PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R500 and the NE960R500 are available in chip form. The NE960R500 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R575 and the NE962R575 are available in a hermetically sealed ceramic package. The NE962R575 is suitable for oscillator application. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • High Output Power : Po (1 dB) = +27.5 dBm TYP. • High Linear Gain : 9.0 dB TYP. • High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz ORDERING INFORMATION Part Number Package 00 (CHIP) NE960R500 Supplying Form ESD protective envelope NE961R500 75 NE960R575 NE962R575 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE960R500, NE960R575, NE961R500, NE962R575) Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14387EJ1V0DS00 (1st edition) Date Published July 1999 N CP(K) Printed in Japan © 1999 NE960R5 SERIES ABSOLUTE MAXIMUM RATINGS (TA = +25°°C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Symbol Ratings Unit VDS 15 V Note 1 –7 (−9 VGSO ) V Drain Current ID 0.7 A Gate Forward Current IGF +5.0 mA Gate Reverse Current IGR –5.0 mA Note 2 Total Power Dissipation PT 5.0 (4.2 ) Channel Temperature Tch 175 °C Storage Temperature Tstg –65 to +175 °C W Notes 1. NE962R575 2. NE961R500 RECOMMENDED OPERATING CONDITIONS Parameter Symbol Drain to Source Voltage Gain Compression Channel Temperature Test Condition MIN. TYP. MAX. Unit VDS − 9.0 9.0 V Gcomp − − 3.0 dB Tch − − +130 °C MIN. TYP. MAX. Unit ELECTRICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified, using NEC standard test fixture.) Parameter Symbol Saturated Drain Current Pinch-off Voltage Test Conditions IDSS VDS = 1.5 V, VGS = 0 V 0.18 0.4 0.7 A Vp VDS = 2.5 V, ID = 2 mA –2.5 –1.8 –0.5 V Gate to Drain Break Down Voltage BVgd Igd = 2 mA 15 − − V Gate to Source Break Down Note 2 Voltage BVgs Igs = 2 mA 9.0 − − V − − 30 (35 25.5 26.5 − dBm − 27.5 − dBm η add − 30 − % GL 8.0 9.0 − dB Note 1 Thermal Resistance Rth Channel to Case Output Power at Pin = +19 dBm Pout f = 14.5 GHz, VDS = 9.0 V Rg = 1 kΩ IDset = 180 mA (RF OFF) Output Power at 1 dB Gain Note 1 Compression Point Po (1 dB) Note 1 Power Added Efficiency at Po (1dB) Note 1 Linear Gain Notes 1. Except NE962R575 2. NE962R575 only 3. NE961R500 Remark DC and RF performance is 100 % testing. 2 Preliminary Data Sheet P14387EJ1V0DS00 Note 3 ) °C/W NE960R5 SERIES TYPICAL CHARACTERISTICS (TA = +25°°C) 60 25 45 20 30 15 15 Power Added Efficiency ηadd (%) Output Power Pout (dBm) OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER 30 f = 14.5 GHz (1 tone), VDS = 9 V, IDset = 180 mA Rg = 1 kΩ 10 0 5 10 15 Input Power Pin (dBm) 20 25 12 250 10 200 8 150 6 Gain (dB) Drain Current ID (mA) DRAIN CURRENT AND GAIN vs. INPUT POWER 300 4 100 5 10 15 Input Power Pin (dBm) 20 25 GATE CURRENT vs. INPUT POWER Gate Current Ig (mA) 1.5 1.0 0.5 0.0 0.5 5 10 15 20 25 Input Power Pin (dBm) Preliminary Data Sheet P14387EJ1V0DS00 3 NE960R5 SERIES TYPICAL S-PARAMETER [NE960R575] TEST CONDITIONS: VDS = 9 V, IDset = 180 mA FREQUENCY GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 MAG. S11 ANG. (deg.) 0.87 0.84 0.84 0.82 0.81 0.79 0.73 0.69 0.62 0.63 0.76 0.79 0.87 0.87 0.83 S21 ANG. (deg.) MAG. –140 –154 –160 –163 –167 –175 171 147 109 47 0 –21 –45 –53 –60 4.36 2.98 2.36 2.08 1.99 1.96 2.02 2.20 2.30 2.22 1.62 1.30 0.90 0.60 0.43 S12 ANG. (deg.) MAG. 85 68 54 42 33 18 1 –20 –51 –88 –124 –144 –172 166 150 0.042 0.040 0.040 0.043 0.047 0.055 0.066 0.076 0.083 0.063 0.032 0.017 0.022 0.034 0.037 MAG. 23 19 22 32 34 35 30 18 –4 –41 –82 –141 128 101 82 0.23 0.25 0.30 0.32 0.34 0.36 0.36 0.37 0.38 0.45 0.57 0.61 0.66 0.73 0.75 START 2 GHz, STOP 16 GHz, STEP 1 GHz S11 S12 1.0 +90° 2.0 0.5 +135° +45° 16 GHz 0.5 0 1.0 2.0 ∞ 2 GHz ±180° 0° 2 GHz 16 GHz –45° –135° –2.0 –0.5 –1.0 –90° Rmax. = 0.1 Rmax. = 1 S22 +90° 1.0 2 GHz +135° ±180° S21 16 GHz 2.0 0.5 +45° 0° 0 0.5 1.0 2.0 16 GHz ∞ 2 GHz –45° –135° –90° 4 –2.0 –0.5 Rmax. = 5 Preliminary Data Sheet P14387EJ1V0DS00 –1.0 Rmax. = 1 S22 ANG. (deg.) –131 –143 –149 –154 –160 –168 178 159 136 95 65 49 27 11 –2 NE960R5 SERIES [NE960R500] TEST CONDITIONS: VDS = 9 V, IDset = 180 mA FREQUENCY GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 MAG. 0.87 0.85 0.85 0.86 0.86 0.85 0.84 0.85 0.86 0.86 0.85 0.85 0.87 0.86 0.87 0.87 0.87 S11 ANG. (deg.) −132 −146 −155 −158 −161 −162 −163 −165 −170 −174 179 172 172 170 167 167 163 MAG. 6.53 4.06 2.74 2.24 1.89 1.62 1.32 1.24 1.12 1.04 0.94 0.83 0.65 0.60 0.57 0.54 0.40 S21 ANG. (deg.) 160 −168 −148 −121 −93 −66 −40 −11 16 43 64 86 114 152 −178 −150 −122 MAG. S12 ANG. (deg.) 0.038 0.037 0.038 0.038 0.037 0.033 0.032 0.039 0.032 0.032 0.041 0.025 0.038 0.028 0.032 0.032 0.045 90 120 155 −177 −137 −109 −64 −35 5 47 78 108 153 171 −142 −98 −80 MAG. 0.23 0.25 0.29 0.34 0.39 0.44 0.48 0.53 0.56 0.58 0.61 0.63 0.65 0.65 0.68 0.67 0.67 S22 ANG. (deg.) −105 −118 −124 −131 −133 −135 −137 −138 −139 −142 −146 −149 −153 −157 −159 −164 −175 Caution S-parameters include bond wires. Gate : Total 2 wires, 1 per bond pad, 300 µm long each wire. Drain : Total 2 wires, 1 per bond pad, 300 µm long each wire. Source : No bond wires. Wire : 25 µm diameter, gold. Preliminary Data Sheet P14387EJ1V0DS00 5 NE960R5 SERIES [NE961R500] TEST CONDITIONS: VDS = 9 V, IDset = 180 mA FREQUENCY GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 MAG. 0.81 0.79 0.78 0.79 0.78 0.77 0.76 0.76 0.76 0.77 0.77 0.79 0.81 0.81 0.81 0.80 0.81 S11 ANG. (deg.) −134 −149 −159 −164 −168 −168 −171 −175 178 171 164 160 155 153 151 148 144 MAG. 6.37 3.73 2.64 2.18 1.83 1.58 1.32 1.24 1.14 1.03 0.94 0.87 0.69 0.68 0.64 0.62 0.47 S21 ANG. (deg.) 163 −170 −151 −125 −97 −69 −43 −14 13 40 65 89 116 153 −176 −149 −114 MAG. S12 ANG. (deg.) 0.040 0.042 0.047 0.053 0.060 0.061 0.072 0.098 0.097 0.112 0.153 0.111 0.189 0.145 0.192 0.205 0.267 Caution S-parameters include bond wires. Gate : Total 2 wires, 1 per bond pad, 300 µm long each wire. Drain : Total 2 wires, 1 per bond pad, 300 µm long each wire. Source : Total 4 wires, 1 per bond pad, 300 µm long each wire. Wire 6 : 25 µm diameter, gold. Preliminary Data Sheet P14387EJ1V0DS00 105 140 −176 −140 −99 −67 −18 6 49 85 113 146 −178 −161 −119 −81 −69 MAG. 0.17 0.18 0.20 0.24 0.29 0.34 0.38 0.43 0.47 0.50 0.53 0.56 0.57 0.58 0.58 0.58 0.58 S22 ANG. (deg.) −90 −107 −118 −127 −132 −136 −138 −139 −139 −141 −145 −149 −156 −161 −166 −174 175 NE960R5 SERIES PACKAGE DIMENSIONS 3.0 MIN. PACKAGE CODE-75 (Unit: mm) Gate 3.0 MIN. 2.3 2.7 0.5 φ 1.8 Drain 2.7 7.0 2.3 1.13 0.9 MAX. 9.8 MAX. PHYSICAL DIMENSIONS NE960R500 (CHIP) (Unit: µm) NE961R500 (CHIP) (Unit: µm) 990 1000 223 228 544 G 200 90 G 305 200 Remark Chip thickness: 100 µm G Source 110 85 105 85 Source 580 Drain 570 Drain 228 100 105 544 100 100 223 90 310 Remark Chip thickness: 140 µm G : Gate : Gate Source is grounded through via hole. Preliminary Data Sheet P14387EJ1V0DS00 7 NE960R5 SERIES RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Partial Heating Soldering Conditions Recommended Condition Symbol Pin temperature: 260°C Time: 5 seconds or less (per pin row) Note Exposure limit: None – Note After opening the dry pack, keep it in a place below 25°C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). CHIP HANDLING DIE ATTACHMENT Die attach can be accomplished with a Au-Sn (300 ±10°C) performs in a forming gas environment. Epoxy die attach is not recommended. BONDING Gate and drain bonding wires should be minimum length, semi-hard gold wire (3 to 8 % elongation) 30 microns or less in diameter. Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be kept within a 280°C_5 minute curve. If longer periods are required, the temperature should be lowered. PRECAUTIONS The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean environment. The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static discharge. 8 Preliminary Data Sheet P14387EJ1V0DS00 NE960R5 SERIES [MEMO] Preliminary Data Sheet P14387EJ1V0DS00 9 NE960R5 SERIES [MEMO] 10 Preliminary Data Sheet P14387EJ1V0DS00 NE960R5 SERIES [MEMO] Preliminary Data Sheet P14387EJ1V0DS00 11 NE960R5 SERIES Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8