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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055EHE, NP88N055KHE NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP88N055EHE-E1-AY Note1, 2 NP88N055EHE-E2-AY Note1, 2 NP88N055KHE-E1-AY Note1 NP88N055KHE-E2-AY Note1 NP88N055CHE-S12-AZ Note1, 2 NP88N055DHE-S12-AY Note1, 2 NP88N055MHE-S18-AY Note1 NP88N055NHE-S18-AY Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g Sn-Ag-Cu Pure Sn (Tin) TO-220 (MP-25) typ. 1.9 g Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g (TO-220) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance (TO-262) Ciss = 7600 pF TYP. • Built-in gate protection diode (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14148EJ8V0DS00 (8th edition) Date Published October 2007 NS Printed in Japan 1999, 2000, 2007 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V ID(DC) ±88 A ID(pulse) ±352 A Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note1 Note2 Total Power Dissipation (TA = 25°C) PT1 1.8 W Total Power Dissipation (TC = 25°C) PT2 288 W Channel Temperature Tch 175 °C Tstg −55 to +175 °C Single Avalanche Current Note3 IAS 65/88 A Single Avalanche Energy Note3 EAS 422/15 mJ Storage Temperature Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 μs, Duty Cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 0.52 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W 2 Data Sheet D14148EJ8V0DS NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 55 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 μA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 3.0 4.0 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 44 A 30 60 Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 44 A Input Capacitance Ciss Coss Output Capacitance S 4.2 5.3 mΩ VDS = 25 V, 7600 11400 pF VGS = 0 V, 1100 1700 pF 480 870 pF f = 1 MHz Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) VDD = 28 V, ID = 44 A, 42 93 ns tr VGS = 10 V, 26 66 ns 120 240 ns 32 81 ns VDD = 44 V, 130 200 nC VGS = 10 V, 31 nC 49 nC IF = 88 A, VGS = 0 V 1.0 V Rise Time Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG Gate to Source Charge QGS RG = 1 Ω ID = 88 A Gate to Drain Charge QGD Body Diode Forward Voltage VF(S-D) Reverse Recovery Time trr IF = 88 A, VGS = 0 V, 62 ns Qrr di/dt = 100 A/μs 120 nC Reverse Recovery Charge TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS 90% VDS VGS 0 VDS 10% 0 10% Wave Form VDS ID τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD Data Sheet D14148EJ8V0DS 3 NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE TYPICAL CHARACTERISTICS (TA = 25°C) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 350 100 80 60 40 20 0 0 25 50 75 250 200 150 100 50 0 100 125 150 175 200 0 25 50 75 100 125 150 175 200 TC - Case Temperature - °C Figure3. FORWARD BIAS SAFE OPERATING AREA Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 100 d ite im V) ) L 0 on 1 ( S ID(DC) RD GS = (V PW ID(pulse) s 0μ s ms Po Lim wer DC ite Dis d sip a =1 0μ 10 1m 10 Single Pulse Avalanche Energy - mJ TC - Case Temperature - °C 1000 ID - Drain Current - A 300 s tio n 10 1 TC = 25°C Single Pulse 0.1 0.1 1 10 800 700 600 500 422 mJ 400 IAS = 65 A 88 A 300 200 100 15 mJ 0 25 100 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - °C VDS - Drain to Source Voltage - V Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 100 Rth(ch-A) = 83.3°C/W 10 1 Rth(ch-C) = 0.52°C/W 0.1 0.01 10 μ Single Pulse TC = 25°C 100 μ 1m 10 m 100 m 1 PW - Pulse Width - s 4 Data Sheet D14148EJ8V0DS 10 100 1 000 NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Figure6. FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 10 ID - Drain Current - A ID - Drain Current - A 500 TA = −25°C 25°C 75°C 150°C 175°C 1 0.1 400 300 VGS = 10 V 200 100 0.01 2 3 4 Pulsed VDS = 10 V 6 7 5 0 10 TA = 175°C 75°C 25°C −25°C 0.1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 15 10 5 0 VGS = 10 V 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V Pulsed 0.01 0.01 2.0 1.5 VDS - Drain to Source Voltage - V VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S VGS - Gate to Source Voltage - V 1 1.0 0.5 Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 Pulsed 5 ID = 44 A 0 0 2 4 6 8 10 12 16 18 VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VDS = VGS ID = 250 μA 4.0 3.0 2.0 1.0 0 −50 0 50 100 150 Tch - Channel Temperature - °C ID - Drain Current - A Data Sheet D14148EJ8V0DS 5 8 7 6 VGS = 10 V 5 4 3 2 1 1000 VGS = 10 V 100 0V 10 1 50 0 100 0.1 0 150 Tch - Channel Temperature - °C 1000 Ciss Coss 1000 Crss 1 10 100 tf td(off) 100 td(on) tr 10 VDD = 28 V VGS = 10 V RG = 1 Ω 1 0.1 VDS - Drain to Source Voltage - V 10 1.0 10 100 100 10 VGS 80 8 60 6 VDD = 44 V 4 40 20 2 VDS 0 IF - Diode Forward Current - A 6 100 Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/μs VGS = 0 V 100 1 0.1 10 1 ID - Drain Current - A Figure16. REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 1.5 Figure15. SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 10000 1.0 0.5 VF(S-D) - Source to Drain Voltage - V 20 40 60 80 ID = 88 A 0 100 120 140 160 QG - Gate Charge - nC Data Sheet D14148EJ8V0DS VGS - Gate to Source Voltage - V −50 100 0.1 Pulsed ID = 44 A 0 Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 VGS = 0 V f = 1 MHz Ciss, Coss, Crss - Capacitance - pF Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 9 IF - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE PACKAGE DRAWINGS (Unit: mm) Note 1.3 ± 0.2 10.0 ± 0.3 No plating 7.88 MIN. 4 2 3 1.4 ± 0.2 0.7 ± 0.2 2.54 TYP. 9.15 ± 0.3 8.0 TYP. 8.5 ± 0.2 1 5.7 ± 0.4 1.0 ± 0.5 4 4.45 ± 0.2 0.025 to 0.25 P. .5R 0 TY R 0.8 2.54 TYP. P. TY 0.5 ± 0.2 0.75 ± 0.2 0.5 ± 2.8 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 1.Gate 2.Drain 2.5 3.Source 15.5 MAX. 5.9 MIN. 4 1 0.75 ± 0.1 2.54 TYP. 1.3 ± 0.2 12.7 MIN. 6.0 MAX. 1 2 3 0.5 ± 0.2 2.8 ± 0.2 0.75 ± 0.3 2.54 TYP. 2 3 1.0 ± 0.5 10 TYP. Note 4.8 MAX. 1.3 ± 0.2 8.5 ± 0.2 1.3 ± 0.2 4.Fin (Drain) 12.7 MIN. 4.8 MAX. φ 3.6 ± 0.2 10.0 TYP. 1.3 ± 0.2 3 4)TO-262 (MP-25 Fin Cut) 4 8ο 0.25 Note 10.6 MAX. 0.2 0 to 2.54 3)TO-220 (MP-25) 1.3 ± 0.2 2.54 ± 0.25 4.8 MAX. 10 TYP. 1.35 ± 0.3 2)TO-263 (MP-25ZK) 15.25 ± 0.5 1)TO-263 (MP-25ZJ) 3.0 ± 0.3 <R> 0.5 ± 0.2 2.8 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note Not for new design Data Sheet D14148EJ8V0DS 7 NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE 6)TO-262 (MP-25SK) 1 2 3 0.8 ± 0.1 0.5 ± 0.2 2.5 ± 0.2 1.3 ± 0.2 1.27 ± 0.2 3.1 ± 0.3 4 4.45 ± 0.2 10.1 ± 0.3 15.9 MAX. 1.27 ± 0.2 2.54 TYP. 10.0 ± 0.2 13.7 ± 0.3 3 13.7 ± 0.3 1 2 4.45 ± 0.2 1.3 ± 0.2 3.1 ± 0.2 4 φ 3.8 ± 0.2 6.3 ± 0.3 2.8 ± 0.3 10.0 ± 0.2 8.9 ± 0.2 1.2 ± 0.3 5)TO-220 (MP-25K) 0.8 ± 0.1 0.5 ± 0.2 2.54 TYP. 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.5 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Gate Protection Diode Remark Body Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 8 Data Sheet D14148EJ8V0DS NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE <R> TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side <R> Reel side MARKING INFORMATION NEC 88N055 HE <R> Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Conditions Infrared reflow Maximum temperature (Package's surface temperature): 260°C or below MP-25ZJ, MP-25ZK Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Recommended Condition Symbol IR60-00-3 Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Wave soldering Maximum temperature (Solder temperature): 260°C or below MP-25, MP-25K, MP-25SK, Time: 10 seconds or less MP-25 Fin Cut Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 350°C or below MP-25ZJ, MP-25ZK, Time (per side of the device): 3 seconds or less MP-25K, MP-25SK Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 300°C or below MP-25, MP-25 Fin Cut Time (per side of the device): 3 seconds or less THDWS P350 P300 Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). Data Sheet D14148EJ8V0DS 9 NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE • The information in this document is current as of October, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1