MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • • Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) • • • • • • • B1 E1 B C C1 B2 E2 H Mechanical Data • • SOT-363 A C2 K Case: SOT-363 Case Material: Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 6 Ordering & Date Code Information: See Page 6 Weight: 0.006 grams (approximate) Maximum Ratings, Total Device J D C2 B1 E1 E2 B2 C1 Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimensions in mm @TA = 25°C unless otherwise specified Symbol Value Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C (Note 1, 2) Thermal Resistance, Junction to Ambient L F Note: E1, B1, and C1 = PNP 4403 Section, E2, B2, and C2 = NPN 4401 Section. Type marking indicates orientation Characteristic Power Dissipation M Dim (Note 1) Operating and Storage Temperature Range Maximum Ratings, NPN 4401 Section Unit @TA = 25°C unless otherwise specified Symbol NPN4401 Unit Collector-Base Voltage Characteristic VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 600 mA Symbol PNP4403 Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Collector Current - Continuous (Note 1) Maximum Ratings, PNP 4403 Section @TA = 25°C unless otherwise specified Characteristic Emitter-Base Voltage Collector Current - Continuous Notes: 1. 2. 3. 4. 5. (Note 1) VEBO -5.0 V IC -600 mA Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Maximum combined dissipation. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30121 Rev. 10 - 2 1 of 6 www.diodes.com MMDT4413 © Diodes Incorporated Electrical Characteristics, NPN 4401 Section Characteristic @TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 100μA, IC = 0 ICEX ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V IBL ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V hFE 20 40 80 100 40 ⎯ ⎯ ⎯ 300 ⎯ ⎯ IC = 100µA, IC = 1.0mA, IC = 10mA, IC = 150mA, IC = 500mA, Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.40 0.75 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.75 ⎯ 0.95 1.2 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Ccb ⎯ 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ⎯ 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 kΩ Voltage Feedback Ratio hre 0.1 8.0 x 10 Small Signal Current Gain hfe 40 500 ⎯ Output Admittance hoe 1.0 30 μS fT 250 ⎯ MHz Delay Time td ⎯ 15 ns Rise Time tr ⎯ 20 ns Storage Time ts ⎯ 225 ns Fall Time tf ⎯ 30 ns OFF CHARACTERISTICS (Note 6) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 6) DC Current Gain VCE = VCE = VCE = VCE = VCE = 1.0V 1.0V 1.0V 1.0V 2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product -4 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS Notes: 6. VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Short duration pulse test used to minimize self-heating effect. DS30121 Rev. 10 - 2 2 of 6 www.diodes.com MMDT4413 © Diodes Incorporated Electrical Characteristics, PNP 4403 Section Characteristic @TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ⎯ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -100μA, IC = 0 ICEX ⎯ -100 nA VCE = -35V, VEB(OFF) = -0.4V IBL ⎯ -100 nA VCE = -35V, VEB(OFF) = -0.4V hFE 30 60 100 100 20 ⎯ ⎯ ⎯ 300 ⎯ ⎯ IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) -0.75 ⎯ -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Output Capacitance Ccb ⎯ 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ⎯ 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 kΩ Voltage Feedback Ratio hre 0.1 8.0 x 10 Small Signal Current Gain hfe 60 500 ⎯ Output Admittance hoe 1.0 100 μS fT 200 ⎯ MHz OFF CHARACTERISTICS (Note 6) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 6) DC Current Gain -1.0V -1.0V -1.0V -2.0V -2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product -4 VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS td ⎯ 15 ns Rise Time tr ⎯ 20 ns Storage Time ts ⎯ 225 ns Fall Time tf ⎯ 30 ns Delay Time DS30121 Rev. 10 - 2 3 of 6 www.diodes.com VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA MMDT4413 © Diodes Incorporated 2.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) 30 CAPACITANCE (pF) 20 10 5.0 1.0 0.1 1.0 10 REVERSE VOLTS (V) Fig. 1 Typical Capacitance (4401) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 50 0.01 0.1 1 10 100 IB BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region (4401) 0.5 1,000 TA = 125°C 100 TA = -25°C IC IB = 10 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1.8 T A = +25°C 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 T A = -50°C 1 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current (4401) 0.1 0 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current (4401) 1,000 VCE = 5V 0.9 fT, GAIN BANDWIDTH PRODUCT (MHz) VBE(ON), BASE EMITTER VOLTAGE (V) 1.0 TA = -50°C 0.8 0.7 0.6 0.5 0.4 0.3 0.2 1 VCE = 5V 100 10 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Base Emitter Voltage vs. Collector Current (4401) DS30121 Rev. 10 - 2 100 10 IC, COLLECTOR CURRENT (mA) Fig. 6 Gain Bandwidth Product vs. Collector Current (4401) 4 of 6 www.diodes.com 1 MMDT4413 © Diodes Incorporated 1.6 VCE COLLECTOR-EMITTER VOLTAGE (V) 30 20 CAPACITANCE (pF) Cibo 10 5.0 Cobo 1.0 -0.1 -1.0 -10 REVERSE VOLTS (V) Fig. 7 Typical Capacitance (4403) 1.0 0.8 0.6 0.4 0.2 0 0.001 1 100 0.1 10 0.01 IB, BASE CURRENT (mA) Fig. 8 Typical Collector Saturation Region (4403) VBE(ON), BASE EMITTER VOLTAGE (V) 1,000 IC IB = 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 TA = 50°C 0 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.2 0.1 1 10 100 1 IC, COLLECTOR CURRENT (mA) Fig. 10 Base-Emitter Voltage vs. Collector Current (4403) 1,000 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 VCE = 5V 0.9 0.3 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Collector Emitter Saturation Voltage vs. Collector Current (4403) hFE, DC CURRENT GAIN 1.2 -30 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 1.4 VCE = 5V 100 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 11 DC Current Gain vs. Collector Current (4403) 1 DS30121 Rev. 10 - 2 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 12 Gain Bandwidth Product vs. Collector Current (4403) 5 of 6 www.diodes.com MMDT4413 © Diodes Incorporated 400 PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 100 75 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 13 Max Power Dissipation vs. Ambient Temperature (Total Device) Ordering Information Notes: 7. (Note 7) Device Packaging Shipping MMDT4413-7-F SOT-363 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K13 Data Code Key Year Code 1998 J Month Code Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 K13 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2002 N Apr 4 2003 P May 5 2004 R 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30121 Rev. 10 - 2 6 of 6 www.diodes.com MMDT4413 © Diodes Incorporated