Diodes DMG4496SSS-13 N-channel enhancement mode mosfet Datasheet

DMG4496SSS
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
•
•
•
•
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SO-8
S
D
S
D
S
D
G
D
TOP VIEW
Maximum Ratings
TOP VIEW
Internal Schematic
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Unit
V
V
IDM
IAR
EAR
Value
30
±25
10
6
60
8
3.2
Symbol
PD
RθJA
TJ, TSTG
Value
1.42
88.49
-55 to +150
Unit
W
°C/W
°C
TA = 25°C
TA = 85°C
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH
ID
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on 1 in.2 FR-4 board with 2oz. Copper, in a still air environment @ TA = 25°C. The value in any given application depends on the
user's specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
DMG4496SSS
Document number: DS32048 Rev. 3 - 2
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April 2010
© Diodes Incorporated
DMG4496SSS
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
-
-
1
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±25V, VDS = 0V
VGS(th)
0.8
1.2
2.0
V
RDS (ON)
-
16
22
21.5
29
mΩ
|Yfs|
VSD
-
11.7
0.70
1
S
V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 7.5A
VDS = 5V, ID = 10A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
493.5
94.5
50.4
2.86
4.7
10.2
1.4
1.7
4.76
3.64
19.5
4.9
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS =15V, VGS = 0V,
f = 1.0MHz
VDS =0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 4.5V, ID =10A
VDS = 15V, VGS = 10V, ID =10A
VGS = 10V, VDs = 15V,
RG = 6Ω, RL = 15Ω,
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
20
30
VGS = 10V
VDS = 5V
25
VGS = 4.5V
20
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics
VGS = 4.0V
VGS = 3.5V
15
10
5
15
10
VGS = 150°C
VGS = 125°C
VGS = 85°C
5
VGS = 3.0V
VGS = 25°C
VGS = 2.5V
VGS = -55°C
0
0
0
0.5
1
1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DMG4496SSS
Document number: DS32048 Rev. 3 - 2
5
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0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
4
April 2010
© Diodes Incorporated
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.04
VGS = 3.5V
0.03
VGS = 4.5V
0.02
VGS = 10V
0.01
0
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = 4.5V
ID = 5A
1.5
VGS = 10V
ID = 10A
1.3
1.1
0.9
0.7
0.5
-50
0.04
VGS = 10V
0.03
TA = 150°C
TA = 125°C
TA = 85°C
0.02
TA = 25°C
TA = -55°C
0.01
0
30
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.05
1.7
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
0.06
0.05
0.04
VGS = 4.5V
ID = 5A
0.03
0.02
VGS = 10V
ID = 10A
0.01
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
0
-50
Fig. 5 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
20
2.0
18
1.8
16
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
DMG4496SSS
1.6
ID = 1mA
1.4
1.2
ID = 250µA
1.0
14
12
TA = 25°C
10
8
6
4
0.8
2
0.6
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMG4496SSS
Document number: DS32048 Rev. 3 - 2
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0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
April 2010
© Diodes Incorporated
DMG4496SSS
10,000
1,000
IDSS, LEAKAGE CURRENT (nA)
f = 1MHz
NEW PRODUCT
C, CAPACITANCE (pF)
Ciss
Coss
100
Crss
10
T A = 150°C
1,000
T A = 125°C
100
T A = 85°C
10
TA = 25°C
1
0
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
20
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
30
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 90°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
Ordering Information
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
100
1,000
(Note 8)
Part Number
DMG4496SSS-13
Notes:
10
Case
SO-8
Packaging
2500 / Tape & Reel
8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Top View
8
5
Logo
G4496SS
Part no.
YY WW
Week: 01 ~ 53
Year: “09” = 2009
1
DMG4496SSS
Document number: DS32048 Rev. 3 - 2
4
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April 2010
© Diodes Incorporated
DMG4496SSS
0.254
NEW PRODUCT
Package Outline Dimensions
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Suggested Pad Layout
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMG4496SSS
Document number: DS32048 Rev. 3 - 2
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April 2010
© Diodes Incorporated
DMG4496SSS
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
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labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
DMG4496SSS
Document number: DS32048 Rev. 3 - 2
6 of 6
www.diodes.com
April 2010
© Diodes Incorporated
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