ETC1 NX26F011A 1m-bit and 4m-bit serial flash memory with 2-pin nxs interface Datasheet

NX26F011A
NX26F041A
NX26F011A
NX26F041A
1M-BIT AND 4M-BIT SERIAL FLASH MEMORY
WITH 2-PIN NXS INTERFACE
PRE-RELEASE
MAY 1999
2
FEATURES
• Tailored for Portable and Mobile Media-Storage
– Ideal for portable/mobile applications that transfer
and store data, audio, or images
– Removable Serial Flash Module package option
• NexFlash ™ Non-volatile Memory Technology
– Patented Single-Transistor EEPROM Cell
– High-density, cost-effective, low-voltage/power
– 10K/100K endurance, ten years data retention
• Flash Memory for Battery-Operation
– Single 5V or 3V supply for Read, Erase/Write
– Icc 5 mA active with 1 µA standby power
– 5 ms Erase/Write times for efficient battery use
1
• 1M-bits or 4M-bits of NexFlash Serial Memory
– 512 or 2,048 sectors of 264 bytes each
– Simple commands: Reset, Read, Write,
Ready/Busy
– No pre-erase required, auto-erases before write
3
• Two-pin NXS Serial Interface
– Saves Microcontroller-pins, simplifies PCB layout,
low switching noise compared to parallel Flash
– Supports clock operation as fast as 16 MHz
– Multi-device cascading, up to 16 devices
• Development Tools and Accessories
– SFK-NXS Serial Flash Development Kit
4
5
6
7
8
Description
The NexFlash™ NX26F011A and NX26F041A Serial Flash
Memories are tailored for portable/mobile media-storage
applications that transfer and store data, audio and images.
Manufactured using NexFlash’s patented single transistor
EEPROM memory cell, the NX26F011A and NX26F041A
provide a high-density, low-voltage, low-power, and cost
effective solution for battery-operated nonvolatile data
storage requirements. The NX26F011A and NX26F041A
can operate with a single 5V or 3V supply for Read, Write,
and Erase. Power consumption is very low due to µA
standby current and fast Erase/Write performance (as fast
as 5 ms per sector) that minimizes power-on time, resulting
in a highly efficient energy-per-transfer ratio. The NX26F011A
and NX26F041A offer 1M-bits and 4M-bits of Flash memory
organized in sectors of 264 bytes each. Each sector is
individually addressable through basic commands or
control functions such as Reset, Read, Erase/Write, and
Ready/Busy. The NXS (NexFlash Serial) 2-wire serial
interface is ideal for use with microcontrollers since it only
requires two pins. This leaves pins normally used for parallel
Flash free for other uses. The NXS interface supports clock
rates as fast as 16 MHz and allows for multi-device cascading
of up to 16 devices. It also simplifies PC-board layout and
generates less transient noise than parallel devices. Development is supported with the NexFlash Serial Flash
Development Kit.
This document contains PRELIMINARY INFORMATION. NexFlash reserves the right to make changes to its product at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication.  Copyright 1998, NexFlash Technologies, Inc.
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
1
9
10
11
12
NX26F011A
NX26F041A
Pin Descriptions
Package Types
The NX26F011A and NX26F041A is available in a 24/28-pin
TSOP (Type II) package (Figure 1 and Table 1) or a
removable Serial Flash Module (see NX25Mxxx/NX26Mxxx
Serial Flash Module data sheet for further information).
Power Supply Pins (Vcc and GND)
The NX26F011A and NX26F041A support single power supply Read, Erase, and Write operations available in 5V and 3V
Vcc versions. Active power requirements are as low as 15 mA
for 3V versions with standby current in the 1 µA range.
NXS Serial Interface Pins (SCK and SIO)
The 2-wire NXS (NexFlash Serial) interface includes a
Clock Input pin (SCK) and a single bidirectional I/O pin for
data (SIO). All data to or from the SIO pin is clocked
relative to the rising edge of SCK. The 2-wire NXS serial
interface makes the NX26F011A and NX26F041A an ideal
solution for removable non-volatile storage. A simple edge
connector or cable/connector with four contacts (SCK,
SIO, Vcc, and GND) can support communications with
space efficiency and reliability. The NXS interface can
operate at clock rates up to 16 MHz for 5V versions.
A0
NC
A2
NC
NC
VCC
GND
NC
NC
NC
A3
SCK
A1
SIO
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
Device Address Pins (A0, A1, A2, A3)
There is no active chip select on the NX26F011A and
NX26F041A. Instead, four static device address pins
(A0, A1, A2, and A3) are provided for decoding from one to
16 possible devices (Figure 2). This allows up to 4MB (using
an NX26F011A device) or 32MB (using an NX26F041A
device) to be addressed via a single 2-wire NXS interface.
The static address pins (A0-A3) must be tied high or low to
match the device address field (DA3-DA0) in the sector
Read and Erase/Write instruction sequences.
No Connect Pins (N/C)
The NX26F011A and NX26F041A uses only a few signal
pins. As a result, the TSOP package has numerous
no connects (NC) that have no electrical contact to the die.
Table 1. Pin Descriptions
A0, A1, A2, A3
SCK
SIO
Vcc
GND
NC
Device Address
Serial Clock
Serial Data I/O
Power Supply
Ground
No Connect
Figure 1. NX26F011A and NX26F041A Pin
Assignments
2
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
NX26F011A
NX26F041A
MICROCONTROLLER / MICROPROCESSOR
DSP or ASIC
NX26F011A or
NX26F041A
U3
NX26F011A or
NX26F041A
U2
NX26F011A or
NX26F041A
U1
NX26F011A or
NX26F041A
U0
0
A0
1
A0
0
A0
1
A0
0
A1
0
A1
1
A1
1
A1
0
A2
0
A2
0
A2
0
A2
0
A3
0
A3
0
A3
0
A3
1
....
2
SCK
3
SIO
4
0
A0
1
A0
0
A0
1
A0
0
A1
0
A1
1
A1
1
A1
0
A2
0
A2
0
A2
0
A2
1
A3
1
A3
1
A3
1
A3
NX26F011A or
NX26F041A
U8
NX26F011A or
NX26F041A
U9
NX26F011A or
NX26F041A
U10
.... 5
6
NX26F011A or
NX26F041A
U11
Figure 2. NX26F011A or NX26F041A Used in a Multi-device Configuration with up to 16-Devices on the 2-wire NSX
7
FUNCTIONAL OVERVIEW
The NexFlash NX26F011A and NX26F041A provide up to
1M-bits or 4M-bits of non-volatile memory organized as 512
or 2,048 small sectors of 264 bytes (4,288 bits) each (Figure
3). Each sector is individually addressable using basic
instruction sequences and control functions communicated
through the devices 2-wire NXS interface.
Read and Erase/Write Instruction Sequences
The NX26F011A and NX26F041A have two basic instruction sequences: Read and Erase/Write. Unlike some other
Flash technologies, the erase and write operations of the
NX26F011A and NX26F041A are performed together in
one single operation (as fast as 5 ms per sector). Thus,
pre-erase of the memory is not necessary.
Both Read and Erase/Write instructions are made up of a
series of serial bit fields that include command, sector
address, device address, and sector data. The Read
instruction sequence also allows the device to be polled for
Ready/Busy status.
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
8
Sector 0 (0000H)
2112 Bits (264 Bytes) Per Sector
Sector 1 (0001H)
9
Sector 2 (0002H)
10
Sectors 3-2045/4093
(0003-1FD/7FD)
11
Sector 510/2046 (1FE/1FE)
12
Sector 511/2047 (1FF/7FF)
Figure 3. NX26F011A and NX26F041A Array
3
NX26F011A
NX26F041A
The instruction sequence format, flow charts, and clocking
diagrams for Read and Erase/Write operations are shown in
Figures 5 and 6, Figures 7 and 8, and Figures 9 and 10,
respectively. All data within an instruction sequence is
clocked on the rising edge. All instruction sequence fields are
ordered by most significant bit first (MSB). Data is erased and
written to the NX26F041A and NX26F011A memory array a
full sector (264 bytes) at a time. If all 264 bytes of a given
sector are not fully clocked into the device, the remaining
byte locations will be overwritten with indeterminate values.
To ensure the highest level of data integrity write operations
should be verified and rewritten, if needed, (see High Data
Integrity Applications).
Reset and Idle
Upon power-up and between Read and Erase/Write instruction sequences, the device’s internal control logic will be
reset. This is accomplished by asserting the SCK pin low
(to VIL) for greater than tRESET (~5 ms to 10 ms depending on
the voltage version being used). Once reset, the device
enters standby operation and will not wake-up until the next
rising edge of SCK. After an initial rising SCK occurs, the
device becomes ready for a new instruction sequence. Full
active power consumption starts after the correct device
address is decoded during a Read or Write instruction
sequence. To idle an instruction sequence between clocks,
SCK must be kept high (at VIH) for as long as needed. Note
that power will be in the active state when SCK is held high.
Device Initialization
After power-up it is recommended that the device information
sector be read to electronically identify the device. The
device information format contains a device ID that identifies
the manufacturer, part number (memory size), and operating
range. It also contains a list of any restricted sectors
(see Sector Tag/Sync bytes). For a further description of the
NX26F011A and NX26F041A device information format, see
the Serial Flash Device Information Sector Application Note
SFAN-02.
As shown in Figure 6, the address for the device information
sector address is at 5000H for both the NX26F011A and
NX26F041A. The device information sector is a “read-only”
sector. This assures that all device specific information,
such as the restricted sector list, is maintained and never
written over inadvertently.
Ready/Busy Status
After an Erase/Write instruction sequence has been
executed, the device will become Busy while it erases and
writes the addressed sector’s memory. This period of time
will not exceed tWP (~5 to 30 ms based on the specified power
4
supply operating voltage). During this time the device can be
tested for a Ready/Busy condition via a 16-bit status value
obtained in the Read instruction sequence. The Busy status
condition (6666H) indicates that the device has not yet
completed its write operation and will not accept read or write
instructions. The Ready status condition (9999H) indicates
that the device is available for further read or write operations.
Note that a delay time of tRP (~30 µs to 100 µs depending on
the voltage version being used) is required after the first low
to high clock transition of the Ready/Busy status read.
Sector Tag/Sync Bytes
The first byte of each sector is pre-programmed during
manufacturing with a Tag/Sync value of “C9H”. Although the
first byte of each sector can be changed, it is recommended
that Tag/Sync value be maintained and incorporated as part
of the application’s sector formatting. The Tag/Sync values
serve two purposes. First, they provide a sync-detect that
can help verify if the instruction sequence was clocked into
the device properly. Secondly, they serve as a tag to identify
a fully functional (valid) sector. This is especially important
if “restricted sector” devices are used.
Restricted sector devices provide a more cost effective
alternative to NX26F011A or NX26F041A devices with 100%
valid sectors. Restricted sector devices have a limited
number of sectors (32 maximum. for the NX26F011A and
NX26F041A) that do not meet manufacturing programming
criteria over the specified operating range. When such a
sector is detected, the first byte is tagged with a pattern other
than “C9H”. In addition to individual sector tagging, all
restricted sectors for a given device are listed in the “device
information format” (see Device Initialization).
High Data Integrity Applications
Data storage applications that use Flash memory or other
non-volatile media must take into consideration the possibility of noise or other adverse system conditions that may
affect data integrity. For those applications that require higher
levels of data integrity it is a recommended practice to use
Error Correcting Code (ECC) techniques. The NexFlash
Serial Flash Development Kit provides a software routine for
a 32-bit ECC that can detect up to two bit errors and correct
one. The ECC not only minimizes problems caused by
system noise but can also extend Flash memory endurance.
For those systems without the processing power to handle
ECC algorithms, a simple “verification after write” is recommended. The NexFlash Serial Flash Development Kit
software includes a simple Write/Verify routine that will
compare data written to a given sector and rewrite the sector
if the compare is not correct.
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
NX26F011A
NX26F041A
Command
1
Address
Reserved
Status
Data
INITIAL CLOCK
To wake device from standby
(Data is "Don't Care")
2
C3-C0 SA11-0 DA3-0 SA15-12 R31-R0 S15-S0 D0 - - - D2112
3
COMMAND TYPE
1H = Read
MAIN SECTOR ADDRESS
000H-1FF for NX26F011A
000H-7FF for NX26F041A
4
DEVICE ADDRESS
A0-A3 pins = 0H-FH
5
AUXILARY SECTOR ADDRESS
0H = To address main sector address 0-FFF
5H = Device information sector
6
RESERVED
Use 00 00 00 00H
7
INPUT STATUS BYTES
9999H = Ready, 6666H = Busy
Note: Delay is required during
status byte read, see tRP in
AC Characteristics
8
INPUT SECTOR DATA BITS
0-2112 (264 Bytes)
9
Figure 5. Sector Read Instruction - Sequence and Bit Instruction
10
11
12
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PRELIMINARY NXSF009A-0599
05/05/99 ©
5
NX26F011A
NX26F041A
Command
Address
Reserved
Data
Control
INITIAL CLOCK
To wake device from standby
(Data is "Don't Care")
C3-C0 A11-SA0 DA3-0 A15-12 R31-R0 D0 - - - D2112 X15-X0
COMMAND TYPE
2H = Write
MAIN SECTOR ADDRESS
000H-1FF for NX26F011A
000H-7FF for NX26F041A
DEVICE ADDRESS
A0-A3 pins = 0H-FH
AUXILARY SECTOR ADDRESS
0H = main sector address 0-FFF
RESERVED
Use 00 00 00 00H
SECTOR DATA BITS
0-2112 (264 Bytes)
16 EXTRA CLOCKS
(Data is "Don't Care")
Figure 6. Sector Erase/Write Instruction - Sequence and Bit Format
6
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
NX26F011A
NX26F041A
Start Sector Read Routine
1
Start Sector Erase/Write Routine
Output clock (low to high) to
wake device from standby
Call Read Sector Routine to
check Ready/Busy and Tag
2
Output Command Sequence:
Device
Ready and Sector
Tag valid
-Read command C3-C0 (0001B)
-Main Sector Address A1-A0
(000-1FF-7FF)
-Device Address DA3-DA0
(per state of A3, A2, A1, A0 pins)
3
No*
Yes
Output one clock to wake
device from stand-by
-Auxilary Address A15-A12
0H for main array
5H device information sector
4
-Four reserved bytes R31-R0
(00 00 00 00H)
Output Command Sequence:
5
-Read command C3-C0 (0001B)
-Main Sector Address A1-A0
(000-1FF-7FF)
Input Ready/Busy Status S15-S0.
Note tRP delay time is
required during status read
(See AC Timing and Figure 10)
-Device Address DA3-DA0
(per state of A3, A2, A1, A0 pins)
6
-Auxilary Address A15-A12
0H for main array
Ready?
(99 99H)
No*
-Four reserved bytes R31-R0
(00 00 00 00H)
7
Yes
Input first byte of data
(Tag/Sync) from sector
Output (Rewrite )1st byte of sector
with C9H Tag/Sync bite
Valid Sector?
(C9H)
No*
Yes
8
Output remaining 264 bytes
(2112 bits) of sector data
9
Return to write routine?
Yes*
Output two bytes of zeros (00 00H)
No
Input remaining 264 bytes of
sector data (2112 bits)
*Set Flag and process
accordingly upon return
Assert CLK low for tRESET to
reset device and invoke standby
10
Assert CLK low for tRESET
to invoke Erase/Write Operation
and then standby operation
11
*Set Flag and process
accordingly upon return
Return (1)
12
Return
Figure 7. Sector Read Operation Flow Chart
Figure 8. Sector Erase/Write Operation Flow Chart
Note:
1. To ensure higher data integrity verify each sector write with a sector read. See High Data Integrity Applications on Page 4.
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
7
NX26F011A
NX26F041A
Device leaves standby mode at this edge
SCK
SIO
1
0
0
0
A11 A10 A9 A8
Read
Command
A7
A6 A5 A4 A3 A2 A1 A0 DA3 DA2 DA1 DA0 A15 A14 A13 A12
12-Bit Sector Address
Device
Address
Aux.
Address
SCK
SIO
LSB
MSB
Four Reserved Bytes (Use 00 00 00 00H)
tRP
SCK
SIO
1
0
0
1
1
0
0
1
1
0
1
0
1
0
0
1
Status Word (S15-S0): Ready: 9999H or Busy:6666H
Device Drives SIO Line
Float SIO so data direction can change from device input to output
2112 Clocks
8 Clocks
tRESET
SCK
SIO
Bytes 0 to 262
Bytes 0 to 263
Device Releases SIO Line
Figure 9. Read Instruction Sequence Clocking
8
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
NX26F011A
NX26F041A
1
Device leaves standby mode at this edge
SCK
SIO
0
0
0
1
A11 A10 A9 A8
Write
Command
A7
A6
A5
A4
A3
12-Bit Sector Address
A2
A1
A0 DA3 DA2 DA1 DA0
0
0
Device
Address
0
2
0
0H
3
SCK
SIO
MSB
4
LSB
Four reserved bytes (use 00 00 00 00H)
5
8 Clocks
8 Clocks
2080 Clocks
SCK
SIO
6
Byte 0
Byte 1
Bytes 2 to 261
7
Device enters standby mode after tWP
8 Clocks
8 Clocks
Byte 262
Byte 263
16 Extra Clocks
tRESET
tWP
8
SCK
SIO
Don't Care
9
10
Figure 10. Erase/Write Instruction Sequence Clocking
11
12
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
9
NX26F011A
NX26F041A
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Conditions
Vcc
VIN, VOUT
TSTG
TLEAD
Supply Voltage
Voltage Applied to Any Pin
Storage Temperature
Lead Temperature
Relative to Ground
Soldering, Ten Seconds
Range
Unit
0 to 7.0
–0.5 to Vcc + 0.6
–65 to +150
+300
V
V
°C
°C
Note:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not
guaranteed. Exposure beyond absolute maximum ratings (listed above) may cause permanent damage
OPERATING RANGES
Symbol
Parameter
Conditions
Min
Max
Unit
Vcc
Supply Voltage
4.5
2.7
5.5
3.6
V
V
TA
Ambient Temperature, Operating
5.0V
3.0V
3.0V
Commercial
Extended(1)
Industrial(1)
0
–15
–40
+70
+80
+85
°C
°C
°C
Note:
1. Contact NexFlash for availability of extended or industrial grade devices.
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
V IL
V IH
VOL
VOH
VOLC
VOHC
ILI
I OL
I C C (active)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage CMOS (1)
Output High Voltage CMOS (1)
Input Leakage
I/O Leakage
Active Power Supply Current (2)
–0.4
Vcc x 0.6
I O L = 2 mA, V C C = 4.5V
—
I O H = –400 µA, V C C = 4.5V
2.4
V C C = Min, I OL = 10 µA
—
V C C = Min, I O H = –10 µA
V CC – 0.3
0 < V I N < Vcc
–10
0 < V I N < Vcc, Output Disabled
–10
f C L K ≤ 8 MHz (1/t C P )
V C C = 4.5V to 5.5V
—
V C C = 2.7V to 3.3V
—
SIO = 0V or V C C ,
—
SCK = 0V
T A = 25°C, V C C = 5V or 3V
—
Frequency = 1 MHz
T A = 25°C, V C C = 5V or 3V
—
Frequency = 1 MHz
I C C S B (standby) Standby Power Supply Current
C IN
Input Capacitance (1)
COUT
Output Capacitance (1)
Min
Typ
Max
Unit
—
—
—
—
—
—
—
—
Vcc x 0.2
Vcc + 0.5
0.45
—
0.15
—
+10
+10
V
V
V
V
V
V
µA
µA
15
5
<1
30
10
10
mA
—
10
pF
—
10
pF
µA
Notes:
1. Tested on a sample basis or specified via design or characterization data.
2. The device leaves “standby” power consumption after the clock transitions from low-to-high. Full “active” power consumption
starts after the correct device address has been decoded during a sector read or write sequence.
10
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
NX26F011A
NX26F041A
AC ELECTRICAL CHARACTERISTICS
5V (16 MHz)
Min Typ Max
3V (8 MHz)
Min Typ Max
62
26
—
—
40
0
—
1.5
—
—
—
—
—
—
—
—
—
—
7
7
—
—
60
5
125
57
—
—
100
0
—
3
—
—
—
—
—
—
—
—
—
—
5
5
—
—
115
10
ns
ns
ns
ns
ns
ns
ns
µs
30
—
—
3
—
5
100
—
—
5
—
10
µs
ms
4
Notes:
1. Test points are 10% and 90% points for rise/fall times. All other timings are measured at the 50% point.
2. With 50 pF (8 MHz) or 30 pF (16 MHz) load SIO to GND.
3. The NX26F011A and NX26F041A are designed for Erase/Write endurances of 10K cycles. Endurance in the range of 100K
cycles can be obtained using ECC software methods like those provided in the SFK Serial Flash Development Kit.
5
Symbol
Description
tCP
t CL , t CH
tCR
tCF
tDS
tDH
tDV
t RESET
SCK Serial Clock Period
SCK Serial Clock High or Low Time
SCK Serial Clock Rise Time(1)
SCK Serial Clock Fall Time(1)
SIO Setup Time to SCK Rising Edge
SIO Hold Time From SCK Rising Edge
SIO Valid after SCK(2)
SCK Low Duration for
Valid Reset or Standby (See Figures 9 & 10)
Read Pre-data Delay (See Figure 9)
Erase/Write Program Time(3) (See Figure 10)
tRP
tWP
Unit
1
2
3
6
7
CLOCK AND DATA TIMING
8
9
tCP
tCH
tCR
tCF
tCL
SCK
tDV
tDV
SIO
Read
10
tDS
tDH
11
Write
12
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
11
NX26F011A
NX26F041A
PACKAGE INFORMATION
Plastic TSOP - 28-pin
Package Code: V (Type I)
1
H
E
N
D
SEATING PLANE
A
e
B
Plastic TSOP (T—Type I)
Millimeters
Inches
Symbol Min
Max
Min
Max
Ref. Std.
No. Leads
28
A
1.00
1.20
0.039 0.047
A1
0.05
0.20
0.002 0.008
B
0.15
0.25
0.006 0.010
C
0.10
0.20
0.004 0.008
D
7.90
8.10
0.311 0.319
E
11.60 11.80
0.457 0.465
H
13.30 13.50
0.524 0.531
e
0.55 BSC
0.022 BSC
L
0.50
0.70
0.020 0.028
α
0°
5°
0°
5°
12
L
A1
α
C
Notes:
1. Controlling dimension: millimeters, unless
otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E do not include mold
flash protrusions and should be measured
from the bottom of the package.
4. Formed leads shall be planar with respect
to one another within 0.004 inches at the
seating plane.
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
NX26F011A
NX26F041A
ORDERING INFORMATION
Size
Order Part No.
Package/Description (2)
1M-bit
NX26F011A-3V-R (1)
NXS, 28-pin, TSOP (Type I)
≤32 RS, 3V Low Voltage
1M-bit
NX26F011A-5V-R (1)
NXS, 28-pin, TSOP (Type I)
≤32 RS, 5V Standard Voltage
4M-bit
NX26F041A-3V-R
NXS, 28-pin, TSOP (Type I)
≤32 RS, 3V Low Voltage
4M-bit
NX26F041A-5V-R (1)
NXS, 28-pin, TSOP (Type I)
≤32 RS, 5V Standard Voltage
1
2
3
Notes:
1. Add E (Extended) or I (Industrial) after package designator (V) for alternative temperature
grades.
2. See 26Mxxx data sheet for Serial Flash Module package.
4
5
6
PRELIMINARY DESIGNATION
LIFE SUPPORT POLICY
The “Preliminary” designation on an NexFlash data sheet
indicates that the product is not fully characterized. The
specifications are subject to change and are not guaranteed. NexFlash or an authorized sales representative should
be consulted for current information before using this
product.
NexFlash does not recommend the use of any of its
products in life support applications where the failure or
malfunction of the product can reasonably be expected to
cause failure in the life support system or to significantly
affect its safety or effectiveness. Products are not authorized for use in such applications unless NexFlash receives
written assurances, to its satisfaction, that:
7
(a) the risk of injury or damage has been minimized;
9
8
IMPORTANT NOTICE
NexFlash reserves the right to make changes to the
products contained in this publication in order to improve
design, performance or reliability. NexFlash assumes no
responsibility for the use of any circuits described herein,
conveys no license under any patent or other right, and
makes no representation that the circuits are free of patent
infringement. Charts and schedules contained herein
reflect representative operating parameters, and may vary
depending upon a user’s specific application. While the
information in this publication has been carefully checked,
NexFlash shall not be liable for any damages arising as a
result of any error or omission.
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
(b) the user assumes all such risks; and
(c) potential liability of NexFlash is adequately protected
under the circumstances.
Trademarks:
NexFlashTM is a trademark of NexFlash Technologies, Inc.
All other marks are the property of their respective owners.
13
10
11
12
NX26F011A
NX26F041A
14
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
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