DYELEC DMT6N70-TU 700v n-channel power mosfet Datasheet

6N70
700V N-Channel Power MOSFET
●
●
●
●
●
RDS(ON), VGS@10V,ID@3A<1.7Ω
Fast switching capability
Low gate charge
Lead free in compliance with EU RoHS directive.
Green molding compound
PRODUCT SUMMARY
VDS (V)
Current(A)
1.7 @ VGS =10V
6
700
RDS(on)(Ω)
Pin Definition:
●
1. Gate
2. Drain
3. Source
Case: TO-220,ITO-220,TO-262,TO-263 Package
Ordering Information
Package
Packing
DMT6N70-TU
TO-220
50pcs / Tube
DMF6N70-TU
ITO-220
50pcs / Tube
DMK6N70-TU
TO-262
50pcs / Tube
DMG6N70-TU
TO-263
50pcs / Tube
DMG6N70-TR
TO-263
800pcs / 13" Reel
Part No.
Block Diagram
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
Continuous Drain Current
ID
6
V
A
Pulsed Drain Current
IDM
24
A
Single Pulse Avalanche Energy (Note 1)
EAS
321
mJ
TO-220/TO-262/TO-263
Power Dissipation
ITO-220
142
W
45
W
PD
Junction Temperature
TJ
+150
Operating Temperature
TOPR
-55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
NOTES :
1. L=30mH, IAS=4.5A, VDD=50V, RG=25ohm, Starting TJ=25oC
2. Pulse width<300us, Duty cycle<2%
3. Essentially independent of operating temperature typical characteristics.
4. Guaranteed by design, not subject to production testing
May.2015-REV.00
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°C
°C
°C
1/8
6N70
700V N-Channel Power MOSFET
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
RATING
UNIT
θJA
62.5
120
°C/W
TO-220/TO-262/TO-263
ITO-220
0.78
TO-220/TO-262/TO-263
Junction to Case
θJC
ITO-220
°C/W
2.78
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
700
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
2
2.8
4
V
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=3A
-
1.47
1.7
Ω
Zero Gate Voltage Drain Current
IDSS
VDS=700V,VGS=0V
-
0.03
1.0
uA
Gate-Source Leakage Current
IGSS
VGS=+30V,VDS=0V
-
+10
+100
nA
Diode Forward Voltage
VSD
IS=6A,VGS=0V
-
0.87
1.4
V
-
16.5
-
-
4.8
-
-
5.7
-
-
831
-
-
92
-
-
0.8
-
-
25
-
-
38
-
-
49
-
-
30
-
Dynamic
(Note 4)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
VDS=560V, ID=6A,
VGS=10V (Note 2,3)
VDS=25V, VGS=0V,
f=1.0MHZ
VDD=350V, ID=6A,
RG=25Ω (Note 2,3)
tf
nC
pF
ns
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
May.2015-REV.00
IS
---
-
-
6
A
ISM
---
-
-
24
A
-
531
-
ns
-
3.3
-
uC
trr
Qrr
VGS=0V, IS=6A
dIF/ dt=100A/us
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(Note 2)
2/8
6N70
700V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
Fig.1 Output Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction Temperature
Fig.5 Capacitance vs. Drain-Source Voltage
Fig.6 Source-Drain Diode Forward Voltage
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6N70
700V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
Fig.7 Gate Charge
Fig.8 BVDSS vs. Junction Temperature
Fig.9 Threshold Voltage Variation with Temperature
Fig.10 Maximum Safe Operating Area
Fig.11 Maximum Safe Operating Area
Fig.12 Maximum Safe Operating Area
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6N70
700V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
Fig.13 PJU/PJD Normalized Transient Thermal Impedance vs. Pulse Width
Fig.14 PJP6NA70 Normalized Transient Thermal Impedance vs. Pulse Width
Fig.15 PJF6NA70 Normalized Transient Thermal Impedance vs. Pulse Width
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6N70
700V N-Channel Power MOSFET
TO-220 Mechanical Drawing
ITO-220 Mechanical Drawing
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6N70
700V N-Channel Power MOSFET
TO-262 Mechanical Drawing
TO-263 Mechanical Drawing
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6N70
700V N-Channel Power MOSFET
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