PD - 9.1240C
IRF7304
HEXFET® Power MOSFET
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Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
VDSS = -20V
RDS(on) = 0.090Ω
T o p V iew
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
I D @ TA = 25°C
I D @ TA = 25°C
I D @ TA = 70°C
I DM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
10 Sec. Pulsed Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
-4.7
-4.3
-3.4
-17
2.0
0.016
±12
-5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient
Typ.
Max.
Units
–––
62.5
°C/W
8/25/97
IRF7304
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
IGSS
Min.
-20
–––
–––
–––
-0.70
4.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V GS = 0V, ID = -250µA
-0.012 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.090
VGS = -4.5V, ID = -2.2A
Ω
––– 0.140
VGS = -2.7V, ID = -1.8A
––– –––
V
VDS = VGS, ID = -250µA
––– –––
S
V DS = -16V, ID = -2.2A
––– -1.0
VDS = -16V, VGS = 0V
µA
––– -25
VDS = -16V, VGS = 0V, TJ = 125°C
––– -100
VGS = -12V
nA
––– 100
VGS = 12V
––– 22
ID = -2.2A
––– 3.3
nC
VDS = -16V
––– 9.0
VGS = -4.5V, See Fig. 6 and 12
8.4 –––
VDD = -10V
26 –––
ID = -2.2A
ns
51 –––
RG = 6.0Ω
33 –––
RD = 4.5Ω, See Fig. 10
D
–––
4.0
–––
LS
Internal Source Inductance
–––
6.0
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
610
310
170
–––
–––
–––
nH
Between lead tip
and center of die contact
pF
VGS = 0V
VDS = -15V
ƒ = 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -2.5
showing the
A
G
integral reverse
––– ––– -17
p-n junction diode.
S
––– ––– -1.0
V
TJ = 25°C, IS = -1.8A, VGS = 0V
–––
56
84
ns
TJ = 25°C, IF = -2.2A
–––
71 110
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I SD ≤ -2.2A, di/dt ≤− 50A/µs, VDD ≤ V (BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRF7304
100
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
1
-1 .5V
2 0µ s PU LSE W IDTH
TJ = 25 °C
A
0.1
0.01
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
-I D , D ra in -to -S o u rc e C u rre n t (A )
-I D , D ra in -to -S o u rce C u rre n t (A )
TOP
0.1
1
10
10
1
-1.5 V
2 0µ s PU LSE W IDT H
TJ = 15 0°C
0.1
0.01
100
0.1
-V D S , Drain-to-Source Voltage (V )
R D S (o n) , D ra in -to -S o u rc e O n R e s ista n ce
(N o rm a lize d )
- I D , D rain -to- S our ce C urre nt (A )
2.0
TJ = 1 5 0 ° C
1
V D S = - 15 V
2 0 µ s P U L S E W ID TH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
A
100
Fig 2. Typical Output Characteristics
100
TJ = 2 5 ° C
10
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
10
1
5.0
-VG S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
A
I D = -3.6 A
1.5
1.0
0.5
V G S = -4.5V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction T em perature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF7304
V GS
C iss
C rs s
C oss
=
=
=
=
10
0V,
f = 1 MH z
C gs + C gd , Cd s SH O R TE D
C gd
C ds + C gd
-V G S , G a te -to -S o u rce V o lta g e (V )
C , C a p a cita n ce (p F )
1500
C is s
1000
C os s
C r ss
500
0
A
1
10
I D = -2 .2A
V DS = -1 6V
8
6
4
2
FO R TES T C IR C U IT
SEE FIG U R E 1 2
0
100
0
5
-VD S , D rain-to-S ource V oltage (V)
15
20
A
25
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
-IID , Drain Current (A)
-IS D , R e ve rs e D ra in C u rre n t (A )
10
TJ = 1 50 °C
TJ = 2 5°C
1
VG S = 0 V
0.1
0.3
0.6
0.9
1.2
-V S D , Source-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.5
10
1ms
TA = 25 °C
TJ = 150 ° C
Single Pulse
1
1
10ms
10
-VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRF7304
VDS
VGS
5.0
RD
D.U.T.
RG
+
VDD
-ID , Drain Current (A)
4.0
-4.5 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
3.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
1.0
0.0
25
50
75
100
TC , Case Temperature
125
10%
VGS
150
( ° C)
td(on)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
0.20
10
Thermal Response
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7304
Current Regulator
Same Type as D.U.T.
50KΩ
QG
.2µF
12V
.3µF
-4.5 V
QGS
D.U.T.
QGD
+VDS
VGS
VG
-3mA
IG
Charge
Fig 12a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
IRF7304
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
**
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS*
+
-
*
VDD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[ VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
[ ISD ]
IRF7304
Package Outline
SO8 Outline
INCHES
DIM
D
-B-
5
8
7
1
2
6
5
3
0.25 (.010)
4
e
6X
M
A M
MIN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
e
K x 45°
e1
e1
θ
A
-C-
0.10 (.004)
L
8X
A1
B 8X
0.25 (.010)
MAX
5
H
E
-A-
6
C
8X
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
.2284
.2440
5.80
K
.011
.019
0.28
0.48
L
0.16
.050
0.41
1.27
8°
0°
8°
0°
6.20
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
6
MAX
H
θ
M C A S B S
MILLIMETERS
MIN
0.72 (.028 )
8X
6.46 ( .255 )
1.78 (.070)
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
Part Marking Information
SO8
E X A M P LE : TH IS IS A N IR F 7 101
3 12
IN T E R N A TI ON A L
R E C T IF IE R
LO G O
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
XX X X
F 7 101
T OP
PART NUMBER
W AFER
LO T C O D E
(LA S T 4 D IG IT S )
B O T TO M
IRF7304
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M BE R 1
1 2. 3 ( .48 4 )
1 1. 7 ( .46 1 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E E D D IR E C T IO N
N O TE S :
1 . CO NTR O LL IN G DIM EN S IO N : M ILL IM E TE R.
2 . A LL D IM E NS IO NS AR E S HO W N IN M ILL IM E TE R S( IN CH ES ) .
3 . O U TLINE C O N FO RM S TO E IA -4 81 & E IA - 54 1.
3 30 .00
(12 .9 92 )
MAX.
1 4.4 0 ( .5 66 )
1 2.4 0 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T LIN E C O N F O R M S T O E IA -48 1 & EIA -5 41 .
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http://www.irf.com/
Data and specifications subject to change without notice.
8/97