Fairchild FDP6670AS 30v n-channel powertrenchâ® syncfetâ ¢ Datasheet

FDP6670AS/FDB6670AS
tm
30V N-Channel PowerTrench® SyncFET™
General Description
Features
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON)
and low gate charge.
The FDP6670AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP6670AS/FDB6670AS as the low-side switch in
a synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
• 31 A, 30 V.
RDS(ON) = 8.5 mΩ @ VGS = 10 V
RDS(ON) = 10.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (28nC typical)
• High performance trench technology for extremely
low RDS(ON) and fast switching
• High power and current handling capability
D
D
G
G
D
G
S
TO-220
TO-263AB
FDP Series
S
Absolute Maximum Ratings
Symbol
FDB Series
S
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
±20
V
A
PD
Total Power Dissipation @ TC = 25°C
62
– Pulsed
(Note 1)
Derate above 25°C
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
150
62.5
W
0.5
W/°C
–55 to +150
°C
275
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
2.1
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB6670AS
FDB6670AS
13’’
24mm
800 units
FDP6670AS
FDP6670AS
Tube
n/a
45
©2008 Fairchild Semiconductor Corporation
FDP6670AS/FDB6670AS Rev A2 (X)
FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™
May 2008
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V,
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
500
µA
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V
±100
nA
V
On Characteristics
ID = 1mA
30
ID = 10mA, Referenced to 25°C
V
mV/°C
27
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS,
1.7
–4
3
ID = 10mA, Referenced to 25°C
ID = 1mA
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 10 V
gFS
Forward Transconductance
VDS = 10 V,
ID = 31 A
1
VGS = 10 V, ID = 31 A
VGS = 4.5 V, ID = 26.5 A
VGS=10 V, ID =31 A, TJ=125°C
6.8
8.4
9
8.5
10.5
12.5
mV/°C
60
mΩ
A
84
S
1570
pF
440
pF
160
pF
1.9
Ω
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
(Note 2)
td(on)
Turn–On Delay Time
9
18
ns
tr
Turn–On Rise Time
12
22
ns
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
VDS = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
27
43
ns
19
34
ns
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
25
40
ns
tf
Turn–Off Fall Time
13
23
ns
Qg
Total Gate Charge, Vgs=10V
28
39
nC
Qgs
Gate–Source Charge, Vgs=5V
15
21
nC
Qgd
Gate–Drain Charge
Qgd
Gate–Drain Charge
VDS = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
VDS = 15 V,
ID = 31 A,
16
29
ns
16
29
ns
5
nC
5
nC
Drain–Source Diode Characteristics
VSD
trr
Qrr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 3.5 A,
diF/dt = 300 A/µs
(Note 1)
(Note 1)
(Note 2)
0.5
0.6
20
14
0.7
0.9
V
nS
nC
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
FDP6670AS/FDB6670AS Rev A2 (X)
FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™
Electrical Characteristics
VGS = 10V
6.0V
120
1.8
4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
150
5.0V
4.0V
90
3.5V
60
3.0V
30
0
0
1
2
3
VDS, DRAIN-SOURCE VOLTAGE (V)
1.6
1.4
4.5V
5.0V
6.0V
10V
1
0.8
4
0
30
60
90
ID, DRAIN CURRENT (A)
120
150
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.022
1.6
ID = 31A
VGS = 10V
1.4
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.0V
1.2
Figure 1. On-Region Characteristics.
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (oC)
125
ID = 15.5A
0.017
0.007
2
10
IS, REVERSE DRAIN CURRENT (A)
60
40
o
TA = 125 C
-55oC
25oC
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
VDS = 5V
0
o
TA = 25 C
0.002
150
80
20
TA = 125oC
0.012
Figure 3. On-Resistance Variation with
Temperature.
ID, DRAIN CURRENT (A)
VGS = 3.5V
VGS = 0V
1
o
TA = 125 C
25oC
0.1
-55oC
0.01
4
0
0.1
0.2
0.3
0.4
0.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.6
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6670AS/FDB6670AS Rev A2 (X)
FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics
2400
ID = 31A
f = 1MHz
VGS = 0 V
8
VDS = 10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
15V
4
2
1800
Ciss
1200
Crss
0
0
6
12
18
Qg, GATE CHARGE (nC)
24
0
30
0
Figure 7. Gate Charge Characteristics.
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
1000
RDS(ON) LIMIT
100
1s
P(pk), PEAK TRANSIENT POWER (W)
1000
100µs
10ms
100m
10s
10
DC
VGS = 10V
SINGLE PULSE
o
RθJC = 2.1 C/W
o
TA = 25 C
1
SINGLE PULSE
RθJC = 2.1°C/W
TA = 25°C
800
600
400
200
0
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
0.1
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
Coss
600
1
1
10
t1, TIME (sec)
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
D = 0.5
RθJC(t) = r(t) * RθJC
RθJC = 2.1 °C/W
0.2
0.1
100
0.1
0.05
P(pk
0.02
0.01
t1
t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
TJ - Tc = P * RθJC(t)
Duty Cycle, D = t1 / t2
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDP6670AS/FDB6670AS Rev A2 (X)
FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
CURRENT: 0.8A/div
IDSS, REVERSE LEAKAGE CURRENT (A)
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6670AS.
0.01
TA = 125oC
0.001
TA = 100oC
0.0001
TA = 25oC
0.00001
0
TIME: 12.5ns/div
10
20
VDS, REVERSE VOLTAGE (V)
30
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
Figure 12. FDP6670AS SyncFET body
diode reverse recovery characteristic.
CURRENT: 0.8A/div
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6670A).
TIME: 12.5ns/div
Figure 13. Non-SyncFET (FDP6670A) body
diode reverse recovery characteristic.
FDP6670AS/FDB6670AS Rev A2 (X)
FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)
2400
ID = 31A
f = 1MHz
VGS = 0 V
8
VDS = 10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
15V
4
2
1800
Ciss
1200
Crss
0
0
6
12
18
Qg, GATE CHARGE (nC)
24
0
30
0
Figure 7. Gate Charge Characteristics.
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
1000
RDS(ON) LIMIT
100
1s
P(pk), PEAK TRANSIENT POWER (W)
1000
100µs
10ms
100m
10s
10
DC
VGS = 10V
SINGLE PULSE
o
RθJC = 2.1 C/W
o
TA = 25 C
1
SINGLE PULSE
RθJC = 2.1°C/W
TA = 25°C
800
600
400
200
0
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
0.1
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
Coss
600
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJC(t) = r(t) * RθJC
RθJC = 2.1 °C/W
0.2
0.1
0.1
0.05
P(pk
0.02
0.01
t1
t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
TJ - Tc = P * RθJC(t)
Duty Cycle, D = t1 / t2
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDP6670AS/FDB6670AS Rev A2 (X)
FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)
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(a) are intended for surgical implant into the body or (b)
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properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
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This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
Obsolete
Not In Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDP6670AS/FDB6670AS Rev A2 (X)
FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™
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