A1366 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC With Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output Description Features and Benefits • • • • • • • Factory programmed sensitivity and quiescent output voltage with high resolution Proprietary segmented linear interpolated temperature compensation (TC) technology provides a typical accuracy of 1% across the full operating temperature range Extremely low noise and high resolution achieved via proprietary Hall element and low noise amplifier circuits 120 kHz nominal bandwidth achieved via proprietary packaging and chopper stabilization techniques Patented circuits suppress IC output spiking during fast current step inputs Open circuit detection on ground pin (broken wire) Undervoltage lockout for VCC below specification Continued on the next page… Package: 4-pin SIP (suffix KT) The Allegro™ A1366 factory-programmable linear Halleffect current sensor IC has been designed to achieve high accuracy and resolution. The goal is achieved through new proprietary linearly interpolated temperature compensation technology that is programmed at the Allegro factory, which provides sensitivity and offset that are virtually flat across the full operating temperature range. The flat performance over temperature makes this IC ideally suited for current sensing applications. Temperature compensation is done in the digital domain with integrated EEPROM technology without sacrificing the analog signal path bandwidth, making this device ideal for HEV inverter, DC-to-DC converter, and electric power steering (EPS) applications. This ratiometric Hall-effect sensor IC provides a voltage output that is proportional to the applied magnetic field. Sensitivity and quiescent (zero field) output voltage are factory programmed with high resolution which provides for an accuracy of less than ±1%, typical, over temperature. The sensor IC incorporates a highly sensitive Hall element with a BiCMOS interface integrated circuit that employs a low noise, small-signal high-gain amplifier, as well as a low-impedance output stage, and a proprietary, high bandwidth dynamic offset 1 mm case thickness Not to scale Continued on the next page… Functional Block Diagram V+ VCC To all subcircuits Programming Control Temperature Sensor C BYPASS Dynamic Offset Cancellation Sensitivity Control GND A1366-DS EEPROM and Control Logic Signal Recovery Offset Control VOUT CL A1366 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output Features and Benefits (continued) Description (continued) • • • • • • cancellation technique. These advances in Hall-effect technology work together to provide an industry leading sensing resolution at the full 120 kHz bandwidth. The device has built in broken ground wire detection for high reliability in automotive applications. Ratiometric sensitivity and quiescent voltage output Precise recoverability after temperature cycling Wide ambient temperature range: –40°C to 150°C Immune to mechanical stress Extremely thin package: 1 mm case thickness AEC Q-100 automotive qualified Selection Guide Part Number Packing* A1366LKTTN-1-T 4000 pieces per 13-in. reel A1366LKTTN-2-T 4000 pieces per 13-in. reel A1366LKTTN-5-T 4000 pieces per 13-in. reel A1366LKTTN-10-T 4000 pieces per 13-in. reel *Contact Allegro for additional packing options Device parameters are specified across an extended ambient temperature range: –40°C to 150°C. The A1366 sensor IC is provided in an extremely thin case (1 mm thick), 4-pin SIP (single in-line package, suffix KT) that is lead (Pb) free, with 100% matte tin lead frame plating. Sensitivity (Typ.) (mV/G) 1 2.5 5 10 Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 2 A1366 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output Absolute Maximum Ratings Rating Unit Forward Supply Voltage Characteristic Symbol VCC Notes 6 V Reverse Supply Voltage VRCC –0.1 V Forward Output Voltage VOUT 25 V Reverse Output Voltage VROUT Output Source Current IOUT(source) VOUT to GND IOUT(sink) VCC to VOUT Output Sink Current Operating Ambient Temperature Maximum Junction Temperature Pin-out Diagram 1 V 10 mA 10 mA –40 to 150 ºC Tstg –65 to 165 ºC TJ(max) 165 ºC TA Storage Temperature –0.1 L temperature range Terminal List Table Number Name 1 VCC 2 VOUT 3 NC 4 GND Function Input power supply, use bypass capacitor to connect to ground Output signal No connection; connect to GND for optimal ESD performance Ground 2 3 4 (Ejector pin mark on opposite side) Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 3 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output A1366 Thermal Characteristics may require derating at maximum conditions, see application information Characteristic Symbol RθJA Package Thermal Resistance Test Conditions* On 1-layer PCB with exposed copper limited to solder pads Value Unit 174 ºC/W *Additional thermal information available on the Allegro website Power Dissipation versus Ambient Temperature 900 800 600 (R 500 θJ A = 17 4 ºC 400 /W ) Power Dissipation, PD (mW) 700 300 200 100 0 20 40 60 80 100 120 140 Temperature, TA (°C) 160 180 Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 4 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output A1366 COMMON OPERATING CHARACTERISTICS Valid through the full operating temperature range, TA, CBYPASS = 0.1 µF, VCC = 5 V; unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Unit1 4.5 5.0 5.5 V Electrical Characteristics Supply Voltage VCC Supply Current ICC No load on VOUT – 10 15 mA Power-On Time2 tPO TA = 25°C, CBYPASS = Open, CL = 1 nF, Sens = 2.5 mV/G, constant magnetic field of 320 G – 78 – µs Temperature Compensation Power-On Time2 tTC TA = 150°C, CBYPASS = Open, CL= 1 nF, Sens = 2.5 mV/G, constant magnetic field of 320 G – 30 – µs VUVLOH TA = 25°C, VCC rising and device function enabled – 4 – V VUVLOL TA = 25°C, VCC falling and device function disabled – 3.5 – V tUVLOE TA = 25°C, CBYPASS = Open, CL = 1 nF, Sens = 2.5 mV/G, VCC Fall Time (5 V to 3 V) = 1.5 µs – 64 – µs tUVLOD TA = 25°C, CBYPASS = Open, CL = 1 nF, Sens = 2.5 mV/G, VCC Recover Time (3 V to 5 V) = 1.5 µs – 14 – µs VPORH TA = 25°C, VCC rising – 2.6 – V VPORL TA = 25°C, VCC falling – 2.3 – V tPORR TA = 25°C, VCC rising µs Undervoltage Lockout (UVLO) Threshold2 UVLO Enable/Disable Delay Time2 Power-On Reset Voltage2 Power-On Reset Release Time2 – 64 – 6.5 7.5 – V Small signal –3 dB, CL = 1 nF, TA = 25°C – 120 – kHz fC TA = 25°C – 500 – kHz Propagation Delay Time2 tPD TA = 25°C, magnetic field step of 320 G, CL = 1 nF, Sens = 2.5 mV/G – 2.2 – µs Rise Time2 tR TA = 25°C, magnetic field step of 320 G, CL = 1 nF, Sens = 2.5 mV/G – 3.6 – µs tRESPONSE TA = 25°C, magnetic field step of 320 G, CL = 1 nF, Sens = 2.5 mV/G – 3.7 – µs 4.7 – – V – – 400 mV Supply Zener Clamp Voltage Internal Bandwidth Chopping Frequency3 Vz BWi TA = 25°C, ICC = 30 mA Output Characteristics Response Time2 Output Saturation Voltage2 VSAT(HIGH) TA = 25°C, RL(PULLDWN) = 10 kΩ to GND VSAT(LOW) TA = 25°C, RL(PULLUP) = 10 kΩ to VCC Continued on the next page… Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 5 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output A1366 COMMON OPERATING CHARACTERISTICS (continued) Valid through the full operating temperature range, TA; CBYPASS = 0.1 µF, VCC = 5 V; unless otherwise specified Characteristics Broken Wire Voltage2 Symbol Test Conditions Min. Typ. Max. Unit1 VBRK(HIGH) TA = 25°C, RL(PULLUP) = 10 kΩ to VCC – VCC – V VBRK(LOW) TA = 25°C, RL(PULLDWN) = 10 kΩ to GND – 100 – mV – 1.1 – mGRMS/√¯(Hz) Output Characteristics (continued) Noise BN DC Output Resistance Output Load Resistance Output Load Capacitance4 Output Slew Rate5 TA = 25°C, CL = 1 nF, Bandwidth = BWi – 9 – Ω RL(PULLUP) VOUT to VCC ROUT 4.7 – – kΩ RL(PULLDWN) VOUT to GND 4.7 – – kΩ CL VOUT to GND – 1 10 nF SR Sens = 2.5 mV/G, CL = 1 nF – 230 – V/ms –1 < ±0.25 1 % Error Components Linearity Sensitivity Error2,6 Symmetry Sensitivity Error2 Ratiometry Quiescent Voltage Output Error2,7 Ratiometry Sensitivity Error2,7 LinERR SymERR –1 < ±0.25 1 % RatERRVOUT(Q) Through supply voltage range (relative to VCC = 5 V) –1 0 1 % RatERRSens Through supply voltage range (relative to VCC = 5 V) – ±1 – % 11 G (gauss) = 0.1 mT (millitesla). Characteristic Definitions section. 3f varies up to approximately ± 20% over the full operating ambient temperature range, T , and process. C A 4Output stability is maintained for capacitive loads as large as 10 nF. 5High-to-low transition of output voltage is a function of external load components and device sensitivity. 6Linearity applies to output voltage ranges of ±2 V from the quiescent output for bidirectional devices. 7Percent change from actual value at V CC = 5 V, for a given temperature, through the supply voltage operating range. 2See Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 6 A1366 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output A1366LKT-1-T PERFORMANCE CHARACTERISTICS1: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V, unless otherwise specified Characteristic Sensitivity3 Sensitivity Drift through Temperature Range Symbol SensTA ΔSensTC Test Conditions Min. Measured using 600 G, TA = 25°C Typ. Max. Unit2 0.975 1 1.025 mV/G TA = 25°C to 150°C -2.5 0 2.5 % TA = -40°C to 25°C -2.5 0 2.5 % – ±1.25 – % Sensitivity Drift Due to Package Hysteresis ∆SensPKG TA = 25°C, after temperature cycling, 25°C to 150°C and back to 25°C Sensitivity Drift Over Lifetime4 ∆SensLIFE TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification – ±1 – % TA = 25°C, CL = 1 nF – 3.15 – mVP-P TA = 25°C, CL = 1 nF – 0.5 – mVRMS Noise Quiescent Output Voltage5 VN testing VOUT(Q)TA TA = 25°C 2.490 2.500 2.510 V VOUT(Q)HT TA = 25°C to 150°C 2.490 2.500 2.510 V VOUT(Q)LT TA = –40°C to 25°C 2.490 2.500 2.510 V – ±2 – mV Quiescent Output Voltage Drift T = –40°C to 150°C, shift after AEC Q100 grade 0 qualification ∆VOUT(Q)LIFE A Over Lifetime4 testing 1See Characteristic Performance Data section for parameter distributions across temperature range. G (gauss) = 0.1 mT (millitesla). 3This parameter may drift a maximum of ΔSens LIFE over lifetime. 4Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, cannot be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information. 5This parameter may drift a maximum of ΔV OUT(Q)LIFE over lifetime. 21 Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 7 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output A1366 A1366LKT-2-T PERFORMANCE CHARACTERISTICS1: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V, unless otherwise specified Characteristic Sensitivity3 Symbol SensTA Sensitivity Drift through Temperature Range ΔSensTC Test Conditions Measured using 400 G, TA = 25°C Min. Typ. Max. Unit2 2.437 2.5 2.563 mV/G TA = 25°C to 150°C -2.5 0 2.5 % TA = -40°C to 25°C -2.5 0 2.5 % – ±1.25 – % Sensitivity Drift Due to Package Hysteresis ∆SensPKG TA = 25°C, after temperature cycling, 25°C to 150°C and back to 25°C Sensitivity Drift Over Lifetime4 ∆SensLIFE TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification – ±1 – % TA = 25°C, CL = 1 nF – 7.875 – mVP-P TA = 25°C, CL = 1 nF – 1.25 – mVRMS Noise Quiescent Output VN Voltage5 testing VOUT(Q)TA TA = 25°C 2.490 2.500 2.510 V VOUT(Q)HT TA = 25°C to 150°C 2.490 2.500 2.510 V VOUT(Q)LT TA = –40°C to 25°C TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification 2.490 2.500 2.510 V – ±2 – mV Quiescent Output Voltage Drift ∆VOUT(Q)LIFE Over Lifetime4 testing 1See Characteristic Performance Data section for parameter distributions across temperature range. G (gauss) = 0.1 mT (millitesla). 3This parameter may drift a maximum of ΔSens LIFE over lifetime. 4Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, cannot be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information. 5This parameter may drift a maximum of ΔV OUT(Q)LIFE over lifetime. 21 Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 8 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output A1366 A1366LKT-5-T PERFORMANCE CHARACTERISTICS1: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V, unless otherwise specified Characteristic Sensitivity3 Symbol SensTA Sensitivity Drift through Temperature Range ΔSensTC Test Conditions Min. Measured using 200 G, TA = 25°C Typ. Max. Unit2 4.875 5 5.125 mV/G TA = 25°C to 150°C -2.5 0 2.5 % TA = -40°C to 25°C -2.5 0 2.5 % – ±1.25 – % Sensitivity Drift Due to Package Hysteresis ∆SensPKG TA = 25°C, after temperature cycling, 25°C to 150°C and back to 25°C Sensitivity Drift Over Lifetime4 ∆SensLIFE TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification – ±1 – % TA = 25°C, CL = 1 nF – 15.75 – mVP-P TA = 25°C, CL = 1 nF – 2.5 – mVRMS Noise Quiescent Output VN Voltage5 testing VOUT(Q)TA TA = 25°C 2.490 2.500 2.510 V VOUT(Q)HT TA = 25°C to 150°C 2.490 2.500 2.510 V VOUT(Q)LT TA = –40°C to 25°C TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification 2.490 2.500 2.510 V – ±2 – mV Quiescent Output Voltage Drift ∆VOUT(Q)LIFE Over Lifetime4 testing 1See Characteristic Performance Data section for parameter distributions across temperature range. G (gauss) = 0.1 mT (millitesla). 3This parameter may drift a maximum of ΔSens LIFE over lifetime. 4Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, cannot be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information. 5This parameter may drift a maximum of ΔV OUT(Q)LIFE over lifetime. 21 Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 9 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output A1366 A1366LKT-10-T PERFORMANCE CHARACTERISTICS1: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V, unless otherwise specified Characteristic Sensitivity3 Symbol SensTA Sensitivity Drift through Temperature Range ΔSensTC Test Conditions Min. Typ. Max. Unit2 Measured using 100 G, TA = 25°C 9.75 10 10.25 mV/G TA = 25°C to 150°C -2.5 0 2.5 % TA = -40°C to 25°C -2.5 0 2.5 % – ±1.25 – % Sensitivity Drift Due to Package Hysteresis ∆SensPKG TA = 25°C, after temperature cycling, 25°C to 150°C and back to 25°C Sensitivity Drift Over Lifetime4 ∆SensLIFE TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification – ±1 – % TA = 25°C, CL = 1 nF – 31.5 – mVP-P TA = 25°C, CL = 1 nF – 5 – mVRMS Noise Quiescent Output VN Voltage5 testing VOUT(Q)TA TA = 25°C 2.485 2.500 2.515 V VOUT(Q)HT TA = 25°C to 150°C 2.485 2.500 2.515 V VOUT(Q)LT TA = –40°C to 25°C TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification 2.485 2.500 2.515 V – ±2 – mV Quiescent Output Voltage Drift ∆VOUT(Q)LIFE Over Lifetime4 testing 1See Characteristic Performance Data section for parameter distributions across temperature range. G (gauss) = 0.1 mT (millitesla). 3This parameter may drift a maximum of ΔSens LIFE over lifetime. 4Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, cannot be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information. 5This parameter may drift a maximum of ΔV OUT(Q)LIFE over lifetime. 21 Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 10 A1366 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output Characteristic Performance Data Response Time (tRESPONSE) 400 G excitation signal with 10%-90% rise time = 1 µs Sensitivity = 2 mV/G, CBYPASS=0.1 µF, CL=1 nF Input = 400 G Excitation Signal 80% of Input Output (VOUT, mV) tRESPONSE = 3.7 µs 80% of Output Propagation Delay (tPD) 400 G excitation signal with 10%-90% rise time = 1 µs Sensitivity = 2 mV/G, CBYPASS=0.1 µF, CL=1 nF Input = 400 G Excitation Signal Output (VOUT, mV) tPD = 2.2 µs 20% of Input 20% of Output Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 11 A1366 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output Rise Time (tR) 400 G excitation signal with 10%-90% rise time = 1 µs Sensitivity = 2 mV/G, CBYPASS=0.1 µF, CL=1 nF Input = 400 G Excitation Signal Output (VOUT, mV) 90% of Output tR = 3.6 µs 10% of Output Power-On Time(t PO ) 400 G constant excitation signal, with VCC 10%- 90% rise time = 1.5 µs Sensitivity = 2 mV/G, CBYPASS= Open, CL=1 nF Supply (VCC, V) VCC(min) tPO = 78 µs Output (VOUT, V) 90% of Output Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 12 A1366 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output UVLO Enable Time (t UVLOE ) VCC 5 V-3 V fall time = 1.5 µs Sensitivity = 2 mV/G, CBYPASS= Open, CL=1 nF VUVLOL Supply (VCC, V) tUVLOE = 63.6 µs Output (VOUT, V) Output = 0 V UVLO Disable Time (t UVLOD ) VCC 3 V-5 V recovery time = 1.5 µs Sensitivity = 2 mV/G, CBYPASS= Open, CL=1 nF Supply (VCC, V) VCC(min) tUVLOD = 12 µs Output (VOUT, V) 90% of Output Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 13 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output A1366 Characteristic Definitions Power-On Time (tPO) When the supply is ramped to its operat- ing voltage, the device requires a finite time to power its internal components before responding to an input magnetic field. (%) Power-On Time, tPO , is defined as: the time it takes for the output voltage to settle within ±10% of its steady state value under an applied magnetic field, after the power supply has reached its minimum specified operating voltage, VCC(min), as shown in figure 1. 90 Temperature Compensation Power-On Time (tTC ) After PowerOn Time, tPO , elapses, tTC is also required before a valid temperature compensated output. 20 10 0 Propagation Delay (tPD) The time interval between a) when the applied magnetic field reaches 20% of it’s final value, and b) when the output reaches 20% of its final value (see figure 2). Applied Magnetic Field Transducer Output Rise Time, tR Propagation Delay, tPD t Figure 2: Propagation Delay and Rise Time definitions Rise Time (tR) The time interval between a) when the sensor IC reaches 10% of its final value, and b) when it reaches 90% of its final value (see Figure 2). Response Time (tRESPONSE) The time interval between a) when the applied magnetic field reaches 80% of its final value, and b) when the sensor reaches 80% of its output corresponding to the applied magnetic field (see Figure 3). (%) 80 Quiescent Voltage Output (VOUT(Q)) In the quiescent state (no significant magnetic field: B = 0 G), the output, VOUT(Q) , has a Applied Magnetic Field Transducer Output Response Time, tRESPONSE V VCC VCC(typ.) 0 VOUT 90% VOUT t Figure 3: Response Time definition VCC(min.) t1 t2 tPO t1= time at which power supply reaches minimum specified operating voltage t2= time at which output voltage settles within ±10% of its steady state value under an applied magnetic field 0 +t Figure 1: Power-on Time definition Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 14 A1366 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output constant ratio to the supply voltage, VCC , throughout the entire operating ranges of VCC and ambient temperature, TA . Sensitivity (Sens) The presence of a south polarity magnetic field, perpendicular to the branded surface of the package face, increases the output voltage from its quiescent value toward the supply voltage rail. The amount of the output voltage increase is proportional to the magnitude of the magnetic field applied. Conversely, the application of a north polarity field decreases the output voltage from its quiescent value. This proportionality is specified as the magnetic sensitivity, Sens (mv/G), of the device, and it is defined as: Sens = VOUT(BPOS) – VOUT(BNEG) BPOS – BNEG , (1) where BPOS and BNEG are two magnetic fields with opposite polarities. Sensitivity Drift Through Temperature Range (ΔSensTC ) Second order sensitivity temperature coefficient effects cause the magnetic sensitivity, Sens, to drift from its expected value over the operating ambient temperature range, TA . The Sensitivity Drift Through Temperature Range, ∆SensTC , is defined as: SensTA – SensEXPECTED(TA) ∆SensTC = × 100% . (2) SensEXPECTED(TA) Sensitivity Drift Due to Package Hysteresis (ΔSensPKG ) Pack- age stress and relaxation can cause the device sensitivity at TA = 25°C to change during and after temperature cycling. The sensitivity drift due to package hysteresis, ∆SensPKG , is defined as: Sens(25°C)2 – Sens(25°C)1 ∆SensPKG = (3) × 100% , Sens(25°C)1 where Sens(25°C)1 is the programmed value of sensitivity at TA = 25°C, and Sens(25°C)2 is the value of sensitivity at TA = 25°C, after temperature cycling TA up to 150°C and back to 25°C. Linearity Sensitivity Error (LinERR ) The A1366 is designed to provide a linear output in response to a ramping applied magnetic field. Consider two magnetic fields, B1 and B2. Ideally, the sensitivity of a device is the same for both fields, for a given supply voltage and temperature. Linearity error is present when there is a difference between the sensitivities measured at B1 and B2. Linearity Error is calculated separately for the positive (LinERRPOS ) and negative (LinERRNEG ) applied magnetic fields. Linearity Error (%) is measured and defined as: SensBPOS2 × 100% LinERRPOS = 1– SensBPOS1 , SensBNEG2 × 100% LinERRNEG = 1– SensBNEG1 , where: SensBx = |VOUT(Bx) – VOUT(Q)| Bx (4) , (5) and BPOSx and BNEGx are positive and negative magnetic fields, with respect to the quiescent voltage output such that |BPOS2| = 2 × |BPOS1| and |BNEG2| = 2 × |BNEG1|. Then: LinERR = max( LinERRPOS , LinERRNEG ) . (6) Symmetry Sensitivity Error (SymERR ) The magnetic sensitivity of an A1366 device is constant for any two applied magnetic fields of equal magnitude and opposite polarities. Symmetry Error, SymERR (%), is measured and defined as: SensBPOS (7) × 100% , SymERR = 1– SensBNEG where SensBx is as defined in equation 7, and BPOSx and BNEGx are positive and negative magnetic fields such that |BPOSx| = |BNEGx|. Ratiometry Error (RatERR ) The A1366 device features ratiometric output. This means that the Quiescent Voltage Output, VOUT(Q) , and magnetic sensitivity, Sens, are proportional to the Supply Voltage, VCC. In other words, when the supply voltage increases or decreases by a certain percentage, each characteristic also increases or decreases by the same percentage. Error is the difference between the measured change in the supply voltage relative to 5 V, and the measured change in each characteristic. The ratiometric error in Quiescent Voltage Output, RatERRVOUT(Q) (%), for a given supply voltage, VCC , is defined as: VOUT(Q)(VCC) / VOUT(Q)(5V) × 100% . (8) RatERRVOUT(Q) = 1– VCC / 5 V The ratiometric error in magnetic sensitivity, RatERRSens (%), for a given Supply Voltage, VCC , is defined as: Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 15 A1366 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output Sens(VCC) / Sens(5V) × 100% . RatERRSens = 1– VCC / 5 V (9) Power-On Reset Voltage (VPOR ) On power-up, to initialize to a known state and avoid current spikes, the A1366 is held in a Reset state. The Reset signal is disabled when VCC reaches VUVLOH and time tPORR has elapsed, allowing the output voltage to go from a high impedance state into normal operation. During power-down, the Reset signal is enabled when VCC reaches VPORL , causing the output voltage to go into a high impedance state. (Note that detailed description of POR and UVLO operation can be found in the Functional Description section). Power-On Reset Release Time (tPORR) When VCC rises to VPORH , the Power-On Reset Counter starts. The A1366 output voltage will transition from a high impedance state to normal operation only when the Power-On Reset Counter has reached tPORR and VCC has exceeded VUVLOH . Undervoltage Lockout Threshold (VUVLO ) If VCC drops below VUVLOL output voltage will be locked to GND. If VCC starts rising, the A1366 will come out of the Lock state when VCC reaches VUVLOH . UVLO Enable/Disable Delay Time (tUVLO ) When a falling VCC reaches VUVLOL , time tUVLOE is required to engage Undervoltage Lockout state. When VCC rises above VUVLOH , time tUVLOD is required to disable UVLO and have a valid output voltage. Broken Wire Voltage (VBRK ) If the GND pin is disconnected (broken wire event), the output voltage will go to VBRK(HIGH) (if a load resistor is connected to VCC) or to VBRK(LOW) (if a load resistor is connected to GND). Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 16 A1366 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output Functional Description Power-On Reset (POR) and Undervoltage Lock-Out (UVLO) Operation The descriptions in this section assume: temperature = 25°C, no output load (RL, CL ) , and no significant magnetic field is present. • Power-Up At power-up, as VCC ramps up, the output is in a high impedance state. When VCC crosses VPORH (location [1] in Figure 4 and [1'] in Figure 5), the POR Release counter starts counting for tPORR= 64 µs. At this point, if VCC exceeds VUVLOH = 4 V [2'], the output will go to VCC / 2 after tUVLOD = 14 µs [3']. If VCC does not exceed VUVLOH = 4 V [2], the output will stay in the high impedance state until VCC reaches VUVLOH = 4 V [3] and then will go to VCC / 2 after tUVLOD = 14 µs [4]. • VCC drops below VCC(min)= 4.5 V If VCC drops below VUVLOL [4', 5], the UVLO Enable Counter starts counting. If VCC is still below VUVLOL when counter reaches tUVLOE = 64 µs, the UVLO function will be enabled and the ouput will be pulled near GND [6]. If VCC exceeds VUVLOL before the UVLO Enable Counter reaches 64 µs [5'] , the output will continue to be VCC / 2. • Coming out of UVLO While UVLO is enabled [6] , if VCC exceeds VUVLOH [7] , UVLO will be disabled after tUVLOD =14 µs, and the output will be VCC / 2 [8]. • Power-Down As VCC ramps down below VUVLOL [6’, 9], the UVLO Enable Counter will start counting. If VCC is higher than VPORL = 2.3 V when the counter reaches tUVLOE = 64 µs, the UVLO function will be enabled and the ouput will be pulled near GND [10]. The output will enter a high impedance state as VCC goes below VPORL [11]. If VCC falls below VPORL before the UVLO Enable Couner reaches 64 µs, the output will transition directly into a high impedance state [7']. Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 17 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output A1366 VCC 1 2 3 5.0 VUVLOH 4.0 VUVLOL 3.5 VPORH 2.6 VPORL 2.3 5 4 6 7 9 8 tUVLOE = 64 µs tUVLOE = 64 µs GND VOUT 10 11 Time Slope = VCC / 2 2.5 tPORR = 64 µs GND tUVLOD = 14 µs tUVLOD = 14 µs High Impedance High Impedance Time Figure 4: POR and UVLO Operation: Slow Rise Time case VCC 5.0 VUVLOH 4.0 VUVLOL 3.5 VPORH 2.6 VPORL 2.3 1’ 2’ 3’ 4’ 5’ 6’ 7’ < 64 µs GND VOUT 2.5 Time tPORR = 64 µs Slope = VCC / 2 < 64 µs Slope = VCC / 2 tUVLOD = 14 µs GND High Impedance High Impedance Time Figure 5: POR and UVLO Operation: Fast Rise Time case Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 18 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output A1366 Detecting Broken Ground Wire If the GND pin is disconnected, node A becoming open (Figure 6), the VOUT pin will go to a high impedance state. Output voltage will go to VBRK(HIGH) if a load resistor RL(PULLUP) is connected to VCC or to VBRK(LOW) if a load resistor RL(PULLDWN) is connected to GND. The device will not respond to any applied magnetic field. If the ground wire is reconnected, A1366 will resume normal operation. VCC VCC VCC RL(PULLUP) VCC VCC VOUT A1366 VOUT A1366 RL(PULLDWN) GND GND A A Connecting VOUT to RL(PULLUP) Connecting VOUT to RL(PULLDWN) Figure 6: Connections for Detecting Broken Ground Wire Typical Application Drawing V+ VOUT VCC A1366 R L(PULLDWN) C BYPASS GND C L(typ) Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 19 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output A1366 Chopper Stabilization Technique When using Hall-effect technology, a limiting factor for total accuracy is the small signal voltage developed across the Hall element. This voltage is disproportionally small relative to the offset that can be produced at the output of the Hall sensor. This makes it difficult to process the signal while maintaining an accurate, reliable output over the specified operating temperature and voltage ranges. Chopper stabilization is a unique approach used to minimize Hall offset on the chip. The Allegro technique removes key sources of the output drift induced by thermal and mechanical stresses. This offset reduction technique is based on a signal modulation-demodulation process. The undesired offset signal is separated from the magnetic fieldinduced signal in the frequency domain, through modulation. The subsequent demodulation acts as a modulation process for the offset, causing the magnetic field-induced signal to recover its original spectrum at base band, while the DC offset becomes a high-frequency signal. The magnetic-sourced signal then can pass through a low-pass filter, while the modulated DC offset is suppressed. This high-frequency operation allows a greater sampling rate, which results in higher accuracy and faster signal-processing capability. This approach desensitizes the chip to the effects of thermal and mechanical stresses, and produces devices that have extremely stable quiescent Hall output voltages and precise recoverability after temperature cycling. This technique is made possible through the use of a BiCMOS process, which allows the use of low-offset, low-noise amplifiers in combination with highdensity logic integration and a proprietary, dynamic notch filter. The new Allegro filtering techniques are far more effective at suppressing chopper induced signal noise compared to the previous generation of Allegro chopper stabilized devices. Concept of Chopper Stabilization Regulator Clock/Logic Hall Element Amp Anti-Aliasing Tuned LP Filter Filter Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 20 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output A1366 Package KT, 4-Pin SIP +0.08 5.21 –0.05 B 10° E F 2.60 +0.08 1.00 –0.05 1.00 F Mold Ejector Pin Indent +0.08 3.43 –0.05 F A 0.89 MAX NNNN Branded Face YYWW 0.54 REF 1 C Standard Branding Reference View N = Device part number Y = Last two digits of year of manufacture W = Week of manufacture 12.14±0.05 +0.08 0.41 –0.05 For Reference Only; not for tooling use (reference DWG-9202) Dimensions in millimeters Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown +0.08 0.20 –0.05 0.89 MAX 1 2 3 0.54 REF 4 +0.08 1.50 –0.05 Dambar removal protrusion (16X) B Gate and tie bar burr area C Branding scale and appearance at supplier discretion D Thermoplastic Molded Lead Bar for alignment during shipment D 1.27 NOM A E Active Area Depth 0.37 mm REF F Hall element, not to scale +0.08 1.00 –0.05 +0.08 5.21 –0.05 Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 21 A1366 Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC with Advanced Temperature Compensation And High Bandwidth (120 kHz) Analog Output Revision History Revision Current Revision Date – May 1, 2014 Description of Revision Initial Release Copyright ©2014, Allegro MicroSystems, LLC Allegro MicroSystems, LLC reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current. Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of Allegro’s product can reasonably be expected to cause bodily harm. The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, LLC assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 22