Single N-channel Trench MOSFET 100V, 40A, 22mΩ General Description Features The MDD1901 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1901 is suitable device for DC/DC Converters and general purpose applications. VDS = 100V ID = 40A @VGS = 10V RDS(ON) < 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V D G S Absolute Maximum Ratings (Tc = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V 40 A 24 A 80 A o TC=25 C Continuous Drain Current (1) o TC=100 C ID IDM Pulsed Drain Current o TC=25 C Power Dissipation o TC=100 C Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range 70 PD W 28 EAS 200 TJ, Tstg -55~150 mJ o C Thermal Characteristics Symbol Rating Thermal Resistance, Junction-to-Ambient Characteristics RθJA 40 Thermal Resistance, Junction-to-Case (1) RθJC 1.8 August. 2010. Version 1.2 Unit o C/W 1 MagnaChip Semiconductor Ltd. MDD1901 – Single N-Channel Trench MOSFET 100V MDD1901 Part Number Temp. Range Package Packing Rohs Status MDD1901RH -55~150oC D-PAK Tape & Reel Halogen Free Electrical Characteristics (Tc =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 100 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 2.8 4.0 V Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 - 17 22 - 28 33 19 25 - 35 - - 75 100 - 12 - - 20 - - 3090 - - 160 - - 235 - - 0.8 - - 15 21 - 26 36 - 69 96 - 15 21 - 0.7 1.2 V - 70 100 ns - 240 - nC VGS = 10V, ID = 35A Drain-Source ON Resistance o RDS(ON) TJ=125 C VGS = 6.0V, ID = 20A Forward Transconductance gfs VDS = 5V, ID = 35A μA mΩ S Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg VDS = 50V, ID = 20A, VGS = 10V VDS = 30V, VGS = 0V, f = 1.0MHz VGS=0V,VDS=0V,F=1MHz td(on) tr td(off) VDS=50V, VGS=10V, RL=1.15Ω, RGEN=2.5Ω tf nC pF Ω ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 1A, VGS = 0V IF = 20A, dl/dt = 100A/μs Note : 1. 2. Surface mounted RF4 board with 2oz. Copper. Starting TJ=25°C, L=1mH, IAS=20A, VDD=50V, VGS=10V August. 2010. Version 1.2 2 MagnaChip Semiconductor Ltd. MDD1901 – Single N-Channel Trench MOSFET 100V Ordering Information 40 6.0V ~ 10V 80 ID, Drain Current[A] 5.0V RDS(ON) [mΩ ] 30 60 4.5V 40 VGS=6.0V 20 4.0V 20 VGS=10V 3.5V 0 0 1 2 3 4 10 5 0 10 20 VDS, Drain-Source Voltage [V] 40 ID [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 2.2 70 2.0 60 1.8 50 1.6 VGS=10V ID=35A RDS(ON) [mΩ ] RDS(ON), (Normalized) Drain-Source On-Resistance [mΩ ] 30 1.4 1.2 40 125 ℃ 30 1.0 20 0.8 25 ℃ 10 0.6 0.4 -50 -25 0 25 50 75 100 125 0 150 4 6 o 8 10 VGS [V] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 20 10 *Note ; VDS=5.0V 1 15 0.1 IS [A] ID [A] 0.01 10 1E-3 1E-4 5 125 125 ℃ ℃ 1 2 3 4 1E-6 0.0 5 VGS [V] 0.2 0.4 0.6 0.8 1.0 VSD [V] Fig.5 Transfer Characteristics August. 2010. Version 1.2 ℃ 1E-5 0 0 ℃ 25 25 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDD1901 – Single N-Channel Trench MOSFET 100V 100 * Note ; ID = 20A 9 4000 7 3500 Capacitance [pF] 8 6 VGS [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 4500 5 4 3 2 Ciss 3000 2500 2000 * Notes ; 1. VGS = 0 V 2. f = 1 MHz 1500 1000 1 Coss 500 Crss 0 0 10 20 30 40 50 60 70 0 80 0 5 10 15 Qg [nC] Fig.7 Gate Charge Characteristics 10 20 25 30 35 40 VDS [V] Fig.8 Capacitance Characteristics 40 2 100us 30 Operation in This Area is Limited by R DS(on) ID [A] 1 ms 1 ID [A] 10 10 ms 20 100ms 10 0 10 DC Single Pulse Rθ jC=1.8 /W Ta=25 ℃ ℃ 10 -1 10 -1 10 0 10 1 10 0 25 2 VDS [V] 50 75 100 125 150 TC [ ] ℃ Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area Zθ ja, Normalized Thermal Response [t] 1 10 0 10 D=0.5 0.2 0.1 -1 10 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ Ja* Rθ Ja(t) + Ta RΘ JC=1.8 /W 0.05 0.02 ℃ 0.01 -2 10 single pulse -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve August. 2010. Version 1.2 4 MagnaChip Semiconductor Ltd. MDD1901 – Single N-Channel Trench MOSFET 100V 5000 10 MDD1901 – Single N-Channel Trench MOSFET 100V Package Dimension D-PAK (TO-252) Dimensions are in millimeters, unless otherwise specified August. 2010. Version 1.2 5 MagnaChip Semiconductor Ltd. MDD1901 – Single N-Channel Trench MOSFET 100V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. August. 2010. Version 1.2 6 MagnaChip Semiconductor Ltd.