BC556/557/558/559/560 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier • High Voltage: BC556, VCEO = -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage : BC556 : BC557/560 : BC558/559 Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Symbol ICBO hFE VCE(sat) Ta = 25°C unless otherwise noted Value Units -80 -50 -30 V V V -65 -45 -30 -5 -100 500 150 -65 ~ 150 V V V V mA mW C C Ta = 25C unless otherwise noted Parameter Test Condition VBE(sat) Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage VBE(on) Base-Emitter On Voltage fT Current Gain Bandwidth Product Cob NF Output Capacitance Noise Figure : BC556/557/558 : BC559/560 : BC559 : BC560 VCB= -30V, IE=0 VCE= -5V, IC=2mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA VCE= -5V, IC= -10mA, f=10MHz VCB= -10V, IE=0, f=1MHz VCE= -5V, IC= -200A f=1KHz, RG=2K VCE= -5V, IC= -200A RG=2Kf=30~15000MHz Min. Typ. 110 -600 -90 -250 -700 -900 -660 Max. Units -15 800 -300 -650 nA -750 -800 150 2 1 1.2 1.2 6 10 4 4 2 mV mV mV mV mV mV MHz pF dB dB dB dB hFE Classification Classification hFE A 110 ~ 220 B 200 ~ 450 © 2012 Fairchild Semiconductor Corporation BC556/557/558/559/560 Rev. B0 C 420 ~ 800 www.fairchildsemi.com 1 BC556/557/558/559/560 — PNP Epitaxial Silicon Transistor October 2012 1000 -50 IB = -400A VCE = -5V IB = -350A -40 IB = -300A -35 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -45 IB = -250A -30 IB = -200A -25 -20 IB = -150A -15 IB = -100A -10 100 10 IB = -50A -5 1 -0.1 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -1 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -100 -10 VBE(sat) -1 VCE = -5V IC[mA], COLLECTOR CURRENT IC = -10 IB -0.1 VCE(sat) -10 -1 -0.1 -0.01 -0.1 -1 -10 -0.2 -100 -0.4 f=1MHz IE = 0 1 -1 -10 -100 -1.0 -1.2 1000 VCE = -5V 100 10 -1 -10 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product © 2012 Fairchild Semiconductor Corporation BC556/557/558/559/560 Rev. B0 -0.8 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 -0.6 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Cob(pF), CAPACITANCE -10 www.fairchildsemi.com 2 BC556/557/558/559/560 — PNP Epitaxial Silicon Transistor Typical Performance Characteristics BC556/557/558/559/560 — PNP Epitaxial Silicon Transistor Physical Dimensions TO-92 D Dimensions in Millimeters © 2012 Fairchild Semiconductor Corporation BC556/557/558/559/560 Rev. 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