Features • • • • • • • • • Frequency Range 2.4 GHz to 2.5 GHz Supply Voltage 2.7V to 3.6V 32 dB Power Gain 23 dBm Linear Output Power for IEEE 802.11b Mode Operation EVM < 2.0% at 19 dBm Output Power for IEEE 802.11g Mode Operation On-chip Power Detector with 20 dB Dynamic Range Power-down Mode and Biasing Control Input and Interstage Matching Fully On-chip Low Profile Lead-free Plastic Package QFN16 (3 × 3 × 0.9 mm) Applications • • • • IEEE 802.11b DSSS WLAN IEEE 802.11g OFDM WLAN PC Cards, PCMCIA, Access Points 2.4 GHz ISM Band Application 1. Description This power amplifier (PA) is designed for high-performance 802.11b and 802.11g multi-mode applications such as Mini PCI and PCMCIA for portable devices and access points. The low profile plastic package with internal input matching to 50Ω and on-chip interstage matching minimizes the PCB board-space and allows simplified integration with very few passive components. The on-chip power detector provides a voltage linear to the output power, while the standby/bias control logic provides power-saving and shutdown options. The PA is realized as a three stage PA with internal interstage matching and an open-collector output structure. High Gain Power Amplifier for 802.11b/g WLAN Systems ATR7032 Preliminary The power amplifier is designed using Atmel’s Silicon-Germanium (SiGe2) process and provides excellent linearity and noise performance, high gain, and good poweradded efficiency. Rev. 4846B–WLAN–04/05 12 13 V_PA1 GND_RF RF_IN 11 NC NC V_PA2 Block Diagram IC Figure 1-1. 10 9 ATR7032 14 8 RF_OUT 15 50 Ω Input Interstage Matching Match 7 Interstage Matching RF_OUT 6 IC RF_OUT 16 5 RF_OUT Paddle Standby/ Bias Circuitry 2 3 GND_VCC 2 VCC VCTRL 1 Voltage Detector 4 VDET GND_RF ATR7032 [Preliminary] 4846B–WLAN–04/05 ATR7032 [Preliminary] 2. Pin Configuration Pinning QFN16 IC RF_IN GND V_PA1 Figure 2-1. 16 15 14 13 12 IC 1 11 V_PA2 2 ATR7032 10 NC 3 9 NC 4 5 6 7 8 RF_OUT RF_OUT RF_OUT RF_OUT VCTRL VCC GND_VCC VDET Table 2-1. Pin Description Pin Symbol Function 1 VCTRL 2 VCC 3 GND_VCC 4 VDET 5 RF_OUT RF output 6 RF_OUT RF output 7 RF_OUT RF output 8 RF_OUT RF output Power-up/biasing control voltage Supply voltage Ground Power detector voltage 9 NC Not connected 10 NC Not connected 11 V_PA2 12 IC 13 V_PA1 14 GND Ground 15 RF_IN RF input 16 IC Internally connected, on-chip matching; must not be externally connected Slug – Ground Supply voltage PA stage 2 Internally connected, on-chip matching; must not be externally connected Supply voltage PA stage 1 3 4846B–WLAN–04/05 3. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage Test Conditions VCC TBD V Supply current ICC 600 mA Junction temperature Tj 150 °C Storage temperature TStg –40 to +125 °C Input RF power PIN 12 dBm VCONTR 0 to +3.0 V 500 V Symbol Value Unit Supply voltage range VCC 2.7 to 3.6 V Ambient temperature range Tamb –40 to +85 °C f 2400 to 2500 MHz Control voltage power up/down and biasing ESD protection, all pins EIA/JESD22-A114-B VESD Note: 1. The part may not survive all maximums applied simultaneously. 4. Operating Range Parameters Frequency range 5. Electrical Characteristics Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C No. 1.0 1.1 1.2 1.3 Parameters Control voltage range Current consumption Test Conditions Pin Symbol Min. PA operating mode VCONTR 1 Power down mode VCONTR Quiescent ICQ Power down mode IPD Typ. Max. Unit Type* 2 V A 0.2 90 A mA A µA A 10 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 4 ATR7032 [Preliminary] 4846B–WLAN–04/05 ATR7032 [Preliminary] 6. Electrical Characteristics – Unmodulated Carrier Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C No. Parameters Test Conditions 2.0 Saturated output power For reference 2.1 P1dB output power 2.2 Harmonic rejection 2.3 Pin Symbol Min. Typ. Max. Unit Type* PSAT 28.5 dBm A P1dB 27 dBm A POUT = 23 dBm 2fout 3fout –45 –30 dBc dBc C C Small signal gain ICQ, small signal condition GL 32 dB A 2.4 Gain variation ICQ, small signal condition 2.4 to 2.5 GHz –40 to +85°C dB dB A C 2.5 Reverse isolation ICQ, small signal condition ISOr 40 dB C 2.6 Input 50Ω VSWR ICQ, small signal condition VSWRIN 2:1 C 2.7 Output 50Ω VSWR ICQ, small signal condition, with external matching VSWROUT 2:1 C Gvarfreq Gvartemp –1 –1.5 +1 +1.5 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 7. Electrical Characteristics – 11 Mbps CCK Modulation Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C, 11 Mbps CCK modulation with Gaussian transmit filtering of BT = 0.4, conforming to IEEE 802.11b No. Parameters Test Conditions Pin Symbol 3.0 Maximum linear output power ACPR1 ≥ 33 dBc, ACPR2 ≥ 55 dBc PLIN 3.1 Linear power gain POUT = PLIN, ACPR1 ≥ 33 dBc, ACPR2 ≥ 55 dBc 3.2 Current consumption POUT = PLIN, ACPR1 ≥ 33 dBc, ACPR2 ≥ 55 dBc Min. Typ. Max. Unit Type* 23 dBm A GL 32 dB A ICC 220 mA A *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 8. Electrical Characteristics – 54 Mbps OFDM Modulation Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C, 54 Mbps OFDM modulation, conforming to IEEE 802.11g; 0.7% EVM measurement equipment noise floor is included in the EVM measurement result. No. Parameters Test Conditions Pin Symbol 4.0 Error vector magnitude POUT = 19 dBm EVM 4.1 Linear power gain POUT = 19 dBm 4.2 Current consumption POUT = 19 dBm Min. Typ. Max. Unit Type* 2.0 % A GL 32 dB A ICC 150 mA A *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 5 4846B–WLAN–04/05 9. Power Detector Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C No. Parameters Test Conditions 5.0 Detector voltage range 5.1 5.2 Pin Symbol Min. POUT = 5 to 25 dBm VDET 0 Settling time POUT = 5 to 25 dBm tSET Detector accuracy POUT = 5 to 25 dBm VCC = 2.7 to 3.6V Tamb = –40 to +85°C ∆POUT Typ. Max. Unit Type* 2 V A 0.5 µs C ±0.7 dB C *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 10. Application Circuit Figure 10-1. Application Board Schematic V_PA2 V_PA3 C11(1) C17(1) C18(1) C12(1) L1 12 13 V_PA1 11 NC L2 NC IC C3 10 C4 L3 9 ATR7032 C16(1) C10(1) C2 14 8 GND_RF RF_IN 15 50 Ω Input C1 Interstage Matching Match 7 Interstage Matching T1 T2 6 IC C5 16 C7 PA_Out 5 GND_RF T1, T2: Microstrip Line Paddle Standby/ Bias Circuitry 1 2 Voltage Detector 3 4 Microstrip Line Length/mm Width/mm T1 4.3 0.64 T2 5.6 0.64 Metal layer distance to ground: 360 µm CU metal layer thickness: 35 µm 4.5 εr of dielectric material (FR4): C8 (1) Components can be omitted depending on application C9(1) VCTRL 6 C19 VCC R1(1) IC: internally connected; pin must not be connected to any other pin or supply chain VDET ATR7032 [Preliminary] 4846B–WLAN–04/05 ATR7032 [Preliminary] Figure 10-2. Application Board Layout Table 10-1. Bill of Materials for Application Board Component Reference Value Size Capacitor C1 4p7 0603 Capacitor C2 56p 0603 Capacitor C3 56p 0603 Capacitor C4 56p 0603 Capacitor C5 1p8 0603 Capacitor C7 4p7 0603 Capacitor C8 4p7 0603 Capacitor C9 4p7 0603 Capacitor C10(1) 10n 0603 Capacitor 10n 0603 10n 0603 1µ 0603 1µ 0603 1µ 0603 Capacitor C11(1) C12(1) C16(1) C17(1) C18(1) C19(1) 1µ 0603 Resistor R1 22k 0603 Inductor L1 15n 0603 Inductor L2 15n 0603 15n Inductor L3 1. Components can be omitted depending on application 0603 Capacitor Capacitor Capacitor Capacitor Note: 7 4846B–WLAN–04/05 10.1 Evaluation Board Set-up Instructions After connection of all cables (RF and DC): • VCC, VV_PA1, VV_PA2, VRF_Out = 3.3V • Increase VCTRL until 90 mA quiscent current without RF signal is reached (~ 1.05V) • Incease input power until desired linear output power is reached 11. Typical Operating Characteristics Figure 11-1. Typical Gain and Current versus Control Voltage: Frequency = 2450 MHz; PIn = –40 dBm; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 40 350 Gain 30 300 20 250 10 200 IV_PA3 0 150 -10 I (mA) Gain (dB) Itot 100 IV_PA2 -20 50 IV_PA1 + IVCC -30 0.6 0.8 1 1.2 1.4 1.6 1.8 0 2 VCTRL (V) Figure 11-2. Typical Operating Point for 54 Mbps OFDM Modulation: Frequency = 2450 MHz; POut = 19 dBm; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 3.5 180 3 170 Itot I 160 EVM 2 150 1.5 140 1 I (mA) EVM (%) 2.5 130 Operating Point 0.5 120 0 110 0.9 0.95 1 1.05 1.1 1.15 1.2 VCTRL (V) 8 ATR7032 [Preliminary] 4846B–WLAN–04/05 ATR7032 [Preliminary] Figure 11-3. Typical S-Parameter at Operating Point: VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 10 S22 30 20 S21 (dB) 0 S11 10 -10 -20 S21 0 -30 -10 -40 S12 -20 -50 -30 S12, S11 and S22 (dB) 40 -60 -40 -70 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 f (GHz) Figure 11-4. Typical S-Parameter at Operating Point (Detail): VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 40 10 S21 0 20 S11 -10 10 S22 -20 0 -30 -10 -40 S12 -20 -50 -30 -60 -40 2.40 2.43 2.45 2.48 S12, S11 and S22 (dB) S21 (dB) 30 -70 2.50 f (GHz) 9 4846B–WLAN–04/05 Figure 11-5. Typical Power-sweep with Unmodulated Carrier at Operating Point: Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 50 500 Itot 45 450 Gain (dB) and PAE (%) PAE 40 400 35 350 30 300 25 250 20 I (mA) Gain 200 IV_PA3 15 150 IV_PA2 10 100 IV_PA1 + IVCC 5 50 0 0 3 5 7 9 11 13 15 17 19 21 23 25 27 29 POut (dBm) Figure 11-6. Typical Power-sweep with Unmodulated Carrier at Operating Point (Temperature Behaviour): Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 40 550 500 Gain (-40°C) 36 450 Gain (+25°C) 34 400 Gain (+85°C) 32 350 30 300 28 250 Itot (+85°C) Itot (+25°C) 26 200 Itot (-40°C) 24 I (mA) Gain (dB) and PAE (%) 38 150 22 100 20 50 3 5 7 9 11 13 15 17 19 21 23 25 27 29 Pout (dBm) 10 ATR7032 [Preliminary] 4846B–WLAN–04/05 ATR7032 [Preliminary] Figure 11-7. Typical Spectral Plot Conforming Compliance to 802.11b Spectral Mask for 11 Mbps CCK Modulation at Operating Point: POut = 23 dBm; Frequency = 2450 MHz; VCTRL = 1.05V; ICC = 220 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V Ref 21.1 dBm 20 Offset * At t 0 dB 20.8 dB CH PWR 22.79 dBm LIMIT CHECK MARG A LINE ACPRBU_G MARG 10 1 RM * AVG * RBW 100 kHz * VBW 100 kHz * SWT 20 ms TRG LVL 0 -10 -20 33 dBc EXT -30 -40 55 dBc -50 -60 -70 Center 2.45 GHz Span 100 MHz 10 MHz/ 4.0 180 3.5 170 3.0 160 2.5 150 Itot 2.0 1.5 140 I (mA) EVM (%) Figure 11-8. Typical Power-sweep with 54 Mbps OFDM Modulation at Operating Point: Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 130 EVM 1.0 120 0.5 110 0.0 100 15 16 17 18 19 20 21 POut (dBm) 11 4846B–WLAN–04/05 Figure 11-9. Typical Spectral Plot Conforming Compliance to 802.11g Spectral Mask for 54 Mbps OFDM Modulation at Operating Point: POut = 23 dBm; Frequency = 2450 MHz; VCTRL = 1.05V; ICC = 150 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V Ref 10 1 RM * AVG 13.1 dBm Offset * RBW 100 kHz * VBW 100 kHz * SWT 20 ms * At t 5 dB CH PWR 18.98 dBm 20.8 dB A 0 GAT -10 TRG LVL -20 -30 EXT -40 -50 -60 -70 -80 Center 2.45 GHz Span 100 MHz 10 MHz/ Figure 11-10. Typical Detector Voltage versus POut for Unmodulated Carrier (Temperature and VCC parameterized): Frequency = 2450 MHz; VCTRL = 1.05 V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 2.7V, 3.3V, 3.6V; Tamb = –40°C, 25°C, 85°C 3.0 Voltage (V) 2.5 2.0 1.5 VDET 1.0 0.5 0.0 -5 -1 3 7 11 15 19 23 27 POut (dBm) 12 ATR7032 [Preliminary] 4846B–WLAN–04/05 ATR7032 [Preliminary] Figure 11-11. Power Detector Response (Rising Edge): POut = 23 dBm; Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V Figure 11-12. Power Detector Response (Falling Edge): POut = 23 dBm; Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 13 4846B–WLAN–04/05 12. Ordering Information Extended Type Number Package Remarks MOQ ATR7032-PVPW QFN16, 3 × 3 Taped and 80 mm reeled, RoHs compliant 6000 pcs. ATR7032-PVQW QFN16, 3 × 3 Taped and 330 mm reeled, RoHs compliant 1500 pcs. ATR7032-DEV-BOARD – Evaluation board 1 13. Package Information Package: QFN 16 - 3x3 Exposed pad 1.7x1.7 (acc. JEDEC OUTLINE No. MO-220) Dimensions in mm Not indicated tolerances ±0.05 3 0.9±0.1 1.7 +0 0.05 -0.05 68 2. 1 9 4 8 5 15 16 12 0.25 4 13 technical drawings according to DIN specifications 0. 0.4±0.1 16 1 0.5 nom. Drawing-No.: 6.543-5115.01-4 Issue: 1; 07.03.05 1.5 Assembly Chip PAC 14 ATR7032 [Preliminary] 4846B–WLAN–04/05 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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