NEC NP70N04MUG-S18-AY Mos field effect transistor switching n-channel power mos fet Datasheet

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP70N04MUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP70N04MUG-S18-AY
LEAD PLATING
PACKING
PACKAGE
Pure Sn (Tin)
Tube 50 p/tube
TO-220 (MP-25K) typ. 1.9 g
Note
Note Pb-free (This product does not contain Pb in the external electrode).
FEATURES
(TO-220)
• Super low on-state resistance
RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 35 A)
• Channel temperature 175 degree rated
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±70
A
ID(pulse)
±280
A
Total Power Dissipation (TC = 25°C)
PT1
115
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Drain Current (pulse)
Note1
Tstg
−55 to +175
°C
Repetitive Avalanche Current
Note2
IAR
37
A
Repetitive Avalanche Energy
Note2
EAR
137
mJ
Storage Temperature
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.30
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18664EJ3V0DS00 (3rd edition)
Date Published November 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
NP70N04MUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
VGS(th)
VDS = VGS, ID = 250 μA
2.0
4.0
V
| yfs |
VDS = 5 V, ID = 35 A
25
RDS(on)
VGS = 10 V, ID = 35 A
Input Capacitance
Ciss
VDS = 25 V,
4900
pF
Output Capacitance
Coss
VGS = 0 V,
480
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
310
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 35 A,
25
ns
Rise Time
tr
VGS = 10 V,
18
ns
Turn-off Delay Time
td(off)
RG = 0 Ω
63
ns
Fall Time
tf
12
ns
Total Gate Charge
QG
VDD = 32 V,
90
nC
Gate to Source Charge
QGS
VGS = 10 V,
21
nC
QGD
ID = 70 A
31
nC
VF(S-D)
IF = 70 A, VGS = 0 V
0.96
Reverse Recovery Time
trr
IF = 70 A, VGS = 0 V,
37
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
42
nC
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
Gate to Drain Charge
Body Diode Forward Voltage
Note
49
S
4.0
5.0
mΩ
1.5
V
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
ID
VDS
τ
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
0
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
BVDSS
RL
VDD
Data Sheet D18664EJ3V0DS
td(on)
ton
tf
toff
NP70N04MUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
120
100
80
60
40
20
0
0
0
25
50
75
100
125
150
0
175
50
75
100
125
150
175
TC - Case Temperature - °C
TC - Case Temperature - °C
<R>
25
FORWARD BIAS SAFE OPERATING AREA
100
R
(o
DS
(V
n)
GS
ID(pulse)
d
it e
Lim V )
0
i
=1
PW
=1
i
00
μs
i
1i m
ID(DC) DC
i
ms
wn
d
it e
Lim
d
it e
im
nL
o
kd
ea
io
at
TC = 25°C
Single pulse
Br
ip
i ss
1
1i 0
s
D
er
10
y
ar
nd
co
Se
w
Po
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
1000
Rth(ch-A) = 83.3°C/Wi
10
1
Rth(ch-C) = 1.30°C/Wi
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18664EJ3V0DS
3
NP70N04MUG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
1000
ID - Drain Current - A
ID - Drain Current - A
300
200
100
Tch = −55°C
25°C
75°C
150°C
175°C
100
10
1
VGS = 10 V
Pulsed
VDS = 10 V
Pulsed
0
0.1
0.5
1
1.5
0
1
2
5
6
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4
3.5
3
2.5
2
1.5
1
VDS = VGS
ID = 250 μA
0.5
0
-75
-25
25
75
125
175
100
Tch = −55°C
25°C
75°C
150°C
175°C
10
VDS = 5 V
Pulsed
1
0.1
225
1
VGS = 10 V
Pulsed
6
4
2
0
10
100
100
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
8
1
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
4
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - °C
10
ID - Drain Current - A
4
3
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(th) - Gate to Source Threshold Voltage - V
0
ID = 35 A
Pulsed
8
6
4
2
0
0
5
10
15
VGS - Gate to Source Voltage - V
Data Sheet D18664EJ3V0DS
20
NP70N04MUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
8
10000
VGS = 10 V
ID = 35 A
Ciss, Coss, Crss - Capacitance - pF
6
4
2
Pulsed
0
-75
-25
25
75
125
175
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
0.01
225
Tch - Channel Temperature - °C
10
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(off)
100
td(on)
tf
tr
10
VDS - Drain to Source Voltage - V
1000
td(on), tr, td(off), tf - Switching Time - ns
1
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
12
35
VDD = 32 V
20 V
8V
30
9
25
20
6
VGS
15
3
10
VDS
5
ID = 70 A
0
1
0.1
1
10
0
100
20
40
60
80
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
0
100
1000
100
VGS = 10 V
0V
10
1
Pulsed
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
0.1
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1
0
0.5
1
1.5
0.1
1
10
100
IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
Data Sheet D18664EJ3V0DS
5
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
NP70N04MUG
PACKAGE DRAWING (Unit: mm)
TO-220 (MP-25K)
3
0.8±0.1
2.54 TYP.
2.54 TYP.
1.27±0.2
3.1±0.2
2
13.7±0.3
1
6.3±0.3
4
4.45±0.2
1.3±0.2
15.9 MAX.
φ 3.8±0.2
2.8±0.3
10.0±0.2
0.5±0.2
2.5±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18664EJ3V0DS
NP70N04MUG
MARKING INFORMATION
NEC
70N04
UG
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP70N04MUG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Wave soldering
Maximum temperature (Solder temperature): 260°C or below
MP-25K
Time: 10 seconds or less
Recommended
Condition Symbol
THDWS
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
MP-25K
Time (per side of the device): 3 seconds or less
P350
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D18664EJ3V0DS
7
NP70N04MUG
• The information in this document is current as of November, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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M8E 02. 11-1
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