Diodes MMDT4413 Complementary npn / pnp small signal surface mount transistor Datasheet

MMDT4413
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
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•
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Complementary Pair
One 4401-Type NPN,
One 4403-Type PNP
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
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•
•
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B1
E1
B C
C1
B2
E2
H
Mechanical Data
•
•
SOT-363
A
C2
K
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 6
Ordering & Date Code Information: See Page 6
Weight: 0.006 grams (approximate)
Maximum Ratings, Total Device
J
D
C2
B1
E1
E2
B2
C1
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
—
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
α
0°
8°
All Dimensions in mm
@TA = 25°C unless otherwise specified
Symbol
Value
Pd
200
mW
RθJA
625
°C/W
Tj, TSTG
-55 to +150
°C
(Note 1, 2)
Thermal Resistance, Junction to Ambient
L
F
Note:
E1, B1, and C1 = PNP 4403 Section,
E2, B2, and C2 = NPN 4401 Section.
Type marking indicates orientation
Characteristic
Power Dissipation
M
Dim
(Note 1)
Operating and Storage Temperature Range
Maximum Ratings, NPN 4401 Section
Unit
@TA = 25°C unless otherwise specified
Symbol
NPN4401
Unit
Collector-Base Voltage
Characteristic
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
IC
600
mA
Symbol
PNP4403
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Collector Current - Continuous
(Note 1)
Maximum Ratings, PNP 4403 Section
@TA = 25°C unless otherwise specified
Characteristic
Emitter-Base Voltage
Collector Current - Continuous
Notes:
1.
2.
3.
4.
5.
(Note 1)
VEBO
-5.0
V
IC
-600
mA
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Maximum combined dissipation.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30121 Rev. 10 - 2
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MMDT4413
© Diodes Incorporated
Electrical Characteristics, NPN 4401 Section
Characteristic
@TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
60
⎯
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
⎯
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
⎯
V
IE = 100μA, IC = 0
ICEX
⎯
100
nA
VCE = 35V, VEB(OFF) = 0.4V
IBL
⎯
100
nA
VCE = 35V, VEB(OFF) = 0.4V
hFE
20
40
80
100
40
⎯
⎯
⎯
300
⎯
⎯
IC = 100µA,
IC = 1.0mA,
IC = 10mA,
IC = 150mA,
IC = 500mA,
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
0.40
0.75
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.75
⎯
0.95
1.2
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Output Capacitance
Ccb
⎯
6.5
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb
⎯
30
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
15
kΩ
Voltage Feedback Ratio
hre
0.1
8.0
x 10
Small Signal Current Gain
hfe
40
500
⎯
Output Admittance
hoe
1.0
30
μS
fT
250
⎯
MHz
Delay Time
td
⎯
15
ns
Rise Time
tr
⎯
20
ns
Storage Time
ts
⎯
225
ns
Fall Time
tf
⎯
30
ns
OFF CHARACTERISTICS (Note 6)
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
VCE =
VCE =
VCE =
VCE =
VCE =
1.0V
1.0V
1.0V
1.0V
2.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
-4
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Notes:
6.
VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Short duration pulse test used to minimize self-heating effect.
DS30121 Rev. 10 - 2
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MMDT4413
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Electrical Characteristics, PNP 4403 Section
Characteristic
@TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-40
⎯
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
⎯
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
⎯
V
IE = -100μA, IC = 0
ICEX
⎯
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
IBL
⎯
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
hFE
30
60
100
100
20
⎯
⎯
⎯
300
⎯
⎯
IC = -100µA, VCE =
IC = -1.0mA, VCE =
IC = -10mA, VCE =
IC = -150mA, VCE =
IC = -500mA, VCE =
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-0.40
-0.75
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.75
⎯
-0.95
-1.30
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Output Capacitance
Ccb
⎯
8.5
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb
⎯
30
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.5
15
kΩ
Voltage Feedback Ratio
hre
0.1
8.0
x 10
Small Signal Current Gain
hfe
60
500
⎯
Output Admittance
hoe
1.0
100
μS
fT
200
⎯
MHz
OFF CHARACTERISTICS (Note 6)
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
-1.0V
-1.0V
-1.0V
-2.0V
-2.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
-4
VCE = -10V, IC = -1.0mA, f = 1.0kHz
VCE = -10V, IC = -20mA, f = 100MHz
SWITCHING CHARACTERISTICS
td
⎯
15
ns
Rise Time
tr
⎯
20
ns
Storage Time
ts
⎯
225
ns
Fall Time
tf
⎯
30
ns
Delay Time
DS30121 Rev. 10 - 2
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VCC = -30V, IC = -150mA,
VBE(off) = -2.0V, IB1 = -15mA
VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
MMDT4413
© Diodes Incorporated
2.0
VCE, COLLECTOR-EMITTER VOLTAGE (V)
30
CAPACITANCE (pF)
20
10
5.0
1.0
0.1
1.0
10
REVERSE VOLTS (V)
Fig. 1 Typical Capacitance (4401)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
50
0.01
0.1
1
10
100
IB BASE CURRENT (mA)
Fig. 2 Typical Collector Saturation Region (4401)
0.5
1,000
TA = 125°C
100
TA = -25°C
IC
IB = 10
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
1.8
T A = +25°C
10
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
T A = -50°C
1
1
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current (4401)
0.1
0
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current (4401)
1,000
VCE = 5V
0.9
fT, GAIN BANDWIDTH PRODUCT (MHz)
VBE(ON), BASE EMITTER VOLTAGE (V)
1.0
TA = -50°C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1
VCE = 5V
100
10
1
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Base Emitter Voltage vs. Collector Current (4401)
DS30121 Rev. 10 - 2
100
10
IC, COLLECTOR CURRENT (mA)
Fig. 6 Gain Bandwidth Product vs. Collector Current (4401)
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MMDT4413
© Diodes Incorporated
1.6
VCE COLLECTOR-EMITTER VOLTAGE (V)
30
20
CAPACITANCE (pF)
Cibo
10
5.0
Cobo
1.0
-0.1
-1.0
-10
REVERSE VOLTS (V)
Fig. 7 Typical Capacitance (4403)
1.0
0.8
0.6
0.4
0.2
0
0.001
1
100
0.1
10
0.01
IB, BASE CURRENT (mA)
Fig. 8 Typical Collector Saturation Region (4403)
VBE(ON), BASE EMITTER VOLTAGE (V)
1,000
IC
IB = 10
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
TA = 50°C
0
0.8
TA = -50°C
0.7
TA = 25°C
0.6
0.5
TA = 150°C
0.4
0.2
0.1
1
10
100
1
IC, COLLECTOR CURRENT (mA)
Fig. 10 Base-Emitter Voltage vs. Collector Current (4403)
1,000
1,000
fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
100
10
1
VCE = 5V
0.9
0.3
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 9 Collector Emitter Saturation Voltage vs. Collector Current (4403)
hFE, DC CURRENT GAIN
1.2
-30
0.5
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
1.4
VCE = 5V
100
1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 11 DC Current Gain vs. Collector Current (4403)
1
DS30121 Rev. 10 - 2
10
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 12 Gain Bandwidth Product vs. Collector Current (4403)
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MMDT4413
© Diodes Incorporated
400
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
0
25
50
100
75
125
150
175
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 13 Max Power Dissipation vs. Ambient Temperature (Total Device)
Ordering Information
Notes:
7.
(Note 7)
Device
Packaging
Shipping
MMDT4413-7-F
SOT-363
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
K13
Data Code Key
Year
Code
1998
J
Month
Code
Jan
1
1999
K
Feb
2
2000
L
2001
M
Mar
3
K13 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2002
N
Apr
4
2003
P
May
5
2004
R
2005
S
Jun
6
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30121 Rev. 10 - 2
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MMDT4413
© Diodes Incorporated
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