NTE2972 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC–DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Channel–to–Case, Rth(ch–c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83°C/W Electrical Characteristics: (Tch = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain–Source Breakdown Voltage V(BR)DSS VDS = 0V, ID = 1mA 700 – – V Gate–Source Breakdown Voltage V(BR)GSS VDS = 0V, IG = ±100µA ±30 – – V Gate–Source Leakage IGSS VGS = ±25V, VDS = 0V – – ±10 µA Zero Gate Voltage Drain Current IDSS VDS = 700V, VGS = 0 – – 1.0 mA Gate Threshold Voltage VGS(th) VDS = 10V, ID = 1mA 2.0 3.0 4.0 V Static Drain–Source ON Resistance RDS(on) VGS = 10V, ID = 5A – 1.0 1.3 Ω Drain–Source On–State Voltage VDS(on) VGS = 10V, ID = 5A – 5.0 6.5 V |yfs| VGS = 10V, ID = 5A 4.8 8.0 – S Forward Transfer Admittance Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified) Parameter Symbol Test Conditions Typ Max Unit – 1380 – pF Input Capacitance Ciss Output Capacitance Coss – 150 – pF Reverse Transfer Capacitance Crss – 32 – pF Turn–On Delay Time td(on) – 25 – ns – 33 – ns td(off) – 170 – ns tf – 55 – ns – 1.5 2.0 V Rise Time tr Turn–Off Delay Time Fall Time Diode Forward Voltage VSD VGS = 0V, VDS = 25V, f = 1MHz Min VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω Ω IS = 5A, VGS = 0V .190 (4.82) .615 (15.62) .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) G D S .215 (5.47)