NTE NTE5494 Silicon controlled rectifier (scr) Datasheet

NTE5491 thru NTE5496
Silicon Controlled Rectifier (SCR)
10 Amp
Description:
The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC
control applications such as motor controls, heating controls, power supplies, or wherever half–wave
silicon gate–controlled, solid–state devices are needed.
Features:
D Glass–Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
D Blocking Voltage to 600 Volts
Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified)
Peak Repetitive Off–State Blocking Voltage, VRRM, VDRM
NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Peak Non–Repetitive Reverse Voltage, VRSM
NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 720V
RMS On–State Current (All Conduction Angles), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Average On–State Current (TC = +65°C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Peak Non–Repetitive Surge Current, ITSM
(One cycle, 60Hz, Preceeded and followed by rated Current and Voltage) . . . . . . . . . . 150A
Circuit Fusing Considerations (TJ = –40° to +125°C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . 93A2s
Peak Gate Power Dissipation, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Peak Forward Gate Current, IGT
NTE5491, NTE5492, NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A
NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W
Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 in.lb.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Average Forward Blocking Current
NTE5491
ID(AV)
Test Conditions
Rated VDRM , Gate Open
TJ = +125°C
Min Typ Max Unit
–
–
6.5
mA
NTE5492
–
–
6.0
mA
NTE5494
–
–
4.0
mA
NTE5496
–
–
2.5
mA
–
–
6.5
mA
NTE5492
–
–
6.0
mA
NTE5494
–
–
4.0
mA
NTE5496
–
–
2.5
mA
Average Reverse Blocking Current
NTE5491
IR(AV)
Rated VRRM , Gate Open
TJ = +125°C
Peak Forward Blocking Current
IDRM
Rated VDRM, Gate Open
–
–
10
µA
Peak Reverse Blocking Current
IRRM
Rated VRRM, Gate Open,
TJ = +125°C
–
–
20
mA
Peak On–State Voltage
VTM
ITM = 50.3A Peak, Note 1
–
–
2
V
DC Gate–Trigger Current
IGT
VAK = 12VDC, RL = 50Ω
–
–
40
mA
DC Gate–Trigger Voltage
VGT
VAK = 12VDC, RL = 50Ω
–
0.65
2.0
V
Gate Non–Trigger Voltage
VGD
Rated VDRM, RL = 50Ω, TJ = +125°C 0.25
–
–
V
DC Holding Current
Critical Rate–of–Rise of Off–State
Voltage
IH
dv/dt
VAK = 12V, Gate Open
–
7.3
50
mA
Rated VDRM, Exponential Waveform,
TC = +125°C, Gate Open
–
30
–
V/µs
Note 1. Pulse Test: Pulse Width ≤ 1ms, Duty Cycle ≤ 2%.
.562
(14.28)
Max
Gate
Cathode
1.193
(30.33)
Max
.200 (5.08) Max
.453
(11.5)
Max
Anode
1/4–28 UNF–2A