Jiangsu D965 Transistorï¼ npn ï¼ Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
D965
TO—92
TRANSISTOR( NPN )
FEATURES
1.EMITTER
Power dissipation
PCM : 0.75
W(Tamb=25℃)
Collector current
ICM :
5
A
Collector-base voltage
V(BR)CBO : 42
V
Operating and storage junction temperature range
T J ,T stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Symbol
2. COLLECTOR
3. BASE
1 2 3
unless
Test
otherwise
conditions
specified)
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=1mA, IE=0
42
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 1
mA, IB=0
22
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 10
μA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 30 V , IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 6 V, IC=0
0.1
μA
DC current gain
Collector-emitter saturation voltage
HFE(1)
VCE= 2 V,
mA
IC= 0.15
HFE(2)
VCE= 2V,
HFE(3)
VCE= 2V,
mA
VCE(sat)
IC=3000mA,IB=100 mA
IC = 500 mA
IC = 2000
150
340
950
150
0.35
CLASSIFICATION OF HFE(2)
Rank
R
T
Range
340-600
560-950
V
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
E
C
A
A1
D
b
L
φ
e
e1
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
3.300
3.700
0.130
0.146
A1
1.100
1.400
0.043
0.055
b
0.380
0.550
0.015
0.022
c
0.360
0.510
0.014
0.020
D
4.400
4.700
0.173
0.185
D1
3.430
E
4.300
0.135
4.700
0.169
1.270TYP
e
0.185
0.050TYP
e1
2.440
2.640
0.096
0.104
L
14.100
14.500
0.555
0.571
1.600
Ö
0.000
0.380
0.063
0.000
0.015
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