ON NCS2530DTBG Triple 1.1 ma 200 mhz current feedback op amp with enable feature Datasheet

NCS2530, NCS2530A
Triple 1.1 mA 200 MHz
Current Feedback Op Amp
with Enable Feature
NCS2530 is a triple 1.1 mA 200 MHz current feedback monolithic
operational amplifier featuring high slew rate and low differential gain
and phase error. The current feedback architecture allows for a
superior bandwidth and low power consumption. This device features
an enable pin.
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14
Features
•
•
•
•
•
•
•
•
−3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 200 MHz Typ
Slew Rate 450 V/ms
Supply Current 1.1 mA per amplifier
Input Referred Voltage Noise 4.0 nV/ ǸHz
THD −55 dB (f = 5.0 MHz, VO = 2.0 Vp−p)
Output Current 100 mA
Enable Pin Available
These are Pb−Free Devices
Applications
•
•
•
•
•
Portable Video
Line Drivers
Radar/Communication Receivers
Set Top Box
NTSC/PAL/HDTV
3
NORMAILIZED GAIN(dB)
2
1
VS = ±5V
VOUT = 0.5VPP
Gain = +2
RF = 1.2kW
RL = 100W
0
−2
1
1
VS = ±2.5V
VOUT = 0.7VPP
−4
−5
−6
10k
100k
NCS
2530
ALYW G
G
TSSOP−16
DT SUFFIX
CASE 948F
16
1
A
= Assembly Location
WL, L = Wafer Lot
Y
= Year
WW, W = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
VS = ±5V
VOUT = 0.7VPP
NC
1
NC
2
+−
14
OUT 2
13
−IN2
NC
3
12
+IN2
VCC
4
11
VEE
+IN1
5
10
+IN3
−IN1
6
9
−IN3
OUT1
7
8
OUT3
VS = ±5V
VOUT = 2.0VPP
−3
NCS2530AG
AWLYWW
SOIC−14 PINOUT (NCS2530A ONLY)
VS = ±2.5V
VOUT = 2.0VPP
−1
14
SOIC−14
D SUFFIX
CASE 751A
MARKING
DIAGRAM
−+
+−
NC = NO CONNECT
(Top View)
TSSOP−16 PINOUT (NCS2530 ONLY)
VS = ±2.5V
VOUT = 0.5VPP
1M
10M
FREQUENCY (Hz)
100M
1G
Figure 1. Frequency Response:
Gain (dB) vs. Frequency Av = +2.0, RL = 100 W
−IN1
1
−
16
EN1
+IN1
2
+
15
OUT1
VEE
3
14
VCC
−IN2
4
−
13
EN2
+IN2
5
+
12
OUT2
VEE
6
11
VCC
+IN3
7
+
10
OUT3
8
−
9
−IN3
EN3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 1
1
Publication Order Number:
NCS2530/D
NCS2530, NCS2530A
PIN FUNCTION DESCRIPTION
SOIC−14
(NCS2530A Only)
TSSOP−16
(NCS2530 Only)
Symbol
Function
7, 8, 14
10, 12, 15
OUTx
Output
Equivalent Circuit
VCC
ESD
OUT
VEE
11
3, 6
VEE
Negative Power
Supply
5, 10, 12
2, 5, 7
+INx
Non−inverted Input
VCC
ESD
ESD
+IN
−IN
VEE
6, 9, 13
1, 4, 8
−INx
Inverted Input
4
11, 14
VCC
Positive Power
Supply
N/A
9, 13, 16
EN
Enable
See Above
VCC
EN
ESD
VEE
ENABLE PIN TRUTH TABLE (NCS2530 Only)
Enable
High*
Low
Enabled
Disabled
*Default open state
VCC
+IN
OUT
−IN
CC
VEE
Figure 2. Simplified Device Schematic
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2
NCS2530, NCS2530A
ATTRIBUTES
Characteristics
ESD
Value
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2)
Flammability Rating
Level 1
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltage
VS
11
VDC
Input Voltage Range
VI
vVS
VDC
Input Differential Voltage Range
VID
vVS
VDC
Output Current
IO
100
mA
Maximum Junction Temperature (Note 3)
TJ
150
°C
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature Range
Tstg
−60 to +150
°C
Power Dissipation
PD
(See Graph)
mW
RqJA
178
156
°C/W
Thermal Resistance, Junction−to−Air
TSSOP−16
SOIC−14
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
MAXIMUM POWER DISSIPATION
MAXIMUM POWER DISSIPATION (mW)
1400
The maximum power that can be safely dissipated is
limited by the associated rise in junction temperature. For
the plastic packages, the maximum safe junction
temperature is 150°C. If the maximum is exceeded
momentarily, proper circuit operation will be restored as
soon as the die temperature is reduced. Leaving the device
in the “overheated’’ condition for an extended period can
result in device damage.
1200
SOIC−14
1000
800
TSSOP−16
600
400
200
0
−50
−25
0
25
50
75
100
125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Power Dissipation vs. Temperature
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NCS2530, NCS2530A
AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
BW
GF0.1dB
Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal
0.1 dB Gain Flatness Bandwidth
AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 2.0 Vp−p
200
140
MHz
AV = +2.0
30
MHz
dG
Differential Gain
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.02
%
dP
Differential Phase
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.1
°
Slew Rate
AV = +2.0, Vstep = 2.0 V
450
V/ms
Settling Time
0.01%
0.1%
AV = +2.0, Vstep = 2.0 V
AV = +2.0, Vstep = 2.0 V
35
18
(10%−90%) AV = +2.0, Vstep = 2.0 V
5
ns
TIME DOMAIN RESPONSE
SR
ts
ns
tr tf
Rise and Fall Time
tON
Turn−on Time (Note 4)
900
ns
tOFF
Turn−off Time (Note 4)
500
ns
HARMONIC/NOISE PERFORMANCE
THD
Total Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p, RL = 150 W
−55
dBc
HD2
2nd Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−67
dBc
HD3
3rd Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−57
dBc
IP3
Third−Order Intercept
f = 10 MHz, VO = 2.0 Vp−p
35
dBm
Spurious−Free Dynamic Range
f = 5.0 MHz, VO = 2.0 Vp−p
58
dBc
SFDR
eN
Input Referred Voltage Noise
f = 1.0 MHz
4
nVń ǸHz
iN
Input Referred Current Noise
f = 1.0 MHz, Inverting
f = 1.0 MHz, Non−Inverting
15
15
pAń ǸHz
4. Applies to NCS2530 device only.
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NCS2530, NCS2530A
DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
−4.0
"0.7
+4.0
Unit
DC PERFORMANCE
VIO
DVIO/D
T
IIB
DIIB/DT
Input Offset Voltage
Input Offset Voltage Temperature
Coefficient
Input Bias Current
Input Bias Current Temperature
Coefficient
VIH
Input High Voltage (Enable)
(Note 5 and 6)
VIL
Input Low Voltage (Enable)
(Note 5 and 6)
6.0
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V (Note 5)
−5.0
−5.0
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V
"2.0
"0.4
mV
mV/°C
+5.0
+5.0
mA
nA/°C
"40
"10
VCC − 1.5 V
V
VCC − 3.5 V
V
INPUT CHARACTERISTICS
VCM
CMRR
Input Common Mode Voltage
Range (Note 5)
Common Mode Rejection Ratio
RIN
Input Resistance
CIN
Differential Input Capacitance
"3.0
(See Graph)
50
+Input (Non−Inverting)
−Input (Inverting)
V
"4.0
55
dB
4.0
350
MW
W
1.0
pF
0.02
12
W
OUTPUT CHARACTERISTICS
ROUT
Output Resistance
Closed Loop
Open Loop
VO
Output Voltage Swing
"3.0
"3.5
V
IO
Output Current
"60
"100
mA
0.6
1.1
2.0
mA
0.5
mA
POWER SUPPLY
VS
Operating Voltage Supply
10
V
IS,ON
Power Supply Current − Enabled
(per amplifier)
VO = 0 V
IS,OFF
Power Supply Current − Disabled
(per amplifier) (Note 6)
VO = 0 V
0.35
Channel to Channel, f = 5.0 MHz
60
dB
60
dB
Crosstalk
PSRR
Power Supply Rejection Ratio
(See Graph)
5. Guaranteed by design and/or characterization.
6. Applies to NCS2530 device only.
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5
50
NCS2530, NCS2530A
AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
BW
GF0.1dB
Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal
MHz
AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 1.0 Vp−p
180
130
AV = +2.0
15
MHz
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.02
%
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.1
°
Slew Rate
AV = +2.0, Vstep = 1.0 V
350
V/ms
Settling Time
0.01%
0.1%
AV = +2.0, Vstep = 1.0 V
AV = +2.0, Vstep = 1.0 V
40
18
(10%−90%) AV = +2.0, Vstep = 1.0 V
8.0
ns
0.1 dB Gain Flatness Bandwidth
dG
Differential Gain
dP
Differential Phase
TIME DOMAIN RESPONSE
SR
ts
ns
tr tf
Rise and Fall Time
tON
Turn−on Time (Note 7)
900
ns
tOFF
Turn−off Time (Note 7)
500
ns
HARMONIC/NOISE PERFORMANCE
THD
Total Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p, RL = 150 W
−55
dBc
HD2
2nd Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−67
dBc
HD3
3rd Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−57
dBc
IP3
Third−Order Intercept
f = 10 MHz, VO = 1.0 Vp−p
35
dBm
Spurious−Free Dynamic Range
f = 5.0 MHz, VO = 1.0 Vp−p
58
dBc
SFDR
eN
Input Referred Voltage Noise
f = 1.0 MHz
4.0
nVń ǸHz
iN
Input Referred Current Noise
f = 1.0 MHz, Inverting
f = 1.0 MHz, Non−Inverting
15
15
pAń ǸHz
7. Applies to NCS2530 device only.
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NCS2530, NCS2530A
DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
−4.0
"0.5
+4.0
mV
DC PERFORMANCE
VIO
DVIO/DT
IIB
DIIB/DT
Input Offset Voltage
Input Offset Voltage
Temperature Coefficient
6.0
Input Bias Current
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V (Note 8)
Input Bias Current Temperature
Coefficient
VIH
Input High Voltage (Enable)
(Note 8 and 9)
VIL
Input Low Voltage (Enable)
(Note 8 and 9)
−5.0
−5.0
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V
"2.0
"0.4
mV/°C
+5.0
+5.0
mA
nA/°C
"40
"10
VCC − 1.5 V
V
VCC − 3.5 V
V
INPUT CHARACTERISTICS
VCM
CMRR
Input Common Mode Voltage
Range (Note 8)
"1.3
Common Mode Rejection Ratio
RIN
Input Resistance
CIN
Differential Input Capacitance
(See Graph)
50
+Input (Non−Inverting)
−Input (Inverting)
V
"1.5
55
dB
4.0
350
MW
W
1.0
pF
0.02
12
W
OUTPUT CHARACTERISTICS
ROUT
Output Resistance
Closed Loop
Open Loop
VO
Output Voltage Swing
"1.0
"1.4
V
IO
Output Current
"40
"80
mA
5.0
V
POWER SUPPLY
VS
Operating Voltage Supply
IS,ON
Power Supply Current −
Enabled (per amplifier)
VO = 0 V
IS,OFF
Power Supply Current −
Disabled (per amplifier) (Note 9)
VO = 0 V
Crosstalk
PSRR
0.5
Channel to Channel, f = 5.0 MHz
Power Supply Rejection Ratio
(See Graph)
50
8. Guaranteed by design and/or characterization.
9. Applies to NCS2530 device only.
VIN
+
−
VOUT
RL
RF
RF
Figure 4. Typical Test Setup
(AV = +2.0, RF = 1.8 kW or 1.2 kW or 1.0 kW, RL = 100 W)
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0.9
1.9
mA
0.15
0.35
mA
60
mA
60
dB
NCS2530, NCS2530A
2
NORMAILIZED GAIN(dB)
6
Gain = +2
RF = 1.2kW
RL = 100W
1
0
VS = ±2.5V
VOUT = 0.5VPP
VS = ±5V
VOUT = 0.5VPP
NORMALIZED GAIN (dB)
3
VS = ±2.5V
VOUT = 2.0VPP
−1
−2
VS = ±5V
VOUT = 2.0VPP
−3
VS = ±2.5V
VOUT = 0.7VPP
VS = ±2.5V
VOUT = 0.7VPP
−4
−5
−6
10k
100k
1M
10M
FREQUENCY (Hz)
Gain = +1
RF = 1.2kW
RL = 100W
3
VS = ±5V
VOUT = 0.7VPP
−3
VS = ±2.5V
VOUT = 0.7VPP
−6
−12
10k
1G
Figure 5. Frequency Response:
Gain (dB) vs. Frequency
Av = +2.0
100k
1M
10M
FREQUENCY (Hz)
6
VS = ±5V
AV = +4
NORMAILIZED GAIN(dB)
NORMALIZED GAIN (dB)
VS = ±5V
VOUT = 1.0VPP
VS = ±2.5V
VOUT = 1.0VPP
0
VS = ±2.5V
AV = +2
−3
VS = ±5V
AV = +2
−6
VOUT = 2.0VPP
RL = 100W
−9
−12
10k
100k
VS = ±2.5V
AV = +4
1M
10M
FREQUENCY (Hz)
100M
1G
Figure 6. Frequency Response:
Gain (dB) vs. Frequency
Av = +1.0
6
3
VS = ±2.5V
VOUT = 0.5VPP
0
−9
100M
VS = ±5V
VOUT = 0.5VPP
VS = ±5V
AV = +4
3
VS = ±2.5V
AV = +1
−3
VS = ±2.5V
AV = +4
−6
VOUT = 0.5VPP
RL = 100W
−12
10k
1G
Figure 7. Large Signal Frequency Response
Gain (dB) vs. Frequency
VS = ±5V
AV = +1
0
−9
100M
VS = ±5V
AV = +2
100k
VS = ±2.5V
AV = +4
1M
10M
FREQUENCY (Hz)
100M
Figure 8. Small Signal Frequency Response
Gain (dB) vs. Frequency
VS = ±5V
VS = ±5V
Figure 9. Small Signal Step Response
Vertical: 500 mV/div
Horizontal: 10 ns/div
Figure 10. Large Signal Step Response
Vertical: 500 mV/div
Horizontal: 10 ns/div
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8
1G
NCS2530, NCS2530A
−40
−40
VS = ±5V
VOUT = 2VPP
RL = 150W
−50
−55
THD
−60
HD3
−65
HD2
−70
−50
THD
−55
−70
−80
10M
100M
FREQUENCY (Hz)
1G
Figure 11. THD, HD2, HD3 vs. Frequency
7
−20
6
−25
±2.5V
0.5
1
1.5
2
2.5
VOUT (VPP)
3
3.5
4
VS = ±5V
−30
5
4
±5.0V
3
HD2
Figure 12. THD, HD2, HD3 vs. Output Voltage
CMRR (dB)
VOLTAGE NOISE (nV/pHz)
HD3
−60
−65
−75
2
−35
−40
−45
−50
−55
1
−60
0
−65
10k
1k
10k
100k
FREQUENCY (Hz)
1M
Figure 13. Input Referred Noise vs. Frequency
−10
0.04
−30
−40
+2.5
−2.5V
−50
−5.0V
DIFFERENTIAL GAIN (%)
0.06
+5.0V
1M
10M
FREQUENCY (Hz)
10M
100M
0.02
VS = ±5V
RL = 150W
4.43MHz
3.58MHz
0
10MHz
−0.04
100k
1M
FREQUENCY (Hz)
−0.02
−60
−70
10k
100k
Figure 14. CMRR vs. Frequency
0
−20
PSRR(dB)
VS = ±5V
f = 5MHz
RL = 150W
−45
DISTORTION (dB)
DISTORTION (dB)
−45
−0.06
−0.8
100M
Figure 15. PSRR vs. Frequency
20MHz
−0.6
−0.4 −0.2
0
0.2
0.4
OFFSET VOLTAGE (V)
Figure 16. Differential Gain
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9
0.6
0.8
NCS2530, NCS2530A
0.06
1.4
10MHz
1.2
0.02
0
4.43MHz
−0.02
3.58MHz
VS = ±5V
RL = 150W
−0.6
25°C
1.1
1
0.9
−40°C
0.8
−0.04
−0.06
−0.8
85°C
1.3
CURRENT (mA)
DIFFERENTIAL PHASE (°)
20MHz
0.04
0.2
0.4
−0.4 −0.2
0
OFFSET VOLTAGE (V)
0.7
0.6
0.8
0.6
4
Figure 17. Differential Phase
11
8
25°C
−40°C
.1
.08
.06
.04
7
OUTPUT VOLTAGE (VPP)
CURRENT (mA)
10
85°C
.12
4
5
7
9
6
8
POWER SUPPLY VOLTAGE (V)
10
25°C
6
85°C
5
−40°C
4
3
.02
2
11
4
5
6
7
9
8
SUPPLY VOLTAGE (V)
10
11
Figure 19. Supply Current per Amplifier vs.
Power Supply vs. Temperature (Disabled)
(NCS2530 Only)
Figure 20. Output Voltage Swing vs. Supply Voltage
9
100
8
VS = ±5V
OUTPUT RESISTANCE (W)
OUTPUT VOLTAGE (VPP)
7
9
6
8
POWER SUPPLY VOLTAGE (V)
Figure 18. Supply Current per Amplifier vs.
Power Supply vs. Temperature (Enabled)
.14
0
5
7
6
5
VS = ±2.5V
4
3
2
AV = +2
f = 1MHz
1
0
1
10
100
1000
LOAD RESISTANCE (W)
VS = ±5V
10
1
0.1
0.01
10k
10k
Figure 21. Output Voltage Swing vs. Load
Resistance
100k
10M
1M
FREQUENCY (Hz)
Figure 22. Output Impedance vs. Frequency
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10
100M
NCS2530, NCS2530A
10M
12
1M
TRANSIMPEDANCE (W)
18
GAIN (dB)
6
0
100pF
−6
−12
VS = ±5V
RF = 1.2kW
RL = 100W
Gain= +2
−18
−24
−30
47pF
1M
10pF
VS = ±5V
100k
10k
1k
100
10
10M
100M
FREQUENCY (Hz)
1
10k
1G
Figure 23. Frequency Response vs. Capacitive
Load
100k
10M
1M
100M
FREQUENCY (Hz)
VS = ±5V
EN
OUT
Figure 25. Turn ON Time Delay
Vertical: 10 mV/Div, Horizontal: 4 ns/Div
(Output Signal: Square Wave, 10 MHz, 2 Vpp)
(NCS2530 Only)
2
Gain = +2
VS = ±5V
1
NORMAILIZED GAIN(dB)
CROSSTALK (dBc)
−10
−20
Channel 1
−40
−50
Channel 3
−60
−70
OUT
Figure 26. Turn OFF Time Delay
Vertical: 10 mV/Div, Horizontal: 4 ns/Div
(Output Signal: Square Wave, 10 MHz, 2 Vpp)
(NCS2530 Only)
0
−30
10G
Figure 24. Transimpedance (ROL) vs. Frequency
VS = ±5V
EN
1G
100M
FREQUENCY (Hz)
1G
3
0
1
−1
−2
−3
−4
−5
10M
2
−6
10k
Figure 27. Crosstalk (dBc) vs. Frequency
(Crosstalk measured on Channel 2 with input signal
on Channel 1 and 3)
Gain = +2
VS = ±5V
100k
1M
10M
FREQUENCY (Hz)
100M
Figure 28. Channel Matching Gain (dB)
vs. Frequency
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11
1G
NCS2530, NCS2530A
General Design Considerations
Printed Circuit Board Layout Techniques
The current feedback amplifier is optimized for use in
high performance video and data acquisition systems. For
current feedback architecture, its closed−loop bandwidth
depends on the value of the feedback resistor. The
closed−loop bandwidth is not a strong function of gain, as is
for a voltage feedback amplifier, as shown in Figure 29.
Proper high speed PCB design rules should be used for all
wideband amplifiers as the PCB parasitics can affect the
overall performance. Most important are stray capacitances
at the output and inverting input nodes as it can effect
peaking and bandwidth. A space (3/16″ is plenty) should be
left around the signal lines to minimize coupling. Also,
signal lines connecting the feedback and gain resistors
should be short enough so that their associated inductance
does not cause high frequency gain errors. Line lengths less
than 1/4″ are recommended.
10
GAIN (dB)
5
RF = 1 kW
0
Video Performance
RF = 1.2 kW
−5
This device designed to provide good performance with
NTSC, PAL, and HDTV video signals. Best performance is
obtained with back terminated loads as performance is
degraded as the load is increased. The back termination
reduces reflections from the transmission line and
effectively masks transmission line and other parasitic
capacitances from the amplifier output stage.
RF = 1.8 kW
−10
−15
AV = +2
VCC = +5 V
VEE = −5 V
−20
0.01
0.1
1.0
10
100
1000
Video Line Driver
10000
NCS2530 can be used in video line driver applications.
Figure 30 shows a typical schematic for a video driver. In
some applications, two or more video loads have to be
driven simultaneously as shown in Figure 31. Figure 32
shows the typical performance of the op amp with single and
triple video load.
FREQUENCY (MHz)
Figure 29. Frequency Response vs. RF
The −3.0 dB bandwidth is, to some extent, dependent on
the power supply voltages. By using lower power supplies,
the bandwidth is reduced, because the internal capacitance
increases. Smaller values of feedback resistor can be used at
lower supply voltages, to compensate for this affect.
VIN
Z = 75 W
75 W
Feedback and Gain Resistor Selection for Optimum
Frequency Response
Z = 75 W
RF
A current feedback operational amplifier’s key advantage
is the ability to maintain optimum frequency response
independent of gain by using appropriate values for the
feedback resistor. To obtain a very flat gain response, the
feedback resistor tolerance should be considered as well.
Resistor tolerance of 1% should be used for optimum
flatness. Normally, lowering RF resistor from its
recommended value will peak the frequency response and
extend the bandwidth while increasing the value of RF
resistor will cause the frequency response to roll off faster.
Reducing the value of RF resistor too far below its
recommended value will cause overshoot, ringing, and
eventually oscillation.
Since each application is slightly different, it is worth
some experimentation to find the optimal RF for a given
circuit. A value of the feedback resistor that produces
X0.1 dB of peaking is the best compromise between
stability and maximal bandwidth. It is not recommended to
use a current feedback amplifier with the output shorted
directly to the inverting input.
VOUT
75 W
+
−
75 W
RG
Figure 30. Video Driver Schematic
75 W
Z = 75 W
VOUT1
75 W
VIN
Z = 75 W
75 W
75 W
+
−
Z = 75 W
75 W
RF
RG
75 W
Z = 75 W
75 W
Figure 31. Video Driver Schematic
for Three Video Loads
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12
VOUT2
VOUT3
NCS2530, NCS2530A
NORMALIZED GAIN (dB)
3
0
series resistors. Keep these resistor values as low as possible
since high values degrade both noise performance and
frequency response. Under closed−loop operation, the ESD
diodes have no effect on circuit performance. However,
under certain conditions the ESD diodes will be evident. If
the device is driven into a slewing condition, the ESD diodes
will clamp large differential voltages until the feedback loop
restores closed−loop operation. Also, if the device is
powered down and a large input signal is applied, the ESD
diodes will conduct.
Note: Human Body Model for +IN and –IN pins are rated
at 0.8 kV while all other pins are rated at 2.0 kV.
SINGLE LOAD
−3
TRIPLE LOAD
−6
−9
−12
Gain = +2
VS = ±5 V
RF = 1.2 kW
RG = 1.2 kW
10k
100k
1M
10M
100M
1G
10G
VCC
FREQUENCY (Hz)
Figure 32. Frequency Response with Various Loads
External
Pin
ESD Protection
All device pins have limited ESD protection using internal
diodes to power supplies as specified in the attributes table
(See Figure 33). These diodes provide moderate protection
to input overdrive voltages above the supplies. The ESD
diodes can support high input currents with current limiting
Internal
Circuitry
VEE
Figure 33. Internal ESD Protection
ORDERING INFORMATION
Package
Shipping †
NCS2530ADG
SOIC−14
(Pb−Free)
55 Units / Rail
NCS2530ADR2G
SOIC−14
(Pb−Free)
2500 / Tape & Reel
NCS2530DTBG
TSSOP−16*
96 Units / Rail
NCS2530DTBR2G
TSSOP−16*
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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13
NCS2530, NCS2530A
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
−A−
14
8
−B−
P 7 PL
0.25 (0.010)
M
7
1
G
−T−
D 14 PL
0.25 (0.010)
T B
S
A
DIM
A
B
C
D
F
G
J
K
M
P
R
J
M
K
M
F
R X 45 _
C
SEATING
PLANE
B
M
S
SOLDERING FOOTPRINT*
7X
7.04
14X
1.52
1
14X
0.58
1.27
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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14
MILLIMETERS
MIN
MAX
8.55
8.75
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337 0.344
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0_
7_
0.228 0.244
0.010 0.019
NCS2530, NCS2530A
PACKAGE DIMENSIONS
TSSOP−16
CASE 948F−01
ISSUE B
16X K REF
0.10 (0.004)
0.15 (0.006) T U
T U
M
S
V
S
K
S
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
N
8
1
0.25 (0.010)
M
0.15 (0.006) T U
S
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
SOLDERING FOOTPRINT*
7.06
1
0.65
PITCH
16X
0.36
16X
1.26
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
15
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
NCS2530, NCS2530A
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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Phone: 81−3−5773−3850
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16
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCS2530/D