99F/00 Flatpack package : CHA5215aFKF/23 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA52150160 -08-Jun-00 12/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice