VS-MBRS190TRPbF, VS-MBRS1100TRPbF Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode SMB • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY Package DO-214AA (SMB) IF(AV) 1A VR 90 V, 100 V VF at IF 0.78 V IRM 1 mA at 125 °C TJ max. 175 °C Diode variation Single die EAS 1.0 mJ DESCRIPTION The VS-MBRS190TRPbF, VS-MBRS1100TRPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES UNITS Rectangular waveform VRRM 1.0 A 90/100 V IFSM tp = 5 μs sine 870 A VF 1.0 Apk, TJ = 125 °C 0.63 V TJ Range - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-MBRS190TRPbF VS-MBRS1100TRPbF UNITS 90 100 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) TEST CONDITIONS 50 % duty cycle at TL = 147 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied VALUES UNITS 1.0 870 A Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A Document Number: 94315 Revision: 05-Jul-10 10 ms sine or 6 ms rect. pulse For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 50 www.vishay.com 1 VS-MBRS190TRPbF, VS-MBRS1100TRPbF Schottky Rectifier, 1.0 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop See fig. 1 VFM (1) Maximum reverse leakage current See fig. 2 IRM (1) Typical junction capacitance Typical series inductance Maximum voltage rate of change TEST CONDITIONS 1A TJ = 25 °C 0.78 TJ = 125 °C 0.62 TJ = 125 °C VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C LS Measured lead to lead 5 mm from package body UNITS V 0.5 VR = Rated VR CT dV/dt VALUES TJ = 25 °C mA 1.0 42 pF 2.0 nH 10 000 V/μs VALUES UNITS - 55 to 175 °C Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg TEST CONDITIONS Maximum thermal resistance, junction to lead RthJL (2) DC operation See fig. 4 36 Maximum thermal resistance, junction to ambient RthJA DC operation 80 Approximate weight Marking device Case style SMB (similar to DO-214AA) °C/W 0.10 g 0.003 oz. V19/V10 Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94315 Revision: 05-Jul-10 VS-MBRS190TRPbF, VS-MBRS1100TRPbF Schottky Rectifier, 1.0 A 10 Vishay Semiconductors 10 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) TJ = 175 °C TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 1 TJ = 150 °C TJ = 125 °C 0.1 TJ = 100 °C 0.01 TJ = 75 °C TJ = 50 °C 0.001 0.0001 TJ = 25 °C 0.00001 0.1 0.2 0.4 0.6 0.8 0 1.0 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 20 40 60 80 100 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 100 10 PDM t1 1 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC . 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Document Number: 94315 Revision: 05-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-MBRS190TRPbF, VS-MBRS1100TRPbF Schottky Rectifier, 1.0 A 1.0 180 170 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 160 Average Power Loss (W) Allowable Case Temperature (°C) Vishay Semiconductors 150 140 Square wave (D = 0.50) Rated VR applied 130 120 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 0.8 0.6 RMS limit 0.4 DC 0.2 See note (1) 0 110 0 0.4 0.8 1.2 0 1.6 0.3 0.6 0.9 1.2 1.5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94315 Revision: 05-Jul-10 VS-MBRS190TRPbF, VS-MBRS1100TRPbF Schottky Rectifier, 1.0 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 1 2 S 1 100 TR PbF 3 4 5 6 7 1 - Vishay Semiconductors product suffix 2 - Schottky MBR series 3 - S = SMB 4 - Current rating (1 = 1 A) 5 - Voltage rating 90 = 90 V 100 = 100 V 6 - TR = Tape and reel (3000 pieces) 7 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95017 Part marking information www.vishay.com/doc?95029 Packaging information www.vishay.com/doc?95034 Document Number: 94315 Revision: 05-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 Outline Dimensions Vishay High Power Products SMB DIMENSIONS in millimeters (inches) 2.15 (0.085) 1.80 (0.071) 3.80 (0.150) 3.30 (0.130) 1 2 1 Polarity 4.70 (0.185) 4.10 (0.161) 2.5 TYP. (0.098 TYP.) 2 Part Number Soldering pad 2.40 (0.094) 1.90 (0.075) 1.30 (0.051) 0.76 (0.030) 5.60 (0.220) 5.00 (0.197) 0.30 (0.012) 0.15 (0.006) 2.0 TYP. (0.079 TYP.) 4.2 (0.165) 4.0 (0.157) Document Number: 95017 Revision: 25-Jun-07 For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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